• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2003년도 추계학술발표대회 논문집
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• pp.95-98
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• 2003

In woven or knitted preforms for composites, the yams are often twisted for avoiding damage due to the contact with the textile machine elements. When the preforms of twisted yams are used in carbon/carbon composites, the thermal conductivity of the composites varies depending upon the degree of the yarn twist. This paper presents a thermal conductivity model of spun yarn composites. The thermal-electrical analogy and the averaging technique have been adopted in this analysis. The model prediction has been correlated with experimental results in order to confirm the model predictability. Parametric study has also been conducted to examine the effect of the yam twist on the thermal conductivity of spun yarn composites.

• 센서학회지
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• 제14권2호
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• 대한기계학회논문집B
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• 제38권12호
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• pp.957-962
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• 2014

본 연구에서는 나노스케일의 공간 해상도를 가지는 주사탐침열파현미경(scanning thermal wave microscopy, STWM)을 이용하여 1 차원 나노구조체의 열전도도를 정량적으로 계측하는 방법을 제시한다. 먼저, 1 차원 나노구조체의 열확산도를 계측하기 위한 STWM 의 원리를 설명한 후, 정량적인 열확산도 계측을 위한 이론적 해석 과정을 설명한다. STWM 을 이용한 본 계측기법은 열파가 이동한 거리에 따른 상대적인 위상지연만을 가지고 열확산도를 계측하여 열전도도를 구하기 때문에 탐침과 나노구조체 사이의 열접촉저항 및 나노구조체와 열원간의 열접촉저항의 영향을 받지 않으며, 나노구조체에 인가되는 정확한 열유속을 구할 필요가 없다. 따라서 기존의 측정 기법들에 비해 계측이 매우 단순하면서도 정량적인 계측이 가능하다.

• 한국응용과학기술학회지
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• 제34권3호
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• pp.650-656
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• 2017

The water-swollen hydrogels containing silicone or fluorine were prepared by copolymerization of 2-hydroxy ethyl methacylate (HEMA) with 3-(trimethoxysilyl)propyl methacrylate(SM) or 2,2,2-trifluoroethyl acrylate(FA). When the content of SM or FA increased in copolymers, there was tendency of water absorbance to decrease, whereas contact angles to increase. The hydrogels containing FA showed 2 ~ 4% higher water content and 4 ~ 5% lower contact angles compared to that of SM. Tensile strengths decreased as the content of SM increased. However, FA exhibited strength of $2.2Mpa/cm^2$ which is similar to $2.3Mpa/cm^2$ of B. FA, which implies comparatively low adherence, hence, showed better protein resistance properties than SM-based hydrogel. The photo-polymerization was also applied instead of thermal polymerization to enhance the energy efficiency. As a result, the reaction yield reached over 95% within 1 minute.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.2106-2109
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• 2008

Nanofluids have been studied as possible alternatives for heat transfer fluids to improve the efficiency of heat exchangers. There are deviations of measured effective thermal conductivities between research-groups, and the mechanisms of the effective thermal conductivity enhancement of nanofluids are not confirmed yet. In this study, the effects of particle shape on the effective thermal conductivity enhancement are discussed and presented as a possible explanation of the deviations. The particle motion effect is found to be negligible for nanofluids of high aspect ratio cylindrical particles, which is believed to be important for nanofluids of spherical particles, while the percolation network formation and contact resistance play dominant roles in determining the effective thermal conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.130-134
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• 2016

The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.151-154
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• 1998

We have investigated a correlation of the electrical properties of the Pd/Ge/Pd/Ti/Au ohmic contact on n-InGaAs with its microstructures for the high temperature application of compound semiconductor devices. The samples were heat-treated by the rapid thermal annealing at various temperatures. In the contact system, moderately good specific contact resistance was obtained even before annealing because of the low metals-InGaAs barrier height, and better ohmic performances were observed by annealing up to 400˚C. But the ohmic performance was degraded after annealing at 450˚C due to the increment of Pd$_2$Ga$\sub$5/ phases.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.72-74
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• 2002

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.

• Composites Research
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• 제31권6호
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• pp.412-420
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• 2018

본 연구에서는 면상발열체 특성을 향상시키기 위해 피치계 탄소종이에 전도성 탄소필러로 석유계 코크스, 카본블랙, 흑연을 페놀수지와 함께 함침시켰으며, 탄소종이에 함침된 탄소필러가 물리화학적 성질에 미치는 영향을 전기적, 열적 특성 분석을 통해 고찰하였다. 그 결과, 면저항과 계면접촉저항이 선형적으로 감소하였으며, 탄소필러의 함량이 증가함으로써 전기전도도와 열전도도가 향상하였다. 또한, 탄소종이에 1~5 V 전압을 인가하였을 경우 탄소종이의 면상발열 특성을 관찰하였을 때 5 V 전압에서 최대 $125.01^{\circ}C$로 발열 특성을 나타내었다. 이러한 결과는 탄소섬유 사이에 존재하는 미세공극이 채워짐으로써, 전기적 네트워크가 형성되어 전기적 및 열적 특성이 향상되었기 때문이다.