• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.32-35
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• 2007

In this article, a novel annealing technique using alternating magnetic field (AMF) is adopted to improve the electrical characteristics of pentacene film, thereby enhancing the performance of pentacene-based organic thin film transistors (OTFTs). According to the investigation results, the electrical conductivity in the pentacene film could be increased from 0.32 to 1.18 S/cm by annealing the pentacene film using AMF. And also, OTFTs with the pentacene film annealed by AMF exhibited an improved performance compared to the device without annealing. These results suggest that an annealing using AMF can be an effective method to improve the performance of devices based on organic semiconductors.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.109-112
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• 2017

Various wt. ratios of indium were doped to the poly(3,4-ethylenedioxythiophene)-poly(styreneswulfonate) (PEDOT:PSS) to enhance the conductivity and transmittance. The transmittance of the films increased with increasing the amount of indium. The field emission scanning electron microscope (FESEM) image of 2.54 wt. % of indium doped PEDOT:PSS film shows large number of aggregated indium particles. However, more than 2.54 wt. % of indium doped PEDOT:PSS films showed reduced aggregated indium particles. Moreover, 4.47 wt. % of indium doped PEDOT:PSS film showed no aggregated particles. The resistivity of pure PEDOT:PSS film showed $880k{\Omega}{\cdot}cm$. The resistivity of 1.03 wt. % indium doped film reduced approximately 26 times compared with pure PEDOT:PSS film. The resistivity of indium doped film further reduced with increasing the amount of indium, which showed approximately $0.55k{\Omega}{\cdot}cm$ for the PEDOT:PSS film doped 4.47 wt. % of indium.

• Journal of the Korean Society of Visualization
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• v.21 no.3
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• pp.33-38
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• 2023

Spray cooling is a method of cooling high-temperature heating elements by spraying droplets. Recently, spray cooling has been proposed for use in next-generation nuclear reactors. When droplets are sprayed onto the outer wall of a heat exchanger tube, a film boiling occurs on the outer wall. Over time, the outer wall temperature decreases, and a liquid film forms on the outer wall, and the heat exchanger outer wall is subsequently cooled by the liquid film. In this case, the liquid film thickness has a great influence on the heat removal performance. In this study, an experimental study was conducted to measure the liquid film thickness distribution in a droplet spray environment. For this purpose, a method using the electrical conductivity of the liquid was adopted.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Fibers and Polymers
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• v.5 no.3
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• pp.198-203
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• 2004

Composite films were prepared by casting the solution of polyacrylonitrile (PAN) and single wall nanotube (SWNT) in DMF subsequent to sonication. The SWNTs in the films are well dispersed as ropes with 20-30 nm thickness. Moreover, AFM surface image of the composite film displays an interwoven fibrous structure of nanotubes which may give rise to conductive passways and lead to high conductivity. The polarized Raman spectroscopy is an ideal characterization technique for identification and the orientation study of SWNT. The well-defined G-peak intensity at 1580 $cm^{-1}$shows a dependency on the draw ratio under cross-Nicol. The degree of nanotube orientation in the drawn film was measurable from the sine curve obtained by rotating the drawn film on the plane of cross-Nicol of polarized Raman microscope. The threshold loading of SWNT for electrical conductivity in PAN is found to be lower than 1 wt% in the composite film. The electrical conductivity of the SWNT/PAN composite film decreased with increasing of draw ratio due to the collapse of the interwoven fibrous network of the nanotubes with uniaxial orientation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.786-788
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• 2013

Molybdenum (Mo) thin film has high electrical conductivity and has been used for a back contact of CIGS thin film solar cell. Generally, the electrical conductivity and the adhesion between the substrate and the film is greatly affected by sputtering conditions such as sputtering power, working pressure, and substrate temperature. In this study, Mo films were deposited by DC magnetron sputtering technique. The influence of sputtering pressure on the electrical and structural properties of Mo films was investigated by using SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, Reflectance, Hall measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.218-220
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• 1996

A composite films were prepared by using Polyphenylenediamine(PPD) synthesized in our lab. and crystalline V$_2$O$_{5}$ in various mixture ratio for using positive active material of polymer film battery. The thermal stability of prepared composite film was carried out by using TGA. Electrical conductivity of composite film were also measured by using four-probe method in dry box. The thermal stability of prepared composite film is more than 35$0^{\circ}C$. The electrical conductivity of composite film increased and showed the highest value(about 23 S/cm) when doped at 0.4% LiCiO$_4$solution.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.105-108
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• 1996

The positive active material for polymer film battery was prepared by using Polyphenylenediamine(PPD) synthesized in our lab. and 2.5-dimercapto-1, 3, 4-thiadiazole(DMcT) in various mixture ratio. The transference measurement of surface morphology and thermal stability of prepared composite film was carried out by using SEM and TGA, respectively. Electrocyhemical property and electrical conductivity of composite film were also measured by using cyclic voltammetry and four-probe method in dry box, respectively. The thermal stability of prepared composite film is more than 20$0^{\circ}C$. The electrical conductivity of composite film increased and showed the highest value(about 3 S/cm)when doped at 0.4% LiClO$_4$solution. And we could confirm that DMcT effect on reactiviation of PPD through cyclic voltammogram.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.