• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.6
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• pp.122-127
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• 2011

In this study, it was compared collecting performance according to contact types between heatpipe and manifold of vacuum tube type solar collector. Between two types, direct contact type is better in collecting performance. On the other hand, Indirect type have advantage in maintenance. In the result of numerical analysis, As the temperature of heatpipe and flow rate of working fluid increased, difference of outlet mean temperature of two types became large. Also, it could be confirmed, as contact resistance between heatpipe and copper tube in indirect type increased, the difference increased too. Useful data in selection and design in vacuum tube type solar collector were proposed by the results of numerical analysis.

• Journal of Astronomy and Space Sciences
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• v.20 no.2
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• pp.133-142
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• 2003

The contact binary system has been classified in five different types according to their physical properties. We suggest that extremely small mass ratio contact binary systems(q＜0.2) could be classified as a new type of contact binaries in addition to the classification. According to the Svechnikov & Kuznetsova (1990)'s catalogue, the spectral types of primary components of newly classified contact binaries are distributed at A type, and also the distribution of their various physical characteristics is laid at the center region dividing the early-type contact binaries from late-type contact binaries.

• Journal of Korean Society of Water and Wastewater
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• v.26 no.2
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• pp.257-264
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• 2012

The concept of a non-contact type of UV disinfection system was introduced in this study. UV lamps and their quartz sleeves hang over the water surface and there is no interface between the sleeve and water. Obviously, there is no fouling. Based on optical laws and other UV distribution models, a detail mathematical model for a non-contact type UV disinfection system was developed in this study. Pathway length of UV light in a non-contact type photoreactor is longer than that in a submerged type photoreactor because the light is more refractive while passing through 3 interfaces of medium. But the pathway length passing through the water media is not significantly longer than that in a submerged type photoreactor so, the absorption of UV light by water is not significantly different from the other system. Due to the reflection effect, UV intensity is rapidly decreased as the horizontal distance from the light source is increased. The reflective attenuation in a non-contact type photoreactor is higher than that in a submerged type photoreactor. These mean that the short photoreactor is advantageous than the narrow-long photoreactor for the non-contact type photoreactor in an optical point of view.

• Communications of the Korean Mathematical Society
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• v.35 no.2
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• pp.639-651
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• 2020

Consider a gradient Einstein-type metric in the setting of K-contact manifolds and (κ, µ)-contact manifolds. First, it is proved that, if a complete K-contact manifold admits a gradient Einstein-type metric, then M is compact, Einstein, Sasakian and isometric to the unit sphere 𝕊²ⁿ⁺¹. Next, it is proved that, if a non-Sasakian (κ, µ)-contact manifolds admits a gradient Einstein-type metric, then it is flat in dimension 3, and for higher dimension, M is locally isometric to the product of a Euclidean space 𝔼ⁿ⁺¹ and a sphere 𝕊ⁿ(4) of constant curvature +4.

• Tribology and Lubricants
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• v.11 no.2
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• pp.24-33
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• 1995

This paper presents the contact stress distributions between the multi-contact bodies and the total reaction forces for various types of contact geometry for multi-load slewing ring bearings. The FEM results indicate that the slope of the roller type of slewing ring bearing has slightly steeper than that of the ball type. This is because the roller type wire race bearings is stiffer than the ball type bearing. The total reaction force of ball type slewing bearing shows much higher than that of wire race slewing bearings.

• Journal of Welding and Joining
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• v.31 no.4
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• pp.42-46
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• 2013

The contact tip for flux cored arc welding has important functions to transmit the welding current to the wire and to guide the wire to molten pool. A damaged contact tip causes a productivity reduction and a welding quality problem. In this study, the welding experiments for the wear resistance of contact tip regarding flux cored wire types were performed. With two fold type and a seamless type flux cored wires, the wear rates of contact tips were compared. In addition, the wear rate was checked according to the contact tip position.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.375-378
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• 2002

In this paper, the frequency response separation scheme is proposed for high scanning speed and simple structure of non-contact type of AFM. A self-sensing cantilever is attached on the actuator for detect the atomic force between tip and the media surface. VCM or PZT are used for actuator. This paper presents the method to simplify the actuator structure and the performance of each actuator for non-contact type AFM. Based on the frequency response separation scheme, the only one actuator plays roles 1311owing low frequency surface and modulating self-sensing cantilever tip in contrast with convention non-contact type AFM. 10 ${\mu}{\textrm}{m}$ standard grid sample imaged to verify proposed scheme. This result shows the possibility simplifying the actuator structure and reducing cost of non-contact type AFM.

• Tribology and Lubricants
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• v.16 no.4
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• pp.289-294
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• 2000

This paper present the contact stresses, which considers the shear stress at the cam and follower interface in the direct acting type valve train system of a high speed engine. To determine the contact condition, the normal contact forces are calculated by using the lumped mass dynamic modeling. The line contact is considered between the cam and follower interface. The variations of dynamic stresses are presented as a function of camshaft rotational angle. Also the effects of various design parameters are investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.