• Title/Summary/Keyword: Conduction Path

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Thermal contact resistance on elastoplastic nanosized contact spots (탄소성접촉면의 나노스케일 열접촉저항)

  • Lee, Sang-Young;Cho, Hyun;Jang, Yong-Hoon
    • Proceedings of the KSME Conference
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    • 2008.11b
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    • pp.2214-2219
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    • 2008
  • The thermal contact resistance(TCR) of nanosized contact spots has been investigated through a multiscale analysis which considers the resolution of surface topography. A numerical simulation is performed on the finite element model of rough surfaces. Especially, as the contact size decreases below the phonon mean free path, the size dependent thermal conductivity is considered to calculate the TCR. In our earlier model which follows an elastic material, the TCR increases without limits as the number of nanosized contact spots increases in the process of scale variation. However, the elastoplastic contact induces a finite limit of TCR as the scale varies. The results are explained through the plastic behavior of the two contacting models. Furthermore, the effect of air conduction in nanoscale is also investigated.

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Design of Low Consume Power Ty7e Micro-heaters Using SOl and Trench Structures (SOI 및 TRENCH 구조를 이용한 저소비 전력형 미세발열체의 설계)

  • Jang, Soo;Hong, Seok-Woo;Lee, Jong-Chun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.350-353
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    • 1999
  • This Paper Presents the optimized design of micro-heaters using 501(Si-on-insulator) substrate and oxide-filled trench structure In order to justify a lumped model approximation and thermal boundary assumptions, two-dimensional FDM(finite difference among which conduction is the dominant heat dissipation path. Compared with no-trenchs on the SOI structure, the micro-heaters with trench structures has properties of low heater loss and good thermal isolation. The simulation results show that the heater loss decreases as the number. width and distance of trenchs increases.

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A New Zero-Voltage-Switching Bridgeless PFC, Using an Active Clamp

  • Ramezani, Mehdi;Ghasedian, Ehsan;Madani, Seyed M.
    • Journal of Power Electronics
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    • v.12 no.5
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    • pp.723-730
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    • 2012
  • This paper presents a new ZVS single phase bridgeless (Power Factor Correction) PFC, using an active clamp to achieve zero-voltage-switching for all main switches and diodes. Since the presented PFC uses a bridgeless rectifier, most of the time, only two semiconductor components are in the main current path, instead of three in conventional single-switch configurations. This property significantly reduces the conduction losses,. Moreover, zero voltage switching removes switching loss of all main switches and diodes. Also, auxiliary switch turns on zero current condition. The presented converter needs just a simple non-isolated gate drive circuitry to drive all switches. The eight stages of each switching period and the design considerations and a control strategy are explained. Finally, the converter operation is verified by simulation and experimental results.

Non-isolated Bidirectional Soft-switching SEPIC/ZETA Converter with Reduced Ripple Currents

  • Song, Min-Sup;Son, Young-Dong;Lee, Kwang-Hyun
    • Journal of Power Electronics
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    • v.14 no.4
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    • pp.649-660
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    • 2014
  • A novel non-isolated bidirectional soft-switching SEPIC/ZETA converter with reduced ripple currents is proposed and characterized in this study. Two auxiliary switches and an inductor are added to the original bidirectional SEPIC/ZETA components to form a new direct power delivery path between input and output. The proposed converter can be operated in the forward SEPIC and reverse ZETA modes with reduced ripple currents and increased voltage gains attributed to the optimized selection of duty ratios. All switches in the proposed converter can be operated at zero-current-switching turn-on and/or turn-off through soft current commutation. Therefore, the switching and conduction losses of the proposed converter are considerably reduced compared with those of conventional bidirectional SEPIC/ZETA converters. The operation principles and characteristics of the proposed converter are analyzed in detail and verified by the simulation and experimental results.

Capacity Change of Supercapacitor by Surface Treatment of Carbon Nanotubes (카본 나노튜브의 표면 처리에 의한 수퍼캐패시터 용량 변화)

  • Kim, Yong-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.6
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    • pp.532-536
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    • 2009
  • In this study, the capacity change of supercapacitor was investigated by surface treatments of carbon nanotubes as electrode materials with various methods, such as ball-milling, $KMnO_4$ and $H_2SO_4/HNO_3$ acid mixture. Surface treatments generated a number of defects on the surface of carbon nanotubes by attacking on $\pi$ bond in graphene layer, at which carboxyl groups were introduced. These hydrophilic groups could enhance the capacity by increasing the wettability of carbon nanotube surfaces. However, a drawback of the surface treatment was the decrease of conductivity by the loss of conduction path in graphene layer due to the defect formation. The surface treatment condition should be therefore optimized between hydrophilicity increase and conductivity decrease.

Analysis of Off Current for Conduction Path of Asymmetric Double Gate MOSFET (전도중심에 따른 비대칭 이중게이트 MOSFET의 차단전류 분석)

  • Jung, Hakkee;Kwon, Ohshin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.759-762
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    • 2014
  • 비대칭 이중게이트(double gate; DG) MOSFET는 단채널 효과를 감소시킬 수 있는 새로운 구조의 트랜지스터이다. 본 연구에서는 비대칭 DGMOSFET의 전도중심에 따른 차단전류를 분석하고자 한다. 전도중심은 채널 내 캐리어의 이동이 발생하는 상단게이트에서의 평균거리로써 상하단 게이트 산화막 두께를 달리 제작할 수 있는 비대칭 DGMOSFET에서 산화막 두께에 따라 변화하는 요소이며 상단 게이트 전압에 따른 차단전류에 영향을 미치고 있다. 전도중심을 구하고 이를 이용하여 상단 게이트 전압에 따른 차단전류를 계산함으로써 전도중심이 차단전류에 미치는 영향을 산화막 두께 및 채널길이 등을 파라미터로 분석할 것이다. 차단전류를 구하기 위하여 포아송방정식으로부터 급수 형태의 해석학적 전위분포를 유도하였다. 결과적으로 전도중심의 위치에 따라 차단전류는 크게 변화하였으며 이에 따라 문턱전압 및 문턱전압이하 스윙이 변화하는 것을 알 수 있었다.

