• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.71-76
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• 2022

We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.