• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Korean Journal of Microbiology
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• v.44 no.3
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• pp.169-177
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• 2008

Global gene expression of Deinococcus radiodurans, a highly radiation resistant bacterium, in response to excess copper was analyzed by using oligonucleotide microarray chip. Among 3,187 open reading frames of D. radiodurans, seventy genes showed a statistically significant expression ratio of at least 2-fold changes under growth conditions of excess copper; 64 genes were induced and 6 genes were reduced. Especially, two operons ($DRB0014{\sim}DRB0017$ and $DRB0125{\sim}DRB0121$) presumably involved in the iron transport and utilization were the most highly induced genes by excess copper. A quantitative real-time PCR assay revealed that DRB00l4 and DRB0125 are highly transcribed responding to excess copper and 2,2'-dipyridyl, an iron chelator. In addition, the transcription of both genes was not changed by excess iron and bathocuproine disulphonate, a copper chelator. These results suggested that the copper metabolism may be closely connected with the iron transport and utilization in D. radiodurans. However, the disruption of each gene, DRB00l4 and DRB0125, did not affect the copper and radiation resistance, the most well-known character of this organism.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.98-102
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• 2005

This article describes a study of chemical vapor deposition (CVD) of copper thin films on TiN substrates using (HFAC)Cu(DMB) as a precursor. The surface morphology and conformality of the Cu films as functions of substrate temperature and the presence or absence of iodine have been investigated. The surface roughness was increased significantly along with decrement of the step coverage by increasing the deposition temperature. The highest conformal films with the lowest surface roughness were obtained using the process of copper CVD, where iodine vapor were discretely introduced into the reactor during the growth of copper.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.182-182
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• 2006

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.45-49
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• 2006

The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity.

• Korean Journal of Microbiology
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• v.10 no.1
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• pp.1-8
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• 1972

This experiment was carried out to investigate the physiological characteristics of isolated bacteria, Ferrobacillus ferooxidans from copper mine water in Korea. The results obtained were as follows ; 1. The optimum pH range for the growth of these bacteria was 2.0-3.0 and optimum temperature was $20^{\circ}C$-$30^{\circ}C$. 2. The oxidation curves of ferrous iron to the ferric iron ran parallel with the growth curves. 3. The optimum nitrogen concentration was 400-800 ppm and the minimal flow rate of air for the maximal growth of the bactria was 70 ml air/min./200ml medium. 4. The growth of these bacteria was inhibited by the absence of ferrous iron and by the addition of sulfur. 5. Ferrous iron at a concentration of 9000 ppm, appeared to be optimum for the most rapid growth of Ferrobacillus ferrooxidans.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.224-228
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• 2014

Recently, the demands for separation/recovery of valuable metals such as nickel or tin from copper based alloys has been attracting much attention from the viewpoints of environmental protection and resource utilization. In this report, experimental results on concentration increasement of nickel and tin compared to the previous report are investigated. Ni is successfully separated by a organic solvent and reduced to the metal powder whose concentration is over 98 %. Sn is separated by a selective solution method and its concentration is increased to 97.5 % by three consecutive solution and reduction process. Crystal structure, surface morphology and microstructure of the separated samples are studied.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.5
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• pp.1083-1091
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• 1988

Vacuum brazing is the most modern brazing process and is at present, far from being completely understood. By brazing under high vacuum, in an atmosphere free of oxidizing gases, a superior product with greater strength, ductility and uniformity can be obtained. In this study, the influence of brazing parameters such as base metal characteristics, joint clearance and brazing time were described in relation to the metallurgical phenomena and shear strength of vacuum-brazed joints between carbon steels and 304 stainless steel (SUS 304) brazed by copper filler metal. In copper brazing of SUS 304 to a medium carbon steel(M.C.S) the columnar Fe-Cr-Ni-Cu-C alloy structure was formed and grew from the M.C.S side and at the same time, the surface of M.C.S. was decarbonized. The driving force for the formation and growth of columnar structure was the difference of carbon content between base metals. As the joint clearance is narrower and brazing time is longer, the formation and growth of columnar phase and decarburization of carbon steels were more noticeable. Because of decarburization of carbon steels, the shear strength of brazed joints were reduced as the formation of columnar structure was increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.79-93
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• 1991

With the advent of ULSI, many problems in previous metallization techniques and interconnection materials have become more serious. In this work, selective deposition of copper to fill the submicron contact has been tried. After forming electro-deposited copper films on p-type (100) silicon wafer using 0.75M $CuSO_4{\cdot}$5H_2O$ as an electrolyte, the effect of deposition time, current density and concentration of an additive on film properties were investigated. Film thickness, particle size and resistivity were analyzed by Alpha Step, SEM and 4 - point probe measurement respectively. The deposition rate was about $0.5-0.6\mu\textrm{m}$/min at $2A/dm^2$ and the particle size increased with increasing current density. The resistivities of electro-deposited copper films were about $3-6{\mu}{\Omega}{\cdot}$cm for the particle size above $4000{\AA}$. By the addition of 0.2 g/l gelatin, the particle size was reduced to less than $0.1{\mu}m $ and selective plugging of copper on submicron contacts could be successfully achieved.