• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.22-26
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• 2014

$(Ba_{0.85}Ca_{0.15})(Ti_{0.9}Zr_{0.1})O_3$ + 0.04 wt% $CeO_2$ lead-free ceramics were prepared by conventional oxide-mixed method and the effect of sintering temperature on microstructure, dielectric and piezoelectric properties were investigated. Improved piezoelectric properties have been observed at $1,400^{\circ}C$ sintering temperature which show the optimal electrical properties, $k_p{\sim}0.412$, $d_{33}{\sim}316pC/N$, $Q_m{\sim}144$, ${\varepsilon}_r{\sim}3,345$ and $T_c{\sim}85^{\circ}C$. These results show that the sintering temperature plays an important role in piezoelectric properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1250-1251
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• 2008

In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.430-433
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• 2001

The $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1300^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_{3}$ and ilmenite $MgTiO_{3}$ structures were coexisted in the $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics. The dielectric constant$(\varepsilon_{r})$ was increased with addition of Ce. The temperature coefficient of resonant frequency$(\Gamma_{f})$ was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the $0.96MgTiO_{3}-0.04SrTiO_{3}+0.2Ce$ ceramics was near zero, where the dielectric constant, quality factor, and $\Gamma_{f}$ were 20.68, 50,272 and ${-0.5ppm/^{\circ}C}$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of $(Sr_{1-x}\cdot Ca_x)TiO_3(0.05{\leq}x{\leq}0.20)$-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1480\sim1500^{\circ}C$ and 4 hours. respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, ${\varepsilon}_r$ >50000, tan$\delta$ <0.05, ${\Delta}C$ < ${\pm}10%.$ The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.88-92
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• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.232-240
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• 1999

In this study, the $(1-\chi)Ba(Mg_{\fraction one-third}Ta_{\fraction two-thirds}O_3-\chiBa(Co_{\fraction one-third}\Nb_{\fraction two-thirds})O_3$ ceramics($\chi$=0.3,0.4,0.5,0.6) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500~1575^{\circ}C$ for5 hours in air. The BMT-BCN ceramics have a complex perovskite structure, and have peaks of (101), (102), (201), (202) and (212). Increasing the sintering temperature, dielectric constant was increased. Temperature coefficients of resonant frequency of the specimens were decreasing with increasing BCN content. In the case of the 0.7BMT-0.3BCN ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 28, 235500 at ㎓ and -$1.2 ppm/^{\circ}C$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1491-1493
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• 2002

The 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction patterns, major phases of the 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics were coexisted. Also the secondary phase of Mg$Ti_2O_5$, Ba$Mg_6Ti_6O_{19}$ and the unreacted $TiO_2$ phase were existed. In the case of 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics sintered $1350^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 33.7, 54,900GHz, -12.5ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.196-197
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• 2005

The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권3호
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• pp.110-114
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• 2001

$0.7Ba(Mg{\frac}_{1}{3}Ta{\frac}_{1}{3})O_3-0.3Ba({\frac}_{1}{3}Nb{\frac}_{1}{3})O_3ceramics$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500{\sim}1575[^{\circ}C]$ for 5 hours in air. The microwave dielectric properties of the specimens were investigated with sintering temperature. The 0.7BMT-0.3BCN ceramics showed typical XRD patterns of the complex perovskite structure. Dielectric constant and quality factor were increased with increasing the sintering temperature. In the case of the specimens sintered at $1575[^{\circ}C]$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency were good values of 28,23545 at 10[㎓] and -1.2 $[ppm/^{\circ}C]$, respectively.