• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2004년도 학술대회지
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• pp.57-61
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• 2004

According to the research result of existing regarding the seabed organic sediment, contamination it flows from the land and the sea become the enemy in the coastal water. It was caused with the summer season water temperature rise and dispersing recall respect advancement. Phosphorus which is a main reason of red tide actual condition came to reveal vast quantity with the facts that it gushes. Specially, in the case of the coastal closing waters and the nursery, as the corpse and the fresh fish washing veterinarian was imbrued, it is the actual condition where is more deepened. Consequently the development of shallow layer dredging method of that suction power which is stabilized is demanded to be able to dredge only the sediment layer which has not become the pressure and is a main reason of being imbrued. The dredging methods using the pressure difference minimize the suction of the seabed sediment. This method is stable that suction power which occurs from guard difference of the guard and the guard of the dredging system inland water. That's why it is possible to sort dredging of the organic sediment ranging in upper layer sediment and it will be able to expect the minimization of dredging quantity. Increase of the expense that it followsin orthocenter with the fact will not grow. Because the pressure difference of the dredger inland water is occurred by the suction power. Maintenance administrative costs are reduced, because the one of smallest dredging system maneuvers and the barge which affixes an integrated operation system is mainly in a resting. To reduce a dredging hour, it will be able to solve in the condensed water as operating the jar guard post.

• 공업화학
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• 제10권7호
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• pp.985-989
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• 1999

유기 실란화합물을 사용하여 실리카($SiO_2$)박막을 감압 유기금속 화학증착법(LPMOCVD)으로 제조하였다. 원료로는 triethyl orthosilicate(TRIES)를 사용하였다. 실험조건은 반응기의 출구압력을 1~100 torr, 반응온도는 $600{\sim}900^{\circ}C$로 하였다. 높은 반응온도와 원료농도에서는 $SiO_2$가 빠른 성장속도를 나타내었다. 마이크로 스케일 트랜치에서 층덮임이 좋게 나타났는데, 이것은 응축된 다량체들이 트랜치쪽으로 유동하는 현상 때문으로 생각되었다. 원료가스가 중합반응을 하여 다량체(2량체, 3량체, 4량체 등)들이 생성되고, 그 다량체들이 확산하여 고체표면에서 응축되는 반응경로를 따를 것으로 추정된다. 반응관의 출구에서 기상중의 화학종들을 사극질량분석기로 분석한 결과, 반응온도 $650{\sim}700^{\circ}C$에서는 단량체, 원료가스의 2량체, 고분자들의 피크가 관측되었다. 고온($900^{\circ}C$)에서는 거의 모든 원료가스와 중간체(중합된 다량체) 분자들이 산화되었거나 차가운 관벽에 응축되어 고분자들의 피크가 없어졌다.

• 공업화학
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• 제16권2호
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• pp.194-199
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• 2005

본 연구에서는 배연가스속에 함유되어 있는 휘발성 유기화합물과 입자물질 등의 오염물질을 보텍스 사이클론의 원리를 이용하여 동시에 제거하는 메카니즘을 규명하고 나아가 효율을 높이기 위한 영향인자들을 분석 하였다. 보텍스 사이클론 속에 접선방향으로 압축된 공기를 주입함으로써 Joule-Thomson 팽창에 의하여 형성된 저온부분에서 페놀, 탄산가스 및 수분이 활성탄소 입자표면에 응집, 응축 및 흡착이 일어나도록 하였다. 활성탄소와 같은 입자물질은 쉽게 응축될 수 있는 물질들이 저절로 응집이나 응축은 입자물질의 입경이 증가함에 따라 속도는 급속도로 빨라져서 제거효율이 상승된다. 본 연구실험에서 탄산가스와 페놀의 제거효율은 각각 87.3%와 93.8%로 얻어졌다. 그리고 페놀 제거효율은 톨루엔과는 달리 상대습도의 증가에 따라 함께 증가되었고, 활성탄의 주입으로 제거효율도 증폭되었다. Joule-Thomson 계수는 상대습도 10%~50% 범위에서는 도입되는 압력이 높아짐에 따라 같이 상승하였다. 실험의 결과로는 도입되는 압력과 수분이 보텍스 사이클론의 처리효율에 미치는 영향은 공기 속에 함유되어 있는 대상물질의 물리화학적 특성과 입자물질의 특성에 따라 많은 영향을 받고 있음을 알 수 있고, 따라서 휘발성 유기화합물의 제거효율은 수분의 양과 입자물질의 물리화학적 특성을 조절함으로 제어할 수 있다고 판단된다.

