• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.50-54
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• 1983

Contact resistance variation which may be called sliding noise in carbon film variable resistors whose resistance elements consists of linear resistivity distribution were measured with several kinds of sliders and were analyzed to reduce the contact resistance variation. About the measuring method, the standard method of measuring contact resistance variation specified by the variable Resistance Components Institute was adupted. By analyzing the experimental results, it has been shown that the primary cause of contact resistance variation is due to current constriction and small discharge sparks in the resistance film in the area close to the slide contact. Moreover, it has been found that the sliding noise would be reduced by increasing the number of contact points, sliding speed, and pressure, and by using some kinds of insulation oil on the contacting surface. High contact resistance variation is likely to occur in the area of high resistance variation in a logrithmic resistance taper.

• Geophysics and Geophysical Exploration
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• v.18 no.1
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• pp.9-13
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• 2015

All the resistivity data contain various kinds of noise. The major sources of noise in DC resistivity measurement are high contact resistance, measurement errors, and sporadic background noise. Thus, it is required to measure data noise to accurately interpret resistivity data. Reciprocal measurements can provide a measure of data precision and noise. In this study, we proposed a data-weighting method from reciprocity measurement. Furthermore, a data-weighting method using both the reciprocity error and data-misfit in the inversion process was studied. Applying the data-weighting method to the inversion of 3D resistivity data, it was confirmed that local anomalies are slightly suppressed in the final inversion results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.174-180
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• 1998

In this work, the properties of FRP, which is applied recently in the composite insulating materials, by thermal treatment were investigated. The specimens were epoxy glass laminates fabricated by thermal press method and had the volume content of 46[%] cutted $45^{\circ}C$ in the fiber direction and 1.0[mm] thickness. The experimental results showed that the amount of weight loss, wettability, surface potential, and surface resistivity increased up to 200[$^{\circ}C$] as a function of temperature. Usually, most degradations caused the hydrophilic to decrease the contact angle. But, in this work on thermal-degradated FRP, we can confirm the introduction of hydrophobic properties by cross-linking and the ablation of polar small-molecules rather than chain scission and oxidation. Finally, weight loss and contact angle increased. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. But, the dielectric properties and tensile stength are decreased.

• Journal of Integrative Natural Science
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• v.4 no.4
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• pp.294-297
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• 2011

Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.

• New & Renewable Energy
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• v.4 no.2
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• pp.74-80
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• 2008

To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.390-393
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• 2008

To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.43-49
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• 2002

Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1\times10^{-6}\Omega\textrm{cm}^2$ was achieved after annealing at $400^{\circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{\Omega}\textrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.834-837
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• 2003

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.