• Corrosion Science and Technology
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• 제6권4호
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• pp.198-205
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• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• 대한화학회지
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• 제40권5호
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• pp.341-346
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• 1996

$(Cin)Cu(NO_3)_2$으로 변성된 턴소반죽전극을 제작하여 $I^-$이온을 벗김전압전류법을 이용하여 정량하였다. $I^-$이온은 변성제인 $(Cin)Cu(NO_3)_2$착물에 배위된 $NO_3^-$와 이온교환에 의해 변전극에 감응하며, 산화전위는 +0.72 V였다, $I^-$ 이온의 최적분석 조건은 다음과 같다: 농축용액의 조성은 0.1 M $KNO_3$, 농축시간은 10분, 탄소분말에 대한 변성제의 함량은 40%(w/w). 선형주사 양극벗김전압전류법(Linear Sweep Anodic Stripping Voltammetry)에 의한 $I^-$이온의 검출한계는 $1.0{\times}10^{-6}M$이며, $2.0{\times}10^{-5}M$에서 구한 상대표준편차는 ${\pm}5.5%$였다. 여러 음이온에 대하여 방해작용을 검토한 결과 $Cl^-,\;Br^-,\;C_2O_4^{2-},\;ClO_4^-$ 등은 $I^-$이온의 정량에 영향을 주지 않았지만, $SCN^-$ 이온은 $I^-$ 이온의 산화전류를 약 32% 감소시켰다.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2679-2682
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• 2012

A simple one-pot synthesis of two derivatives of 1,4-dihydropyridines has been described under reflux conditions using copper iodide nanoparticles (CuI NPs) as a catalyst in high yields. This method demonstrated four-component coupling reactions of aldehydes and ammonium acetate via two pathways. In one route, the reaction was performed using 2 eq ethyl acetoacetate while in the other one 1 eq ethyl acetoacetate and 1 eq malononitrile were used. The CuI NPs was reused and recycled without any loss of activity and product yield. It is noteworthy to state that wide range of the 1,4-dihydropyridines have attracted large interest due to pharmacological and biological activities.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.492-495
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• 2008

Efficient top-emitting organic light-emitting diodes were fabricated using copper iodide (CuI) doped NPB as a p-doped hole injection layer to improve hole injection from a silver bottom electrode. The enhanced hole injection is originated from the formation of the charge transfer complex between CuI and NPB. The devices result in high efficiency of 69 cd/A with almost Lambertian emission pattern.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.961-964
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• 2009

• Bulletin of the Korean Chemical Society
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• 제25권7호
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• pp.1085-1087
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• 2004

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 방사성폐기물학회지
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• 제13권3호
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• pp.235-242
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• 2015

본 연구에서는 파이로프로세싱에서 발생하는 배기체 내 요오드 포집을 위한 매질로서 고가의 은 기반 흡착제를 대체하기 위한 상용 구리메쉬의 가능성에 대해 연구하였다. 열역학적 계산을 통해 구리 금속과 요오드 기체의 반응은 100 ~ 500℃ 온도 범위에서 자발적으로 일어나며 요오드화구리(CuI)를 형성할 것으로 예상되었다. 실험을 통해 반응 온도에 따른 요오드 포집 효율의 영향을 분석한 결과, 1개의 구리메쉬(질량 0.26 g)를 이용하여 반응 온도를 300, 400℃로 변화하였을 때 각각 5 및 6 wt%의 요오드(초기질량 2.0 g)가 포집됨을 확인하였다. 또한, 반복 실험 결과를 토대로 구리메쉬 표면에 형성된 반응 생성물(CuI)의 자발적인 탈리 현상으로 구리의 활용률이 증가할 수 있음을 확인하였다. 반응 생성물의 CuI 상 형성은 X-선 회절 실험을 통해 확인하였으며, 표면 분석은 주사전자현미경을 이용하여 수행하여 그 결과를 보고하였다.

• 대한화학회지
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• 제57권2호
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• pp.169-171
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• 2013

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.499-502
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• 2008