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Deviation of Threshold Voltage and Conduction Path for the Ratio of Top and Bottom Oxide Thickness of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 상하단 산화막 두께비에 따른 문턱전압 및 전도중심의 변화)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.765-768
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    • 2014
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심의 변화에 대하여 분석하고자한다. 비대칭 이중게이트 MOSFET는 상하단 게이트 산화막의 두께를 다르게 제작할 수 있어 문턱전압이하 영역에서 전류를 제어할 수 있는 요소가 증가하는 장점이 있다. 상하단 게이트 산화막 두께 비에 대한 문턱전압 및 전도중심을 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였다. 이때 전하분포는 가우스분포함수를 이용하였다. 하단게이트 전압, 채널길이, 채널두께, 이온주입범위 및 분포편차를 파라미터로 하여 문턱전압 및 전도중심의 변화를 관찰한 결과, 문턱전압은 상하단 게이트 산화막 두께 비에 따라 큰 변화를 나타냈다. 특히 채널길이 및 채널두께의 절대값보다 비에 따라 문턱전압이 변하였으며 전도중심이 상단 게이트로 이동할 때 문턱전압은 증가하였다. 또한 분포편차보단 이온주입범위에 따라 문턱전압 및 전도중심이 크게 변화하였다.

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Balance Winding Scheme to Reduce Common-Mode Noise in Flyback Transformers

  • Fu, Kaining;Chen, Wei
    • Journal of Power Electronics
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    • v.19 no.1
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    • pp.296-306
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    • 2019
  • The flyback topology is being widely used in power adapters. The coupling capacitance between primary and secondary windings of a flyback transformer is the main path for common-mode (CM) noise conduction. A Y-cap is usually used to effectively suppress EMI noise. However, this results in problems in space, cost, and the danger of safety leakage current. In this paper, the CM noise behaviors due to the electric field coupling of the transformer windings in a flyback adapter with synchronous rectification are analyzed. Then a scheme with balance winding is proposed to reduce the CM noise with a transformer winding design that eliminates the Y-cap. The planar transformer has advantages in terms of its low profile, good heat dissipation and good stray parameter consistency. Based on the proposed scheme, with the help of a full-wave simulation tool, the key parameter influences of the transformer PCB winding design on CM noise are further analyzed. Finally, a PCB transformer for an 18W adapter is designed and tested to verify the effectiveness of the balance winding scheme.

Effect of Dispersant Contents on the Dispersity of Conductive Carbon-black and Properties of Screen-printed Source-drain Electrodes for OTFTs (분산제 함량에 따른 전도성 카본블랙의 분산 특성 및 스크린 인쇄된 OTFTs용 소스-드레인 전극 물성)

  • Lee, Mi-Young;Bae, Kyung-Eun;Kim, Seong-Hyun;Lim, Sang-Chul;Nam, Su-Yong
    • Polymer(Korea)
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    • v.33 no.5
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    • pp.397-406
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    • 2009
  • We have fabricated source-drain electrodes for OTFTs using a screen-printing technique with carbon-black pastes as conductive paste. And effects of dispersants contents (SOP 10-40%) on the dispersity of carbon-black pastes and characteristics of screen-printed source-drain electrodes for OTFTs using two types of dispersants (DB-2150, DB-9077) were investigated. As contents of both dispersants were increased the dispersity of carbon-black mill-bases was improved, whereas the carbon-black pastes exhibited different dispersion characteristics. For the case of DB-2150, the dispersity of the pastes was improved with increasing dispersant content and the storage modulus G' in their rheology characteristics were reduced. But, for the DB-9077, the storage modulus G' of pastes were increased with dispersant content due to the flocculated network structure formed by interactions among carbon-black powders and dispersants. But, since this flocculated network structure of the pastes using DB-9077 resulted in the conduction path of carbon-black structures, the conductivities of screen-printed electrodes and mobilities of the OTFTs with them were better than those using pastes with DB-2150.

Effect of the Pore Structure on the Anodic Property of SOFC (SOFC 음극의 기공구조가 음극특성에 미치는 영향)

  • 허장원;이동석;이종호;김재동;김주선;이해원;문주호
    • Journal of the Korean Ceramic Society
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    • v.39 no.1
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    • pp.86-91
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    • 2002
  • Solid Oxide Fuel Cells (SOFC) are of great interest of next generation energy conversion system due to their high energy efficiency and environmental friendliness. The basic SOFC unit consists of anode, cathode and solid electrolyte. Among these components, anode plays the most important role for the oxidation of fuel to generate electricity and also behaves as a substrate of the whole cell. It is normally requested that the anode materials should have the high electrical conductivity and gas permeability to reduce the polarization loss of the cell. In this study, the effect of pore former on the microstructure of anode substrate was investigated and thus on the electrical conductivity and the gas permeability. According to the results, microstructure and electrical conductivity of anode substrate were greatly influenced by the shape of pore former and especially by the anisotrpy of the pore former. The use of anisotropic pore former is supposed to deteriorate the cell performance by which the electrical conduction path is disconnected but also the effective gas diffusion path for the fuel is reduced.