• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.4.2-4.2
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.191-192
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• 2003

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.277-280
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• 2007

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.303-304
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• 2002

32"-diagonal gated carbon nanotube(CNT) cathodes named under-gate cathodes for large-size display applications have been fabricated and characterized. The emission uniformity looks fine, even without the resistive layer. The emission performance has been improved by scaling down the cathode electrode dimension.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.640-643
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• 2007

The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.851-854
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• 2004

By approaching the counter electrode to the CNT emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 ms/$cm^2$, which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 ${\mu}m$. The gate current was less than 10 % of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1097-1100
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• 2008

We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.7-10
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• 2003

Samsung SDI has developed a full color 5.0" WVGA AMOLED display with top emission and a super fine pitch of 0.1365mm(l86ppi), the world's highest resolution OLED display ever reported to date. Scan driver circuits and demux circuit were integrated into the display panel, using low temperature poly-Si TFT CMOS technology, and data driver circuit were mounted using COG chips. Peak luminescence was greater than 300cd/ $m^2$ with power consumption of 500mW with 30% of the pixels on illuminated.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1008-1011
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• 2005

In this study, the field emission display with carbon nanotube emitter is developed for the large size HDTV application. Two structures for electron beam focusing are developed on the typical top-gate cathode. The metal grid and focusing gate structure are proved to be effective for the focusing. The data switching voltage for the double gate structure is lower than 30V which is competitive value in respect of the cost for driver electronics. The brightness and color gamut are comparable to those of the commercial product such as CRT.