• Journal of Bio-Environment Control
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• v.16 no.4
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• pp.395-406
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• 2007

The twenty seven wrap-up vegetables (13 Compositae, 14 Brassicaceae) and seven herbs (6 Labiatae, 1 Umbelliferae) were cultivated with a deep flow technique (DFT) hydroponic beds and treated with 3 levels of nutrient solution concentrations of 1.2, 2.4, and $3.6dS{\cdot}m^{-1}$ in summer and autumn season. The pH and electrical conductivity (EC) change of nutrient solution, fresh weight, and mineral contents of plants were investigated. The pH was maintained lower in high electrical conductivity (EC) treatment and in summer than autumn. EC of nutrient solution in EC $3.6dS{\cdot}m^{-1}$ treatment increased up to $4.8dS{\cdot}m^{-1}$ during the growing period in summer season. The growth of tested plants showed high variations by plant species and nutrient solution concentrations. The coefficient variation (CV) of the shoot fresh weight of plants was higher in summer than autumn. The growth of Compostiae and herbs was better at EC $1.2dS{\cdot}m^{-1}$, and 14 Brassicaceae was better at EC $2.4dS{\cdot}m^{-1}$ in summer. In autumn, the growth was better at EC $2.4dS{\cdot}m^{-1}$ in all plants except kale 'TBC F1' and red rape 'honchaetae'. In mineral contents, total nitrogen and potassium were higher in autumn than summer. Total nitrogen, potassium, calcium, magnesium were higher in Brassicaceae than others. Iron and manganese, however, were higher in Compositae. As the results, this study suggests that mixed planting of 27 wrap-up vegetables and 7 herbs in DFT hydroponics in two seasons was possible and EC $1.2dS{\cdot}m^{-1}$ in summer and EC $2.4dS{\cdot}m^{-1}$ in autumn be recommended as for the nutrient solution concentration to produce them safely year round.

• Journal of Plant Biotechnology
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• v.5 no.3
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• pp.173-179
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• 2003

The combination of a radiation technique with an in vitro culture system was appiled to develop submergence tolerant rice. The 3,000 $M_3$ lines with an average 80 percent of fertile grain were utilized for the selection of submergence tolerance. Salt tolerant lines were selected based on high plant height, root length and root number after submergence in plastic pots. Of the lines tested, the tolerant line (403-6) showed a dramatic difference in morphological traits under submergence compared to its original variety (Dongjinbyeo). It was suggested that genetic variations between the original variety and $M_3$-403-6 did exist. The levels of $\alpha$-amylase and alcohol dehydrogenase activities were significantly increased in the mutant line compared to its original variety. The mutant with greater tolerance showed less electrolyte leakage indicating a greater membrane integrity and better survival. Also, this line was much more resistant to a salt stress of $1.25\%$ than the original variety. The proline level of the line was significantly (p<0.01> higher than that of the original variety. The relationships between the inhibition of growth caused by stress and the physiological changes in the plant cell were discussed.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.293-297
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• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.39-42
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• 1999

Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Carbon letters
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• v.17 no.1
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• pp.39-44
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• 2016

The work presented in this report was a detailed comparative study of the electrochemical response exhibited by graphite anodes in Li-ion batteries having different physical features. A comprehensive morphological and physical characterization was carried out for these graphite samples via X-ray diffraction and scanning electron microscopy. Later, the electrochemical performance was analyzed using galvanostatic charge/discharge testing and the galvanostatic intermittent titration technique for these graphite samples as negative electrode materials in battery operation. The results demonstrated that a material having a higher crystalline order exhibits enhanced electrochemical properties when evaluated in terms of rate-capability performance. All these materials were investigated at high C-rates ranging from 0.1C up to 10C. Such improved response was attributed to the crystalline morphology providing short layers, which facilitate rapid Li⁺ ions diffusivity and electron transport during the course of battery operation. The values obtained for the electrical conductivity of these graphite anodes support this possible explanation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.3
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• pp.135-142
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• 2018

In this study, we have fabricated n-type $Bi_2Te_{2.85}Se_{0.15}$ compounds by different processing routes such as crushing, milling and mixing respectively. Subsequently, the obtained powders were consolidated by spark plasma sintering (SPS). The phase crystallinity of bulk samples were identified using X-ray diffraction technique. Powder morphology and fracture surface of bulk samples were observed using the scanning electron microscopy (SEM). The Seebeck coefficient and electrical conductivity values were significantly increased for the milling sample than crushing and mixing samples. As a result, the maximum power factor was obtained $2.4mW/mK^2$, which is thrice than that of crushing process. The maximum figure of merit (ZT) of 0.77 was achieved at 400 K for the milling sample. Furthermore, relatively high hardness and density values were noticed for the different processed samples.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.15-18
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• 2000

Transparent conducting tin (IV) oxide thin films have been studied and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process conditions and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.01-cm and the transmittance is higher than $90\%$ in a visible range.

• Journal of Hydrogen and New Energy
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• v.21 no.4
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• pp.271-277
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• 2010

$(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.