• Title/Summary/Keyword: Crack Tip Profile

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Finite Element Analysis of Creep Crack Growth Behavior Including Primary Creep Rate (1차 크리프 속도를 고려한 크리프 균열 진전의 유한요소 해석)

  • Choi, Hyeon-Chang
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.23 no.7 s.166
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    • pp.1120-1128
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    • 1999
  • An elastic-viscoplastic finite element analysis is performed to investigate detailed growth behavior of creep cracks and the numerical results are compared with experimental results. In Cr-Mo steel stress fields obtained from the crack growth method by mesh translation were compared with both cases that the secondary creep rate is only used as creep material property and the primary creep rate is included. Analytical stress fields, Riedel-Rice(RR) field, Hart-Hui-Riedel(HR) field and Prime(named in here) field, and the results obtained by numerical method were evaluated in details. Time vs. stress at crack tip was showed and crack tip stress fields were plotted. These results were compared with analytical stress fields. There is no difference of stress distribution at remote region between the case of 1st creep rate+2nd creep rate and the case of 2nd creep rate only. In case of slow velocity of crack growth, the effect of 1st creep rate is larger than the one of fast crack growth rate. Stress fields at crack tip region we, in order, Prime field, HR field and RR field from crack tip.

Development of crack analysis technique by using extended finite element method free from mesh-dependency (확장유한요소법을 통한 요소망제약조건이 없는 균열해석기법 개발)

  • 이상호;송정훈
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2002.10a
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    • pp.112-119
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    • 2002
  • In this paper, an Extended Finite Element Method is proposed by adding discontinuity and singularity enrichment functions to the standard FEM approximation. In this method, the singularity and the discontinuity of the crack are efficiently modeled by using initial regular mesh without refining mesh near the crack tip, so that it enables express the asymptotic stress field near crack tip and crack surface successfully. The developed method was verified by evaluating crack tip stress profile and stress intensity factor of mode Ⅰ/mode Ⅱ fracture problems and the results showed the effectiveness and robustness for fracture problem.

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The Effect of Fiber Stacking Angle on the Relationship Between Fatigue Crack and Delamination Behavior in a Hybrid Composite Materials (하이브리드 복합재료의 섬유배향각이 피로균열 및 층간분리 거동의 관계에 미치는 영향)

  • Song, Sam-Hong;Kim, Cheol-Woong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.3
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    • pp.281-288
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    • 2004
  • The hybrid composite material (Al/GFRP laminates) are applied to the fuselage and wing in a aircraft. Therefore, Al/GFRP laminates suffer from the cyclic bending moments. This study was to evaluate the effect of fiber stacking angle on the fatigue crack propagation and delamination behavior using the relationship between crack growth rate (da/dN) and stress intensity factor range (ΔK) in Al/GFRP laminates under cyclic bending moment. The variable delamination growth behavior in case of three different type of fiber orientations, i.e., [Al/O$_2$/Al], [Al/+45$_2$/Al] and [Al/90$_2$/Al] at the interface of Al layer and glass fiber layer was measured by ultrasonic C-scan images. As results of this study, It represent that the delamination shape should turns out to have more effective characteristics on the fiber stacking angle. The extension of the delamination zone in case of [Al/+45$_2$/Al] and [Al/90$_2$/Al] were not formed along the fatigue crack profile. The shape of delamination zone depend on fiber stacking angle and the variable type with the delamination contour decreased non-linearly toward the crack tip at the Al layer.

The Analysis of Fatigue Behavior Using the Delamination Growth Rate(dAD/da) and Fiber Bridging Effect Factor(FBE) in Al/GERP Laminates (층간분리성장률(dAD/da)과 섬유가교효과인자(FBE)를 이용한 Al/GFRP 적층재의 피로거동 해석)

  • Song, Sam-Hong;Kim, Cheol-Woong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.2
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    • pp.317-326
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    • 2003
  • The influence of cyclic bending moment on the delamination and the fatigue crack propagation behavior in Al/GFRP laminate such as the wing section was investigated. The main objective of this study was to evaluate the relationship between crack profile and delamination behavior. And a propose parameter on the delamination growth rate(d $A_{D}$/da) of Al/GFRP laminates with a saw-cut using relationship between delamination area( $A_{D}$) and cycles(N), crack length(a), stress intensity factor range($\Delta$K). Also, the fiber bridging effect factor( $F_{BE}$ ) was propose that the fiber bridging modification factor($\beta$$_{fb}$ ) to evaluate using the delamination growth rate(d $A_{D}$/da). The shape and size of the delamination zone formed along the fatigue crack between aluminum alloy sheet. Class fiber-adhesive layer were measured by an ultrasonic C-scan image. The shape of delamination zone turns out to be semi-elliptic with the contour decreased non-linearly toward the crack tip. It represents that relationship between crack length and delamination growth rate(d $A_{D}$/da) were interdependent by reciprocal action, therefore it's applicable present a model for the delamination growth rate(dA/sib D//da) in Al/GFRP laminates.minates.s.

입계기공의 확산성장 모델을 이용한 고온 기기의 크립균열전파해석(3)

  • Jeon, Jae-Young
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.4
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    • pp.1194-1201
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    • 1996
  • For the case of creep-fatigue interaction, the damage zone developed in front of the growing crack-tip during creep regime is important because it can affect the damage mechanism to be occured by the following fatigue load. These are studied in theis paper through proper consideration of the cavitiy-size dependent sintering stress which is approximated by polynomials. It is shown that the inclination of reversed damage zone size with respect to the applied load parameter can be explained by considering realistic sintering stress distribution. However, the resultant stress field has $r^{1/2+\theta}$ singularity, regardliss of the profile of variable sintering stress, which is the same to that case solved for constant sintering stress.

$TiO_2$ Thin Film Patterning on Modified Silicon Surfaces by MOCVD and Microcontact Printing Method

  • 강병창;이종현;정덕영;이순보;부진효
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.77-77
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    • 2000
  • Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

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