• Journal of Korea Foundry Society
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• v.31 no.2
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• pp.66-70
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• 2011

Hot dip aluminizing (HDA) is widely used in industry for improving corrosion resistance of material. The formation of intermetallic compound layers during the contact between dissimilar materials at high temperature is common phenomenon. Generally, intermetallic compound layers of $Fe_2Al_5$ and $FeAl_3$ are formed at the Al alloy and Fe substrate interface. In case of cast iron, high contact angle of graphite existed in the matrix inhibits the formation of intermetallic compound layer, which carry with it the disadvantage of a reduced reaction area and mechanical properties. In present work, the process for the removal of graphite existed on the surface of specimen has been investigated. And also HDA was proceeded at $800^{\circ}C$ for 3 minutes in aluminum alloy melt. The efficiency of graphite removal was increased with the reduction of particle size in sanding process. Graphite appears to be present both in the region of melting followed by re-solidification and in the intermetallic compound layer, which could be attributed to the fact that the surface of cast iron is melted down by the formation of low melting point phase with the diffusion of Al and Si to the cast iron. Intermetallic compound layer consisted of $Fe(Al,Si)_3$ and $Fe_2Al_5Si$, the layer formed at cast iron side contained lower amount of Si.

• Journal of Korean Society of Water and Wastewater
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• v.30 no.5
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• pp.511-519
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• 2016

Shale gas has become increasingly important as a viable alternative to conventional gas resources. However, one of the critical issues in the development of shale gas is the generation of produced water, which contains high concentration of ionic compounds (> TDS of 100,000 mg/L). Accordingly, membrane distillation (MD) was considered to treat such produced water. Experiments were carried out using a laboratory-scale direct contact MD (DCMD). Synthetic produced water was prepared to examine its fouling propensity in MD process. Antiscalants and in-line filtration were applied to control fouling by scale formation. Fouling rates (-dJ/dt) were calculated for in-depth analysis of fouling behaviors. Results showed that severe fouling occurred during the treatment of high range produced water (TDS of 308 g/L). Application of antiscalant was not effective to retard scale formation. On the other hand, in-line filtration increased the induction time and reduced fouling.

• The Journal of Korean Academy of Prosthodontics
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• v.32 no.4
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• pp.573-592
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• 1994

A two-stage procedure is ideal for getting a successful osseointegration. But if a one-stage procedure can achieve a similar osseointegration, the one-stage procedure has several advantages. The purpose of this study was to observe the initial bone formation and bone remodeling of open type (nonsubmerged) and closed type (submerged) titanium implants. Eight ITI hollow-screws and eight Branemark fixtures were divided into two groups (submerged and nonsubmerged) and were installed on the lower jaws of four mongrel dogs. The animals were sacrificed three months later and bone sections with implants were processed for light microscopic and fluorescent microscopic observation. The results were as follows : 1 There was no significant difference in bone-to-implant contact between submerged and nonsubmerged implants. 2. Smooth surface titanium implants showed more bone-to-implant contact than that of titanium plasma coated implants histologically. 3. Under fluorescent microscopy, the active bone remodeling and new bone formation were observed in the interface zone. 4. Under fluorescent microscopy, submerged and nonsubmerged implants had no difference in bone remodeling pattern, and intramembranous bone formation was more prominent. 5. The connective tissue fibers orienting perpendicularly toward implant surface were oberved in the neck of implants.

• Journal of Microbiology and Biotechnology
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• v.25 no.11
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• pp.1871-1879
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• 2015

The complex roles of flagella in the pathogenesis of Campylobacter jejuni, a major cause of worldwide foodborne diarrheal disease, are important. Compared with the wild-type, an insertional mutation of the flgA gene (cj0769c) demonstrated significant decrease in the biofilm formation of C. jejuni NCTC11168 on major food contact surfaces, such as polystyrene, stainless steel, and borosilicate glass. The flgA mutant was completely devoid of flagella and non-motile whereas the wild-type displayed the full-length flagella and motility. In addition, the biofilm formation of the wild-type was inversely dependent on the viscosity of the media. These results support that flagellar-mediated motility plays a significant role in the biofilm formation of C. jejuni NCTC11168. Moreover, our adhesion assay suggests that it plays an important role during biofilm maturation after initial attachment. Furthermore, C. jejuni NCTC11168 wild-type formed biofilm with a net-like structure of extracellular fiber-like material, but such a structure was significantly reduced in the biofilm of the flgA mutant. It supports that the extracellular fiber-like material may play a significant role in the biofilm formation of C. jejuni. This study demonstrated that flgA is essential for flagellar biosynthesis and motility, and plays a significant role in the biofilm formation of C. jejuni NCTC11168.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.8
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• pp.755-759
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• 2008

As a disinfection byproduct, N-nitrosodimethylamine(NDMA) formation was studied according to chlorine, nitrogen, and carbon composition related to monochloramine and dimethylamine(DMA) concentrations. The highest NDMA formation was observed when the dimethylamine/monochloramine ratio was close to 1, and the formation was rapidly decreased when the ratio was less or greater than 1. The formation of NDMA increased with increasing chlorine/nitrogen ratio indicating the chlorine is a limiting factor. A rapid disinfection byproduct was formed at 72 hour contact time in this study. As the previous researches, pH was a significant factor for the NDMA formation.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.31.2-31.2
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• 2013

We use grid-based hydrodynamic simulations to study star formation in nuclear rings in barred galaxies. The gaseous medium is assumed to be infinitesimally thin, isothermal, and unmagnetized. To investigate various situations, we vary the total gas content in the bar regions and the bar growth time. We find that star formation rate (SFR) in a nuclear ring is determined by the mass inflow rate to the ring rather than the total gas mass in the ring. The SFR shows a strong primary burst and weak secondary bursts at early time, and declines to small values at late time. The primary burst is caused by the rapid gas infall to the ring due to the bar growth, with its duration and peak depending on the bar growth time. The secondary bursts result from re-infall of the ejected gas by star formation feedback of the primary burst. When the SFR is low, ages of young star clusters exhibit an azimuthal gradient along the ring since star formation takes place mostly near the contact points between the dust lanes and the nuclear ring. When the SFR is large, on the other hand, star formation is widely distributed throughout the whole length of the ring, with no apparent age gradient of star clusters. Regardless of SFR, star clusters have a positive radial age gradient, with younger clusters located closer to the ring, since the ring shrinks in size over time.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.9-9
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• 2007

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.291-292
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.