• Journal of the Korean Ceramic Society
• /
• v.35 no.3
• /
• pp.294-302
• /
• 1998

$Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ films have been synthesized on Pt/Ti/$SiO_2$/Si substrates using rfmagnetron sputtering Concentration of Fe and Nb in the deposited films was adjusted to near stoichiometry through the control of target composition, Films deposited with adjusted to near stoichiometry showed better electrical properties such as dielectic and leakage characteristics. Crystallinity and dielectric constant increased with increasing excess PbO upto 9 mol% This study also showed that dielectric constant and leakage current characteristics improved by optimum content of $O_2$ flow during deposition.

• Proceedings of the KIEE Conference
• /
• 2007.11c
• /
• pp.101-107
• /
• 2007

In this paper, the pulse charger with mode consersion type is proposed that can reuse the waste lead battery. The pulse charger uses the switch mode of the forward convert method. The pulse charger maintain the constant voltage in state removing the lead battery and when it connected the pulse charger, it is converted the charge mode of the constant current immediately. It continues the rapid charge until the full state of the lead battery. After that the pulse charger is converted to the charge mode of constant voltage automatically, and then it continues the normal charge. The experiment results show that the effectiveness of pulse charger such as the good performance and the prolonged durability in lead battery according to capacity states.

• Proceedings of the KIPE Conference
• /
• 1998.10a
• /
• pp.547-553
• /
• 1998

In this paper, we composed of utility interactive pv generation system of voltage source inverter, and represented uninterrutible power supply (UPS) equipment maintaining constant voltage, using a pulse width modulation(PWM) voltage fed inverter, as power source disconnection, voltage variation and output current variation with load variation. This system is driven by being synchronized voltage fed inverter and AC source, and in the steady state of power source charge battery connected to dc side with solar cell using a photovoltaic (PV) that it was so called constant voltage charge. In addition, better output waveform was generated because of PWM method, and it was proved to test by experiment maintained constant output voltage regardless of AC source disconnection, load variation, and voltage variation of AC power source.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.16 no.1
• /
• pp.89-94
• /
• 2013

Electro Otical Tracking System(EOTS) is required for a rapid movement as well as the stabilization of Line-Of-Sight(LOS). In order to achieve these two goals, this paper presents a position and velocity driving profile generation method from the constant acceleration and deceleration profile according to the current state, enabling a fast and smooth trajectory even if the target position changes during the movement of LOS. Simulation and experimental results reveal that the settling time could be reduced significantly by adopting the present position control scheme.

• Proceedings of the KIPE Conference
• /
• 2001.07a
• /
• pp.308-311
• /
• 2001

Most of the battery charger for electric powered forklift truck are controlled by the method of 3-phased constant current and constant voltage. However, these chargers have several disadvantages like a large charger capacity, and a short battery life time. This paper presents a digital type battery charger based on multi-mode control adding a constant power control and several assistant controls in the conventional control. The whole control system is performed by a low cost one-chip micro-controller and completely digitize. So we can get a high precision control and a good reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.12
• /
• pp.1090-1095
• /
• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.42-45
• /
• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.34-38
• /
• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 제어로봇시스템학회:학술대회논문집
• /
• 1988.10b
• /
• pp.794-797
• /
• 1988

G. Binnig and H. Rohrer introduced the Scanning Tunneling Microscope (STM) in 1982 and developed it into a powerful and not to be missed physical tool. Scanning tunneling Microscopy is a real space surface imaging method with the atomic or subatomic resolution in all three dimensions. The tip is scanned over the surface by two piezo translators mounted parallel (X-piezo and Y-piezo) to the surface and perpendicular to each other. The voltage applied to the third piezo (Z-piezo) translator mounted perpendicular to the surface to maintain the tunneling current through the gap at a constant level reflects then the topography of the surface. The feed back control loop for the constant gap current is designed using the automatic control technique. In the designing process of the feed back loop, the identification of the gap dynamics is very complex and has difficulty. In this research, using some suitable test signals, the system dynamics of the gap including the Z-piezo are investigated. Especially, in this paper, a system model is proposed for the gap and Z-piezo series system. Indicial response is used to find out the model. The driving voltage of the Z-piezo and the tunneling current are considered as input and output signals respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.472-473
• /
• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.