• Nuclear Engineering and Technology
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• 제52권3호
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• pp.508-519
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• 2020

During transients or accidents, the reactor core is uncovered, and droplets entrained above the quench front collides with the uncovered fuel rod surface. Droplet impact cooling can reduce the peak cladding temperature. Besides zirconium-based cladding, versatile accidental tolerant fuel (ATF) claddings, including FeCrAl, have been proposed to increase the accident coping time. In order to investigate the effect of surface properties on droplet impact cooling of cladding surfaces, the droplet impact phenomena are photographed on the FeCrAl and zircaloy-4 (Zr-4) surfaces under different conditions. On the oxidized FeCrAl surface, the Leidenfrost phenomenon is not observed even when the surface temperature is as high as 550 ℃ with We > 30. Comparison of the impact behaviors observed on different materials shows that nucleate and transition boiling is more intensive on surfaces with larger thermal conductivity. The Leidenfrost point temperature (LPT) decreases with the solid thermal effusivity (${\sqrt{k{\rho}C_p}}$). However, the CHF temperature is relatively insensitive to the surface oxidation and Weber number. Droplet spreading diameter is analyzed quantitatively in the film boiling stage. Based on the energy balance a correlation is proposed for droplet maximum spreading factor. A mechanistic model is also developed for the LPT based on homogeneous nucleation theory.

• 대한전기학회논문지
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• 제44권10호
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.143-143
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• 2010

In this study, we demonstrate that ZnO deposited onto $SiO_2$ substrates by magnetron sputtering produces p-type ZnO at higher $O_2$ pressure and n-type ZnO at lower $O_2$ pressure. We also report the effect of hydrogen peroxide ($H_2O_2$) on the stability of undoped ZnO thin films. The films were immersed in 30% $H_2O_2$ for 1 min at $30^{\circ}C$ and annealed in $O_2$at $450^{\circ}C$. The carrier concentration, mobility. and conductivity were measured by a Hall effect measurement system. The Hall measurement results for ZnO films untreated with $H_2O_2$ but annealed in $O_2$ indicate that oxygen fraction greater than ~0.5 produces undoped p-type ZnO films, whereas oxygen fraction less than ~0.5 produces undoped n-type ZnO films. This is attributed to the fact that the oxygen vacancies ($V_o$) decrease and the oxygen interstitials ($O_i$) or zinc vacancies ($V_{Zn}$) increase with increasing oxygen atoms incorporated into ZnO films during deposition and $O_2$ post-annealing.

• 대한기계학회논문집B
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• 제40권2호
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• pp.111-117
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• 2016

본 연구의 목적은 실리콘 열전달 조절을 위한 포논의 평균자유행로(Mean free path, MFP) 스펙트럼 열전달 기여도 예측이다. 열전달의 크기 효과는 포논의 MFP 와 재료의 특성길이가 비슷할 때 나타나는데, 나노시스템 응용을 위한 재료의 열전달 증감을 위해 포논 MFP 스펙트럼에 대한 열전달 기여도 예측이 중요하다. 이를 위해 포논의 주파수 의존성이 고려된 볼츠만 수송방정식(Boltzmann transport equation) 근간의 full phonon dispersion 모델을 통해 실리콘 박막(Silicon-on-Insulator) 트랜지스터의 실리콘 박막 두께 변화(41-177 nm)에 따른 포논 MFP 스펙트럼 열전달 특성 및 비등방성을 해석함으로써, 본 연구 결과는 향후 박막 트랜지스터에 대한 고효율 열소산(heat dissipation) 설계전략에 활용될 수 있다.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• 전자공학회논문지D
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• 제34D권12호
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• 한국진공학회지
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• 제6권3호
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• pp.227-234
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• 1997

ITO, AZO, SZO 투명전도박막의 수소 플라즈마에 대한 안정성에 관하여 연구하였 다. ITO는 Corning 사의 제품을 사용하였고, AZO와 SZO는 rf magnetron sputtering 방법 으로 증착한 것을 이용하였다. 이 세가지 투명전도박막을 PECVD 챔버 내에 장착한 다음, 수소 플라즈마에 노출시켰다. 이 때 ITO 박막의 광투과도는 시편 표면의 온도와 시간이 증 가할수록 감소하였는데 특히 $300^{\circ}C$에서 30분간 노출시켰을 때 10~20%정도의 광투과도를 나타내었으며, 박막의 전도성을 완전히 잃어 버렸다. 반면 AZO와 SZO의 경우, 수소 플라즈 마 노출 온도와 시간에 대해 전반적으로 광투과도 손실이 나타나지 않았다. 하지만 박막내 수소의 유입으로 인하여 흡수대가 단파장 쪽으로 이동하는 'Burstein-Moss'효과가 나타났 다. 또한 표면구조에서도 AZO와 SZO가 수소 플라즈마 노출에 대해 안정성을 보인 반면 ITO의 표면은 indium과 tin의 금속입자로의 환원으로 인해 매우 거칠어짐을 보였다.

• Composites Research
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• 제23권3호
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• pp.13-18
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• 2010

나노 재료를 다룰 때 큰 문제 중의 하나는 반데르발스(van der Waals) 상호작용으로 응집되어 있는 나노 입자, 특히 CNT를 어떻게 효과적으로 분산시킬 수 있는가이다. 본 연구에서는 나노 입자를 효과적으로 분산시킬 수 있는 방법으로 코로나 방전(corona discharge) 현상과 정전식모(electrostatic flocking) 공정을 이용한 새로운 분산방법인 방전식모(dischare flocking) 장치를 고안하였으며 분산특성을 평가하기 위하여 방전식모 및 RFI 공정으로 복합재료 시편을 제작하여 전기적, 기계적 특성을 비교하였다. 더욱이, CNT와 에폭시의 기체 방전 효과를 평가하기 위하여 플라즈마 처리된 CNT를 사용하여 복합재료를 제작하였으며 전기적, 기계적 특성을 측정하였다. 방전식모 공정으로 제작 된 복합재료 시편의 특성은 RFI로 제작된 시편과 유사하였으며 방전식모 공정중의 기체방전 현상은 플라즈마 처리된 CNT에 영향을 주지 않았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.