• 한국진공학회지
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• 제9권3호
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• pp.267-272
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• 2000

electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111)방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45nm의 TaN막이 $450^{\circ}C$, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111)우선 배향과 열처리에 의한 결정립 성장 및 defect감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.297-297
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• 2006

Recently columnar liquid crystals have been studied due to their possible application to organic conducting materials. Supramolecular columnar liquid crystals consist of mesogenic unit which can aggregate into discs that will make up the columns which associate to form a two-dimensional network. In this study, we prepared supramolecular columnar liquid crystals containing hydrogen bonding between carboxylic acid and, pyridine moieties. Thermal and structural properties of prepared complexe were investigated, and it exhibited hexagonal columnar structure ($Col_{h}$) at room temperature.

• 한국주조공학회지
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• 제42권3호
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• pp.153-160
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• 2022

초내열합금 625 튜브의 제조에 필요한 원심주조품의 두께에 따라 응고조직과 기계적 특성에 미치는 영향을 고찰하였다. 10, 17, 50 mm 두께로 원심주조한 625합금에서 두께의 증가에 따라 주상정 부분의 길이와 2차 수지상 간격이 약간 증가하였으나 상온 인장특성은 큰 차이를 보이지 않았다. 주상정 부분의 응고는 일방향응고의 형태로 응고가 진행되기 때문에 일방향응고 조건을 변화시켜 2차 수지상의 간격을 비교하여 각 두께의 주조품에서 응고속도를 계산하였다. 두꺼운 주조품일수록 내부 다결정 조직의 비율이 증가하였다. 다결정 부분의 인장특성은 주상정 부분의 평균값과 유사한 값을 보였으며 이는 2차 수지상의 간격보다 결정립 형태의 영향인 것으로 사료된다.

• 한국세라믹학회지
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• 제32권10호
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• pp.1103-1110
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• 1995

Silicon carbide (SiC) films have been deposited on the isotropic graphite by chemical vapor deposition. Change of deposition parameters affected significantly the microstructure and preferred orientation of SiC films. Preferred orientation of SiC films was (111) or (220), and microstructure showed the startified structure consisting of small crystallite or faceted columnar structure depending on the deposition parameters. For microhardness, (111) oriented film and stratified structure were superior to (220) oriented film and faceted columnar structure, respectively. Surface of (111) oriented films was less rough than that of (220) oriented films. Adhesion force between graphite substrate and SiC films was above 100N for crystalline films and 49N for amorphous film.

• 한국주조공학회지
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• 제14권6호
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• pp.508-513
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• 1994

For Pb-20wt%Cu alloys, severe macrosegregation due to density difference of the resulting phases in normal directional solidification has been minimized and a uniformly aligned dendritic structure has been produced by axially rotating the sample of 5mm diameter in conjunction with horizontal directional solidification. Under the constant growth velocity of $20{\mu}m/sec$, increasing the rotation rate from 0.18 to 12rpm results in a transition from an aligned columnar to an equiaxed Cu-dendritic structure. With a constant rotation rate of 0.18rpm, increasing the growth velocity from 10 to $50{\mu}m/sec$ also has promoted a transition from columnar to equiaxed structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.1046-1049
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• 한국주조공학회지
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• 제7권1호
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• pp.45-52
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• 1987

The effects of melting and casting conditions on cast structures of Cu-Sn-Pb alloys were studied. Specimens were prepared at different pouring temperatures of $1100^{\circ}C$ to $1260^{\circ}C$ with use of various kind of molds, green sand mold, $CO_2$ sand mold, shell mold, furan sand mold and metallic mold. (1) The transition of equiaxed to columnar structure greatly influenced by adding elements and mold binders. (2) The change of equiaxed structure according to pouring temperatures were expressed by separation theory. Lower pouring temperature and rapid cooling rate increase hardness and it's further increase was shown in the region of columnar structure. (3) Proper controls of pouring temperature, cooling rate and mold binder were important factors to improve wear properties of Cu-Sn-Pb alloys castings.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 B
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• pp.698-701
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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• pp.378-381
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• 한국결정성장학회지
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• 제19권5호
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• pp.242-245
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• 2009

종자결정을 사용하지 않고 AlN 결정을 승화법으로 성장하였으며, 결정이 성장되는 양상을 고찰하였다. AlN 결정으로 성장된 상은 다결정 상이었으며, 약 $60\sim160\;{\mu}m$의 크기를 가졌으며, $0.2\sim0.5\;{\mu}m/hr$의 성장 속도로 성장되었다. 성장된 결정구조는 AlN 결정의 결정 구조가 반영된 육방정계의 결정상으로 성장되었음을 관찰하였으며, 주상 구조(columnar structure)로 성장된 후 횡적 성장(lateral growth)하는 양상을 보이면서 대형화됨을 알 수 있었다. 성장된 결정의 표면에서는 다량의 pinhole이 관찰되었으며, 광학현미경과 SEM을 이용하여 성장 morphology의 변화과정을 고찰하였다.