• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.287-292
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• 1999

The conducting composites were prepared by solution blending of polyaniline (PANI) as a conducting polymer and polycarbonate (PC) as a matrix in chloroform. Also the composites film was prepared by solution casting method. The PANI was protonated with alkylbenzenesulfonic acids, such as camphorsulfonic acid (CSA) or dodecylbenzenesulfonic acid (DBSA). The electrical conductivity of composites prepared by solution casting was enhanced compared with that of compression molding. The electrical conductivity, tensile strength and morphology were observed as a function of the amount of protonating agent as well as PANI complex content. In general, as the PANI complex content was increased, the electrical conductivity increased. In the case of the composite film containing 25 wt % of PANI complex doped with DBSA, the electrical conductivity exhibited 3.18 S/cm.

• Journal of Electrochemical Science and Technology
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• v.1 no.1
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• pp.57-62
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• 2010

The lithium ion concentration dependant ionic conductivity and thermal properties of poly(ethylene glycol) methyl ether methacrylate (PEGMA)/acrylonitrile-based copolymer electrolytes with $LiClO_4$ have been studied by differential scanning calorimetry (DSC), linear sweep voltammetry (LSV) and AC complex impedance measurements. In systems with 11 wt% of acrylonitrile all liquid electrolytes were obtained regardless of lithium ion concentration. Complex impedance measurements with stainless steel electrodes give ambient ionic conductivities $8.1\times10^{-6}\sim1.4\times10^{-4}S cm^{-1}$. On the other hand, a hard and soft films at ambient temperature were obtained in copolymer electrolyte system consists of 15 wt% acrylonitrile with 6 : 1 and 3 : 1 of [EO] : [Li] ratio, respectively. DSC measurements indicate the crystalline melting temperature of poly(PEGMA) disappeared completely after addition of $LiClO_4$ in this system due to the complex formation between ethylene oxide (EO) unit and lithium salt. As a result, free standing film with room temperature ionic conductivity of $1.7\times10^{-4}S cm^{-1}$ and high electrochemical stability up to 5.5V was obtained by controlling of acrylonitrile and lithium salt concentration.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.54-60
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• 1997

The electrical and electromagnetic shielding properties have been investigated in polyaniline free standing films with different degrees of elongation cast from N-methyl 2-pyrrolidone(NMP) solution and camphorsulfonic acid(HCSA) doped polyaniline film. The degree of crystallinity of the crosslinked films increased with increasing the draw ratio. For the case of the oriented films doped with hydrochloric acid, we have the values of conductivities up to 173 S/cm. It is considered that the physical micro-crystalline crosslinking domains act as nucleation sites for the increase of relative crystallinity during stretching. We have obtained the value of conductivity 210 S/cm in the HCSA doped polyaniline film cast from the solvent of m-cresol, which is higher than that of the crosslinking oriented films. The electromagnetic shielding efficiency of HCSA doped polyaniline film obtained 37-41 dB in the frequency range of 10MHz-1GHlz, which is higher than that of the crosslinking oriented films. The higher value of electromagnetic shielding efficiency of HCSA doped polyaniline film suggests strong possibility of electromagnetic shielding material.

• Composites Research
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• v.23 no.3
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• pp.31-36
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• 2010

A new material, carbon-nanofiber/polypyrrole (CNF/PPy) composite films, with different CNF weight ratios were fabricated electrochemically. Compared to the fabrication process based on simple physical mixing, the flexibility of the new film has been improved much better than the previous similar material. Pure PPy films were also fabricated by the new electrochemical process for the comparison of difference. Several SEM images were taken at two locations (electrode-side and solution-side) and at the cross section of the samples. Electrical conductivity of the composite films was measured by the four-probe method. The conductivity of the pure PPy film 0.013cm thick was 79.33S/cm. The CNF/PPy composite film with 5% CNF showed a conductivity of 93S/cm. One with 10% CNF showed a conductivity of 126 S/cm. The conductivity of PPy improves, as the CNF weight ratio increases. The good conductivity of CNF/PPy composites makes them a candidate for a small bending actuator. A bending sensor consists of PPy and PVDF, which can be operated in the air, was designed and the bending deflection was calculated using FEM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Composites Research
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• v.35 no.2
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• pp.53-60
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• 2022

This study uses Diglycidyl ether of terephthalylidene-bis-(4-amino-3-methylphenol) (DGETAM), an amine hardener 4,4'-diaminodiphenylethane (DDE) and cationic catalyst N-benzylpyrazinium hexafluoroantimonate (BPH) to make epoxy film. For analysis, ¹H_NMR and FT-IR were used to verify proper synthesis, and the liquid crystallinity of DGETAM was checked using Differntial Scanning Calorimetry and Polarized Optical Microscopy. Thermal conductivity of the sample was measured using Laser Flash Apparatus. Thermal stability as well as thermal conductivity is important when used as a packaging material. Activated energy is the energy needed to generate a response, which can be used to estimate the energy required to maintain physical properties. It was obtained using the Arrhenius equation based on the data measured by isothermal decomposition using Thermogravimetric Analysis. Measurement of the thermal conductivity of epoxy films showed higher thermal conductivity when DDE was used, and it was found that thermal conductivity had an effect on thermal stability, given that it represented an activation energy similar to a film with BPH upon 5% decomposition.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.433-438
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• 2007

We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.551-556
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• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.78-86
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• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2453-2458
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• 2007

The performance of polysilicon thin film transistor (p-Si TFT) has an important role in the operation of active matrix liquid crystal displays. To fabricate the p-Si TFTs that have uniform characteristics, understanding of the recrystallization mechanism of silicon is crucial. Especially, the analysis of the transient temperature variation and the liquid-solid interface motion is required to find the mechanism. The thermal conductivity is one of the most important parameters to understand the mechanism. In this work, a KrF eximer laser beam was irradiated to amorphous silicon thin films. We measured the transient reflectivity at the wavelength of 633 nm. We carried out the numerical simulation of one dimension conduction equation so that we determined the most well-fitted thermal conductivity by comparing the numerically obtained transient reflectivity with the experimentally measured one. The experimentally determined thermal conductivity of amorphous silicon thin films is 1.5 W/mK.