• Journal of the Korean Society for Precision Engineering
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• v.10 no.4
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• pp.206-215
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• 1993

The finite element method is applied to analyze the mechanism of metal cutting, especially micro metal cutting. This paper introduces some effects, such as constitutive deformation laws of workpiece material, friction of tool-chip contact interfaces, tool rake angle and also simulate the cutting process, chip formation and geometry, tool-chip contact, reaction force of tool. Under the usual plane strain assumption, quasi-static analysis were performed with variation of tool-chip interface friction coefficients and tool rake angles. In this analysis, cutting speed, cutting depth set to 8m/sec, 0.02mm, respectively. Some cutting parameters are affected to cutting force, plastic deformation of chip, shear plane angle, chip thickness and tool-chip contact length and reaction forces on tool. Several aspects of the metal cutting process predicted by the finite element analysis provide information about tool shape design and optimal cutting conditions.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Polymer(Korea)
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• v.24 no.6
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• pp.802-809
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• 2000

Counterion-specific helix formation and ion-selective transport of alkali metal chlorides (LiCl, NaCl, KCl, CsCl) were investigated for a poly(L-glutamic acid)(PLGA)/poly (vinyl alcohol)(PVA) blend membrane immersed in aqueous ethanol. The counterion specificity for helix formation of PLG alkali metal salts in the membrane was Li>Na>K>Cs. This specificity is ascribed to a contact ion-pair formation between the PLG carboxyl anion and the bound counterion, which depends on the energy balance between the electrostatic interaction and the desolvation. In aqueous ethanol, an appreciable ion-selectivity was observed for the permeability coefficient, i.e. Li$^{+}{\cdot}$Cl$^{-}$) formation between counterion and coion, and the latter to a specific interaction of diffusing counterions with polymer charges.

• Economic and Environmental Geology
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• v.7 no.3
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• pp.101-122
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• 1974

The study area is located in between Susanri and Hwanggangri where the formations of Okcheon group and Chosun group supposedly come in contact so that the area is structurally very import. Present study reveals that the meta-volcanic rocks distribute from south to north along contact zone of Okcheon and Chosun groups in the center of the area. Meta-volcanic rocks seem to be originated from the andesite or andesitic basalt rocks which was known to be Surchangri formation consist of phyllite and black slate by previous workers. The meta-volcanic rocks intruded along the fault zone one existed between Okcheon and Chosun groups but obliterated at present by the intrusion of volcanic rocks. The fault seems to be overthrust, and one of the positive evidences of thrust fault is the Yamisan nappe structure in Yamisan near Susanri. This interpretation coincides with O.J. Kim's work which states that the Precambrian Okcheon group is largely overturned and thrusted over the Chosun group. The relation between the Surchangri and the Majeonri formation marks facies change. This fact together with northpluging anticlinal structure made it possible that both formation came into contact along direction without fault. Yongam formation is not overlain unconformably used to be believed by previous workers, but interbed in the Great Limestone series of Chosun goup. It is also clarified that the rock formerly designated as limesilicate rock was meta-liparite. The origin of amphibole pebbles in the Kunjasan formation is of primary and secondary ones; the secondary pebbles were formed by metamorphism of the fragments of limestone or dolomite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.5
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• pp.661-669
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• 1986

In this study, the resistance spot welding process of an aluminum alloy was analyzed through the numerical simulation including the electric contact resistance and the heat generation in the electrode. The finite element model was used to solve the electro-thermal responses in weld cycles. The resistance of the contact area was represented as the contact element modeling, but the thermal resistance between the contact surfaces was neglected. Welding tests of Alclad 2024-T3 aluminum alloy were made not only to get the input data for the numerical simulation, but also to compare the numerical results. The contact resistance was determined initially by the contact resistance tests and assumed to decay exponentially up to the solidus temperature. The temperature distributions and dynamic resistance obtained numerically were in good agreement with the experimental results. Numerical results revealed that nugget growth depends mainly on the heat generated in the workpiece and its contact area. The heat generated in the electrode has, however, only a little effect on the nugget growth, and the heat generation in the electrode-workpiece interface is initially high but decrease repidly.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.267-268
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• 2002

Engine testing of new low-sulfur, low-phosphorus anti wear components is expensive and time consuming so bench testing of potential candidates is highly desirable as a first step evaluation. Electrical contact resistance (ECR) has been shown to be a convenient method to assess antiwear film formation in a ball-on-flat bench wear test. Correlation of the bench test to fired engines was demonstrated for lubricants varying only in the type of detergent. Previous papers have examined film formation by one and two component formulations of zinc dialkyldithiophosphate (ZnDTP) and detergents. In this study, the ECR technique is systematically extended to formulations including ZnDTP, detergent, and dispersant. Both type and level of components are considered and the implications for engine performance are discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.38.1-38.1
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• 2010

The trend to thinner crystalline silicon solar wafers in production of solar cells investigates re-evolution of back surface field (BSF) formation. We have studied mechanisms of back contact formation in Al evaporation and screen printed Al paste for Si solar cells by TEM analysis. We observed that Si diffuse into Al during heat up. The Si diffusion process made vacancies in Si wafer. The Al began to seep into the Si wafer (Al spike). During heat down, the Al spike were shrink which causes the doped region (BSF).

• Journal of Environmental Science International
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• v.13 no.3
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• pp.297-300
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• 2004

We have been proposed model equation which is able to predict the trihalomethane producing concentration formation, that is one of byproduct, in the water treatment processes. In proposed model, the effects of trihalomethane factors like chlorine contact time, pH, temperature, TOC and UV-254 are considered. The concentration of the trihalomethane produced is proportion to the contact with chlorine, pH of water, temperature of water TOC and UV-254, respectively. This proposed model could be predicted the formed concentration of trihalomethanes by trihalomethane factors.