• 접착 및 계면
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• 제4권3호
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• pp.1-8
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• 2003

철판에 도금한 아연을 구리이온으로 치환하는 치환도금법과 철판에 직접 구리를 증착하는 진공증착법으로 두께가 다른 구리박막 피복철판을 제조하여 배합고무와 접착성질을 조사하였다. 구리박막 피복철판과 배합고무의 접착세기는 제조방법에 관계없이 구리박막 두께에 따라 결정되었다. 구리박막이 75 nm보다 얇으면 안정한 접착층이 형성되어 황동판에 못지 않게 고무와 강하게 접착되었으나, 90 nm보다 두터우면 구리황화물이 지나치게 성정하여 접착세기가 약하였다.

• 공업화학
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• 제2권3호
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• pp.193-198
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• 1991

후막 구리도체는 귀금속계 도체에 비하여 가격이 저렴하고 전기전도도, 납땜성, 땜납 침식저항, 와이어 본딩성등의 양호한 성질 때문에 매우 중요성을 갖는다. 그러나 우수한 후막 구리도체를 형성하는 것은 구리가 높은 온도에서 쉽게 산화하는 성질로 인해 상당히 복잡하다. 양호한 구리후막을 얻기 위하여 하이브리드 마이크로회로업계는 질소분위기, 반응성분위기 또는 공기분위기를 사용한다. 이 글에서는 후막 구리도체의 소성공정과 세종류의 소성분위기에 대하여 종합적으로 고찰하였다.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 한국염색가공학회지
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• 제16권5호
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• pp.42-47
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• 2004

The main objective of this work is to develop melt-blown nonwoven fabric composite materials have electromagnetic shielding characteristics using thin copper film. Melt-blown nonwoven fabric is the matrix phase and thin copper films are the reinforcement of the composite materials. Thin copper films are incorporated as conductive fillers to provide the electromagnetic shielding property of the melt-blown nonwoven fabric. The width and interval of thin copper films in the nonwoven fabric are varied by changing 1, 3, 5 mm for thin copper film's width and 1, 3, 5 mm for thin copper film's interval. The shielding effectiveness(SE) of various melt-blown nonwoven fabrics is measured in the frequency range of 50 MHz to 1.8 GHz. The variations of SE of melt-blown nonwoven fabric with width and interval of thin copper films are described. Suitability of melt-blown nonwoven fabric for electromagnetic shielding applications is discussed. The results indicate that the melt-blown nonwoven fabric composite material using thin copper film can be used for the purpose of electromagnetic shielding.

• 공업화학
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• 제2권3호
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• pp.289-299
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• 1991

후막 구리도체에 적합한 유리를 얻기 위하여 연붕규산계 및 무연 붕규산계 유리를 기반으로 하는 9종의 유리를 제조하고 후막 구리도체에의 적합성을 시험하였다. 그 결과 모든 유리들이 후막 구리도체의 쉬트 저항치, 납땜성 및 땜납 침식저항에는 양호하게 기여하는 것을 확인하였다. 그러나 후막과 알루미나 기판간의 노화후의 부착강도는 연붕규산계 유리로 만들어진 구리 도체막 만이 유용한 값을 가졌고, 그 외의 유리로 만들어진 구리 도체막의 노화후 부착강도는 사용하기에 부적합할 정도로 낮은 것이었다. 특히 $Cu_2O$ 가 첨가된 연붕규산계 유리가 후막 구리도체 제조에 가장 양호한 것으로 확인되었다.

• 한국재료학회지
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• 제15권7호
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• pp.465-472
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• 2005

Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

• Corrosion Science and Technology
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• 제6권4호
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• pp.154-158
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• 2007

For the application of flexible printed circuit board (FPCB), electroplated copper is required to have low surface roughness and residual stress. In the paper, the effects of surface roughness and residual stress of electroplated copper as thick as $8{\mu}m$ were studied on organic additives such as inhibitor, leveler and accelerator. Polyimide film coated with sputtered copper was used as a substrate. Surface roughness and surface morphology were measured by 3D-laser surface analysis and FESEM, respectively. Residual stress was calculated by Stoney's equation after measuring radius curvature of specimen. The addition of additives except high concentration of accelerator in the electrolyte decreased surface roughness of electroplated copper film. Such a tendency was explained by the function of additives among which the inhibitor and the leveler inhibit electroplating on a whole surface and prolusions, respectively. The accelerator plays a role in accelerating the electroplating in valley parts. The inhibitors and the leveler increased residual stress, whereas the accelerator decreased it. It was thought to be related with entrapped additives on electroplated copper film rather than the preferred orientation of electroplated copper film. The reason why additives lead to residual stress remains for the future work.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1640-1644
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• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• 한국항공우주학회지
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• 제49권10호
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• pp.841-847
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• 2021

본 논문에서는 저밀도 표면필름 구리망에 대한 비행체 적용 가능성을 분석하였다. 최근 기존 표면 필름 구리망에서 중량 및 비용을 절감할 수 있도록 표면 필름의 두께를 낮춘 저밀도 표면 필름 구리망이 개발되었다. 이러한 저밀도 표면필름 구리망을 비행체에 적용하기 위해서는 샌드위치 구조에서의 핀 홀 방지 효과와 같은 제작성 확인과 함께 적용 시 전자기 영향성에 대한 분석이 필요하다. 따라서 본 연구에서는 저밀도 필름 구리망 2종과 기존 비행체 적용 구리망 1종에 대해 제작성 및 전자기 영향성을 분석하였다. 표면 구리망에 대한 제작성은 샌드위치 복합재와 표면 구리망을 결합하여 핀 홀 방지효과를 확인하였다. 전자기 영향성 분석은 3D 전자기파 시뮬레이션을 통해 각 샘플에 대한 주기구조를 이용하여 해석하였으며, 자유공간 측정방법을 이용한 저밀도 필름 구리망의 전자기파 투과특성 측정결과를 통해 시뮬레이션 결과가 유효함을 확인하였다. 위 결과로 비행체 적용이 필요한 저밀도 표면필름 구리망에 대한 해석 및 비행체 적용 가능성을 판단할 수 있다.

• 한국재료학회지
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• 제15권6호
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.