• Title/Summary/Keyword: Collisional dissociation

Search Result 14, Processing Time 0.017 seconds

A Gas Phaes Kinetic Study of the Energy Transfer by using the High Power CO$_2$ Laser. (II). Decomposition of $BrCH_2CH_2CH_2CH_2Cl$

  • Lee, Yong-Sik;Kim, Yang-Sik;Jeoung, Sae-Chae;Choo, Kwang-Yul
    • Bulletin of the Korean Chemical Society
    • /
    • v.9 no.3
    • /
    • pp.161-164
    • /
    • 1988
  • Infrared multiphoton decompositions (IRMPD) of $BrCH_2CH_2CH_2CH_2Cl$ were studied by using the pulsed $CO_2$laser. At 0.3 J laser energy the experimentally observed product ratios could be reasonably explained by the RRKM calculation with initial excitation energy of ca. 80 Kcal/mol. The pressure dependence of product yields led us to conclude that the collisional deactivation by the inert gas decreased the yield of low energy dissociation channel more significantly.

Planar measurements of OH and $O_{2}$ number density in premixed $C_{3}$H$_{8}$O$_{2}$ flame using laser induced pre-dissociative fluorescence (레이저 유도 선해리 형광법(LIPE)을 이용한 화염내 OH 및 $O_{2}$ 분자의 2차원 농도 분포 측정)

  • Jin, Seong-Ho;Nam, Gi-Jung;Kim, Hoi-San;Chang, Nae-Kak;Park, Seung-Han;Kim, Ung;Park, Kyoung-Suk;Shim, Kyoung-Hoon;Kim, Gyung-Soo
    • Transactions of the Korean Society of Mechanical Engineers B
    • /
    • v.20 no.12
    • /
    • pp.4044-4052
    • /
    • 1996
  • Planar images of OH and $O_{2}$ with tunable KrF excimer laser which has a) 0.5 $cm^{-1}$ / linewidth, b) 0.5 nm tuning range, c) 150 mJ pulse energy, and d) 20 ns pulse width are obtained to determine spatial distributions of OH and $O_{2}$ in premixed $C_{3}$H$_{8}$ /O$_{2}$ flame. The technique is based on planar laser induced pre-dissociative fluorescence(PLIPF) in which collisional quenching is almost avoided because of the fast pre-dissociation. Dispersed LIPF spectra of OH and $O_{2}$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_{2}$, OH and $O_{2}$ are excited on the P$_{2}$(8) line of the $A^{2}$.SIGMA.$^{+}$(v'= 3)-X$^{2}$.PI.(v'||'||'&'||'||'quot;= 0) band and R(17) line of the Schumann-Runge band B$^{3}$.SIGMA.$_{u}$ $^{[-10]}$ (v'= 0)- X$^{3}$.SIGMA.$_{g}$ $^{[-10]}$ (v'||'||'&'||'||'quot;= 6), respectively. Dispersed OH and $O_{2}$ spectra show an excellent agreement with simulated spectrum and previous works done by other group respectively. It is confirmed that OH widely distributed around flame front area than $O_{2}$.

A Study on the Low Temperature Epitaxial Growth of $CoSi_2$ Layer by Multitarget Bias cosputter Deposition and Phase Sequence (Multitarget Bias Cosputter증착에 의한 $CoSi_2$층의 저온정합성장 및 상전이에 관한 연구)

  • Park, Sang-Uk;Choe, Jeong-Dong;Gwak, Jun-Seop;Ji, Eung-Jun;Baek, Hong-Gu
    • Korean Journal of Materials Research
    • /
    • v.4 no.1
    • /
    • pp.9-23
    • /
    • 1994
  • Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

  • PDF

Infrared Multiphoton Dissociation of $CHCl_2F$: Reaction Mechanisms and Product Ratio Dependence on Pressure and Laser Pulse Energy

  • Song, Nam-Woong;Lee, Won-Chul;Kim, Hyong-Ha
    • Journal of Photoscience
    • /
    • v.12 no.2
    • /
    • pp.101-107
    • /
    • 2005
  • Infrared multiphoton dissociation of $CHCl_2F$ was studied using $CO_2$ laser excitation. Three products, $C_2Cl_2F_2$, $C_2ClF_3$, and $C_2HClF_2$, were identified by the analysis of the gas mixture from the photoreaction of $CHCl_2F$. The dependence of the reaction probability on added Ar gas pressure and excitation laser pulse energy was investigated. At low pressure (< 10 torr), the reaction probability increased as Ar pressure increased due to the rotational hole-filling effect, while it diminished with the increase of Ar pressure at high pressure (> > 20 torr) due to the collisional deactivation. The ratio of two products $(C_2ClF_3/C_2Cl_2F_2)$ decreased at low pressure (< 10 torr) and increased at high pressure (> 20 torr) with the increase of Ar pressure. The log-log plot of the reaction probability vs. laser pulse energy (${\\phi}$) was found to have a linear relationship, and its slope decreased as the added Ar pressure was increased. The reaction mechanisms for product formation have been suggested and validated by experimental evidences and considering the energetics. Fluorine-chlorine exchange reaction in the intermediate complex has been suggested to explain the formation of $C_2ClF_3$.

  • PDF