• 한국초전도ㆍ저온공학회논문지
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• 제7권2호
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• pp.21-26
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• 2005

Breakdown characteristics and survival probability of turn-to-turn models were investigated under ac and impulse voltage at 77K. For experiments, two test electrode models were fabricated: One is point contact model and the other is surface contact model. Both are made of copper wrapped by O.025mm thick polyimide film(Kapton). The experimental results were analyzed statistically using Weibull distribution in order to examine the wrapping number effects on voltage-time characteristics under ac voltage as well as under impulse voltage in LN$_{2}$. Also survival analysis were performed according to the Kaplan-Meier method. The breakdown voltages of surface contact model are lower than that of point contact model, because the contact area of surface contact model is wider than that of point contact model. Besides, the shape parameter of point contact model is a little bit larger than that of surface contact model. The time to breakdown t$_{50}$ is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.280-280
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• 2010

태양전지의 효율을 증가시키는 방법에는 표면 패시베이션, 접촉면적의 가변, back contact의 두께 가변 등이 있다. 특히, back contact 두께의 가변을 통하여 open circuit voltage의 감소를 최소화 할 수 있을 것이라고 전망 되고 있다. open circuit voltage 은 회로가 개방된 상태로, 무한대의 임피던스가 걸린 상태에서 빛을 받았을 때 태양전지의 양단에 전위차가 형성된다. 본 연구에서는 back contact 두께 가변에 따른, open circuit voltage의 변화를 확인하고 분석하는 것에 그 일차적인 초점을 두었다. 또한, open circuit voltage 뿐만 아니라, short circuit current density, fill factor, series resistance 등의 분석을 하였으며, efficiency를 계산하여 back contact 두께의 가변에 따른 소자 특성의 변화 분석을 통하여 최적화된 back contact위 두께를 연구하였다. 접촉면적에 따른 소자의 성능 변화는 후면 $SiN_X$ 70nm가 open circuit voltage를 15mV ~ 20mV 감소시키는 것을 확인 할 수 있었다. 그 이유는 $SiN_X$가 너무 두꺼우면 BSF 덜 형성되기 때문이다. 최종적으로 $SiN_X$ 두께를 얇게하면 open circuit voltage 의 감소를 최소화 할 수 있을 것이라는 판단을 할 수 있다. 이에, back contact인 $SiN_X$ 두께 가변에 따른 open circuit voltage의 변화를 확인하였다. $SiN_X$ 두께가 증가함에 따라, Positive charges 와 Hydrogen 함유량이 증가하며, 이에 BSF 두께 감소하였다. 또한, $SiN_X$ 두께가 감소함에 따라 Doping barrier로서 역할을 못하게 되어 후면에 n+층 형성되어 open circuit voltage가 급격히 하락하였다. 본 연구에서는 back contact인 $SiN_X$ 두께를 10nm, 30nm, 50nm, 80nm 로 가변하며 실험을 진행하였다.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.356-362
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• 2004

Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• 한국재료학회지
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• 제26권10호
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.632-635
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• 2004

The purpose of this paper is to investigate the effect of arc current and contact velocity on the erosion of silver-based contact materials to be used in low voltage circuit breakers. The opening velocity during breaking, which is constant, ranges between 2m/s to 6m/s in the 415V $25kA_{rms}$. Contact erosion is evaluated by measuring the mass change of the cathode and anode. The results show that the increase in opening velocity from 2m/s to 6m/s leads to a decrease in the contact erosion. It is shown that the material transfer from one electrode to another depends on the transfer charge and the opening velocity of the contacts. The contact pairs of AgWC/AgCdO are superior to $AgWC/AgSnO_2In_2O_3$ or AgWC/AgC contact pairs in the contact erosion.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.10-14
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• 2013

We have clearly investigated with respect to the survival of the insulator at cryogenic temperature under the electrical stress. The breakdown and voltage-time characteristics of turn-to-turn models for point contact geometry and surface contact geometry using copper multi wrapped with polyimide film for an HTS transformer were investigated under AC and impulse voltage at 77 K. Polyimide film (Kapton) 0.025 mm thick is used for multi wrapping of the electrode. As expected, the breakdown voltages for the surface contact geometry are lower than that of the point contact geometry, because the contact area of the surface contact geometry is lager than that of the point contact geometry. The time to breakdown t50 decreases as the applied voltage is increased, and the lifetime indices increase slightly as the number of layers is increased. The electric field amplitude at the position where breakdown occurs is about 80 % of the maximum electric field value. The relationship between survival probability and the electrical stress at cryogenic temperature was evident.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.2215-2216
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• 2011

In this study, the dynamic characteristic of a contact wire and pantograph suppling electrical power to electrical railway vehicle is investigated from an electrical response point of view. To analysis voltage and current waveforms by induced contact loss phenomenon on driving electrical railway vehicle, a hardware Simulator which considered contact loss between contact wire and the pantograph as well as contact wire deviation is developed. It is confirmed that a contact wire and pantograph model are necessary for studying the dynamic behavior of the pantograph system. Throughout prototype simulator and contact wire and catenary wire experiments, it is confirmed that current waveforms is distorted by contact loss phenomenon and in case of driving electrical railway vehicle.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1361-1366
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• 2008

Failure mechanism of the poor contact is analyzed on the basis of used connectors and this poor contact of connectors is reappeared by the new forced fretting wear method. As the result of failure analysis and reappearance, fretting wear and corrosion of the contact interface causes the contact resistance degradation and the poor contact of connectors. The amount of degradation depends on the fretting stroke. Changes in contact resistance of static contacts are likely to be small and gradual, while motions of contact interface may result in larger and discontinuous changes in resistance and voltage. This voltage drop by fretting motions is large enough to cause the distortion of sensor signal and mis-working of electric components.