• 한국균학회소식:학술대회논문집
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• 2006.10a
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• pp.13-15
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1267-1268
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• 2008

The two-shot SLS method has recently been successfully implemented in volume manufacturing of advanced LTPS-based LCDs. In this presentation, we discuss how the approach is also well suited for being implemented in high-throughput and high-yield manufacturing of large AMOLED displays on large glass substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1744-1749
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• 2006

Line-scan SLS of thin Si films permits the attainment of low-defect-density Si films with a directionally solidified microstructure. This paper deals with: (1) identifying and examining the structural defects that are found in the resultant material, (2) how the spatial variations in the type and density of the observed defects may potentially affect the overall uniformity of the resulting devices, and (3) some technical options that may be applied in order to potentially alleviate the situation.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1750-1755
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• 2006

Nonoptimal placement of short-channel-length TFTs in large-grained polycrystalline Si films with a periodic microstructure, as for instance obtained via 2-shot SLS, can potentially lead to degradation in the overall uniformity of the resultant devices. In this paper, we explain and demonstrate that by simply introducing a well-defined misorientation between the devices and the periodic microstructure, it is possible to significantly reduce (and potentially entirely eliminate) the device nonuniformity problem that can arise from such a cause.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.56-57
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• 2003

Sequential lateral solidification has recently become an option for manufacturing LTPS TFT LCDs owing to the availability of production equipment. Compared to the currently established ELA crystallization method, it is characterized by its low running costs and the high quality microstructures that can be obtained. In this presentation, we will review the production-related developments as well as elaborate on recent research activities that deal with a number of crystallization schemes that can be beneficial for future active-matrix display products.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.245-247
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• 2003

We have previously shown that single-crystal Si regions on glass substrates can be obtained by crystallizing as-deposited a-Si films using a specific version of the SLS process, referred to as dot-SLS Such single-crystal islands can, for instance, be used for manufacturing of high-performance TFTs that are expected to become increasingly more relevant in the future. In this paper, we demonstrate that the dot-SLS process can be implemented using a continuous-scan SLS scheme that enables the attainment of high crystallization rates that are desired for industrial applications. We will furthermore report on recent experimental findings regarding the nature of the defects that can be created during the process.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.7-7
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• 2007

Laser-irradiation-induced crystallization of as-deposited amorphous precursor films constitutes an integral step in fabricating LTPS TFTs. Consideration of various factors leads one to conclude that, for display manufacturers, choosing how to crystallize the films can be identified as being tactically and strategically significant. This paper will begin by reviewing the fundamental aspects of laser crystallization, and then present noteworthy advances and progress, which have recently been accomplished in the field. In particular, we will focus on communicating the evolving status associated with the sequential lateral solidification (SLS) method, which can be presently identified as the most strategically enabling crystallization method.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.156-156
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• 2012

본 연구에서는 organic 반도체 전자소자의 성능 향상을 위해 그래핀 전극과 hexagonal boron nitride(h-BN) 절연체를 이용한 높은 성능의 전자소자를 구현 하였다. 이를 위해 우리는 화학적 합성법으로 준비된 그래핀을 micro sacale pattern된 PDMS를 이용한 dry transfer 방법을 이용하였다.

• Archives of Pharmacal Research
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• v.25 no.5
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• pp.709-717
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• 2002

Hypoxemia is known to induce various physiological changes which can result in alteration in drug pharmacokinetics. To examine the effect of acute moderate hypoxemia on metoclopramide (MCP) pharmacokinetics, a continuous 14-hour infusion of MCP during a normoxemic, hypoxemic and subsequent normoxemic period was conducted in eight adult sheep. Arterial blood and urine samples were collected to examine the effects on the pharmacokinetics of MCP and its deethylated metabolites. MCP and its mono- and di-deethylated metabolites were quantitated using a GC/MS method. Steady-state concentrations of MCP were achieved in each of the three periods. During hypoxemia, MCP plasma steady-state concentration increased significantly from 50.72$\pm$1.06 to 63.62$\pm$1.79 ng/mL, and later decreased to 55.83$\pm$1.15 ng/mL during the post-hypoxemic recovery period. Total body clearance ($CL_{TB}$) of MCP was significantly decreased from 274.2$\pm$48.0 L/h to 205.40$\pm$28.2 L/h during hypoxemia, and later restored to 245.8$\pm$44.2 L/h during the post-hypoxemic period. Plasma mono-deethylated MCP concentration (32.78$\pm$1.73 ng/mL) also increased, compared to the control group (21.20$\\pm$1.39 ng/mL), during hypoxemia and subsequent normoxemic period. Renal excretion of MCP and its metabolites was also decreased during hypoxemia, while urine flow was increased with a concomitant decrease in urine osmolality. Thus, the results indicate that acute moderate hypoxemia affects MCP pharmacokinetics.

• Journal of Chest Surgery
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• v.55 no.3
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• pp.197-205
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• 2022

Background: The integrated design of the HeartMate 3 (Abbott Laboratories, Chicago, IL, USA) affords flexibility to place the pump within the pericardium or thoracic cavity. We sought to determine whether the presence of a left ventricular assist device (LVAD) in either location has a meaningful impact on overall patient outcomes. Methods: A retrospective cohort study was conducted of all 165 patients who received a HeartMate 3 LVAD via a median sternotomy from November 2014 to August 2019 at our center. Based on operative reports and imaging, patients were divided into intrapleural (n=81) and intrapericardial (n=84) cohorts. The primary outcome of interest was in-hospital mortality, while secondary outcomes included postoperative complications, cumulative readmission incidence, and 3-year survival. Results: There were no significant between-group differences in baseline demographics, risk factors, or preoperative hemodynamics. The overall in-hospital mortality rate was 6%, with no significant difference between the cohorts (9% vs. 4%, p=0.20). There were no significant differences in the postoperative rates of right ventricular failure, kidney failure requiring hemodialysis, stroke, tracheostomy, or arrhythmias. Over 3 years, despite similar mortality rates, intrapleural patients had significantly more readmissions (n=180 vs. n=117, p<0.01) with the most common reason being infection (n=68/165), predominantly unrelated to the device. Intrapleural patients had significantly more infection-related readmissions, predominantly driven by non-ventricular assist device-related infections (p=0.02), with 41% of these due to respiratory infections compared with 28% of intrapericardial patients. Conclusion: Compared with intrapericardial placement, insertion of an intrapleural HM3 may be associated with a higher incidence of readmission, especially due to respiratory infection.