• 한국초전도ㆍ저온공학회논문지
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• 제3권1호
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• pp.64-68
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• 2001

An experimental study on the Joule-Thomson cryocooler with the mixed refrigerant (MR) is described in this paper, J-T refrigeration experiment was performed with a single stage regular air-conditioning compressor The mixed refrigerant in the experiment was composed of 75% mol fraction of $N_2$. 30% moi fraction of CH$_4$. 30% moi fraction of $C_2$H$_{6}$. 10% mot fraction of $C_3$H$_{8}$ and 15% mot fraction of iso-C$_4$H$_{10}$. Oil mist in the MR stream could be eliminated completely by the glass microfiber filter. Since a single stage compressor that had been designed thor R22 is not appropriate for high Pressure ratio of the mixed refrigerant especially during the transient period. two modifications were incorporated to regular J-T refrigeration cycle. First. a Portion of the MR was by-passed at the inlet of the heat exchanger and transferred directly to 7he suction of the compressor in the modified system. Second, a buffer volume was Prepared to change the mass flow rate of refrigerant. The pressure ratio in J-T expansion device was relieved at the beginning of the operation due to the by-Pass scheme. but it gradually decreased during the transient Process as some of the MR component condensed at low temperature. The buffer volume at the suction side was used to increase the MR gas density in the system after the transient cool-down period. Form the experiment with the modified system, the refrigerator could reach the lowest temperature of -152$^{\circ}C$ without cooling load. and about -15$0^{\circ}C$ with 5 W of cooling load . . . .

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.61-64
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $O_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.615-618
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• 2003

동시 성막법에 의한 저속 성장으로 Bi 2201 및 Bi 2212 박막을 제작하였다. Bi 2212의 조성이 되도록 각 원소를 공급하고 기판 온도 및 산화 가스 압력을 변화시켜 성막을 한 결과 낮은 기판 온도에서는 Bi 2201의 단상이 생성되었으며 75$0^{\circ}C$ 이상이 되면 Bi 2212 상이 생성되었다. 이 중간 온도 영역에서는 Bi 2212와 Bi 2201의 고용체가 생성되고 있음을 해석하였다. 순차 성막법에서 생성막을 평가한 결과 성막이 이루어지고 있는 박막의 가장 표면은 목적 조성으로부터 벗어난 상태에 있으며 결정 구조의 전하 중성 조건을 예상한 곳의 표면은 불안정하다는 것을 알 수 있었다. Bi 2201 상이 생성된 막에서도 순차 성막 과정에 의한 막 생성이라기보다는 오히려 박막 내부에서의 원자 확산 과정에 의해 생성된 것으로 생각된다.

• 대한기계학회논문집B
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• 제32권6호
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• pp.446-454
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• 2008

The purpose of this paper is to analyze two-phase flows of the hydrogen recirculation system. Two-phase flow modeling is one of the great challenges in the classical sciences. As with most problems in engineering, the interest in two-phase flow is due to its extreme importance in various industrial applications. In hydrogen recirculation systems of fuel cell, the changes in pressure and temperature affect the phase change of mixture. Therefore, two-phase flow analysis of the hydrogen recirculation system is very important. Two-phase computation fluid dynamics (CFD) calculations, using a commercial CFD package FLUENT 6.2, were employed to calculate the gas-liquid flow. A two-phase flow calculation was conducted to solve continuity, momentum, energy equation for each phase. Then, the mass transfer between water vapor and liquid water was calculated. Through an experiment to measure production of liquid water with change of pressure, the analysis model was verified. The predictions of rate of condensed liquid water with change of pressure were within an average error of about 5%. A comparison of experimental and computed data was found to be in good agreement. The variations of performance, properties, mass fraction and two-phase flow characteristic of mixture with resepct to the fuel cell power were investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• 대한금속재료학회지
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• 제48권2호
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• pp.154-162
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• 2010

A fundamental study of the distillation behavior of ferromanganese alloy melts was carried out at 1773 K and 0.1333 kPa (=1 Torr). During the distillation of ferromanganese alloy melts under reduced pressure, manganese vaporizes preferentially to phosphorus and other solute elements. High purity manganese metal with a very low content of solute elements can be obtained by distillation of ferromanganese alloy melts. The evaporation of manganese is suppressed as the carbon content of ferromanganese alloy melt increases due to the decrease of activity and vapor pressure of the manganese. When the carbon content of ferromanganese alloy melt is high, melt droplets are ejected from the bath, especially in the early stages of the distillation, and the solute elements in the splashed droplets contaminate the condensed material. The ejection of melt droplets is presumed to be caused by the increase of melting temperature and viscosity of the surface layer of melt due to the enrichment of solute elements such as carbon and iron.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.90-93
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• 2002

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.