• Transactions of the Korean hydrogen and new energy society
• /
• v.3 no.2
• /
• pp.45-54
• /
• 1992

An applicability microencapsulation, using electroless copper plating, of hydrogen storage alloy powder as an anode material for nickel-hydrogen secondary batteries was investigated. Alloys employed were $LaNi_{4.7}Al_{0.3}$ and $MmNi_{4.5}Al_{0.5}$(Mm=mischmetal) which have an appropriate equilibrium pressure and capacity. The microencapsulation of the alloy powder was found to accelerate initial activation of electrodes and to increase capacity which is about 285mAh/g for $LaNi_{4.7}Al_{0.3}$. In addition, other charge and discharge characteristics, such as polarization and flatness of charge and discharge potential, were improved due to the role of copper layer as a microcurrent collector and an oxidation barrier of the alloy powder. $MmNi_{4.5}Al_{0.5}$ alloy showed lower capacity than $LaNi_{4.7}Al_{0.3}$ because of higher equilibrium pressure. Cyclic characteristics of both alloys were somewhat poor because of mainly shedding and partial oxidation of alloy powder during the cycling. However, it was considered that the microencapsulation method is effective to improve the performances of the hydrogen storage alloy electrodes.

• Progress in Superconductivity and Cryogenics
• /
• v.20 no.4
• /
• pp.26-30
• /
• 2018

The turn-to-turn contact resistance of 2G high temperature superconducting (HTS) coils with metal insulation (MI) is closely related to the stability of the coils, current charging rate and delay time [1]. MI coils were fabricated using five kinds of metal tapes such as aluminum (Al) tape, brass tape, stainless steel (SS) tape, copper (Cu)-plated tape and one-sided Cu-plated SS tape. The turn-to-turn contact surface resistances of co-winding model coils using Al tape, brass tape, and SS tape were 342.6, 343.6 and $724.8{\mu}{\Omega}{\cdot}cm^2$, respectively. The turn-to-turn contact resistance of the model coil using the one-sided Cu-plated SS tape was $ 248.8{\mu}{\Omega}{\cdot}cm^2$, which was lower than that of Al and brass tape. Al or brass tape can be used to reduce contact resistance and improve the stability of the coil. Considering strength, SS tape is recommended. For strength and low contact resistance, SS tape with copper plating on one side can be used.

• Progress in Superconductivity and Cryogenics
• /
• v.25 no.4
• /
• pp.24-27
• /
• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.2 s.35
• /
• pp.129-134
• /
• 2005

Electroplating copper is the important role in formation of 3D stacking interconnection in SiP (System in Package). The I-V characteristics curves are investigated at different electrolyte conditions. Inhibitor and accelerator are used simultaneously to investigate the effects of additives. Three different sizes of via are tested. All via were prepared with RIE (reactive ion etching) method. Via's diameter are 50, 75, $100{\mu}m$ and the height is $100{\mu}m$. Inside via, Ta was deposited for diffusion barrier and Cu was deposited fer seed layer using magnetron sputtering method. DC, pulse and pulse revere current are used in this study. With DC, via cannot be filled without defects. Pulse plating can improve the filling patterns however it cannot completely filled copper without defects. Via was filled completely without defects using pulse-reverse electroplating method.

• Korean Chemical Engineering Research
• /
• v.43 no.4
• /
• pp.495-502
• /
• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.13-16
• /
• 2013

A lot of various researches have been going on to use heat spreader for LED module. Nano porous aluminum anodic oxide (AAO) applied LED, which is produced from anodization, is easy and economically advantageous. Convensional LED module is consist of aluminum/adhesive/copper circuit. The polymer adhesive in this module is used as heat spreader. However the thermal emission of LED component is degraded because of low heat conductivity of polymer and also reliability of LED component is reduced. Therefore, AAO in this work was applied to heat spreader of LED module which has higher heat conductivity compare to polymer. Bonding strength between AAO and copper circuit was improved with Ti/Cu seed layer by copper sputtering process (DBC) before the bonding. And this copper circuit has been fabricated by electro plating method. Peel strength of AAO and copper circuit in this work showed range between 1.18~1.45 kgf/cm with anodizing process which is very suitable for high power LED application.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.3
• /
• pp.51-56
• /
• 2016

To fabricate a copper (Cu)-based fine conductive filler having antioxidation property, submicron silver (Ag)-coated Cu particles were fabricated and their antioxidation property was evaluated. After synthesizing the Cu particles of $0.705{\mu}m$ in average diameter by a wet-reduction process, Ag-coated Cu particles were fabricated by successive Ag plating using ethylene grycol solvent. Main process parameters in the Ag plating were the concentration of reductant (ascorbic acid), the injection rate of Ag precursor solution, and the stirring rate in mixed solution. Thus, Ag plating characteristics and the formation of separate fine pure Ag phase were observed with different combinations of process parameters. As a result, formation of the separate pure Ag phase and aggregation between Ag-coated Cu particles could be suppressed by optimization of the process parameters. The Ag-coated Cu particles which were fabricated using optimal conditions showed slight aggregation, but excellent antioxidation property. For example, the particles indicated the weight gain not exceeding 0.1% until $225^{\circ}C$ when they were heated in air at the rate of $10^{\circ}C/min$ and no weight gain until 75 min when they were heated in air at $150^{\circ}C$.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.13 no.5
• /
• pp.64-69
• /
• 2014

This article presents machining experiments to assess the relationship between the profile accuracy and the workpiece hardness using a natural diamond tool on an ultra-precision diamond turning machine. The study is intended to secure a corner cube prism pattern for reflective film capable of high-quality outcomes. The optical performance levels and edge images of corner cubes having various hardness levels of the copper-coated layer on a carbon steel plate are analyzed. The hardness of the workpiece has a considerable effect on the profile accuracy. The higher the hardness of the workpiece, the better the profile accuracy and the worse the edge wear of the diamond tool.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.07a
• /
• pp.95-99
• /
• 2001

Cu is considered as a promising alternative interconnection material to Al-based interconnection materials in Si-based integrated circuits due to its low resistivity and superior resistance to the electromigration. New humping and UBM material systems for solder flip chip interconnection of Cu pads were investigated using electroless-plated copper (E-Cu) and electroless-plated nickel (E-Ni) plating methods as low cost alternatives. Optimally designed E-Ni/E-Cu UBM bilayer material system can be used not only as UBMs for solder bumps but also as bump itself. Electroless-plated E-Ni/E-Cu bumps assembled using anisotropic conductive adhesives on an organic substrate is successfully demonstrated and characterized in this study

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.12
• /
• pp.1352-1355
• /
• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.