• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• Korean Journal of Materials Research
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• v.34 no.5
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• pp.242-246
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• 2024

La modified lead zirconate titanate ceramics (Pb_0.92La_0.08)(Zr_0.95Ti_0.05)O₃ = PLZT-8/95/5 were prepared using the conventional solid state reaction method in order to investigate the complex impedance characteristics of the PLZT-8/95/5 ceramic according to temperature. The complex impedance in the PLZT-8/95/5 ceramic was measured over a temperature range of 30~550 ℃ at several frequencies. The complex dielectric constant anomaly of the phase transition was observed near T_U1 = 179 ℃ and T_U2 = 230 ℃. A remarkable diffuse dielectric constant anomalous behaviour of the complex dielectric constant was found between 100 ℃ and 550 ℃. The complex impedance spectra below and above T_U1 and T_U2 were fitted by the superposition of two Cole-Cole types of impedance relaxations. The fast component in the higher frequency region may be due to ion migration in the bulk, and the slow component in the lower frequency region is interpreted to be the formation and migration of ions at the grain boundary or electrode/crystal interfacial polarization.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.145-156
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• 2005

• 대한예방의학회:학술대회논문집
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• 2004.10a
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• pp.78.2-79
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• 2004

• Journal of the Optical Society of Korea
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• v.3 no.1
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• pp.10-14
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• 1999

Via THz Time domain spectroscopy, the characterization of high conductive n-type, 1.31Ω cm silicon can be measured by directly analyzing the multiple reflections using Fabry-Perot theory. The magnitude and phase difference of total transmission show good agreement between theoretical and experimental values over a 2.5 THz frequency range with complex index of refraction and power absorption. The measured absorption and dispersion are strongly frequency-dependent, and all of the results are well fit by a Cole-Davidson type distribution.

• Korean Architects
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• no.4 s.54
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• pp.36-41
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• 1973

‘스웨덴 룬트공과대학에서는 건물계획에 있어서 컴퓨터해법의 사용에 대한 연구사업을 수행하였으며, 이 사업은 스웨덴국립건축연구소의 경제적 지수으로 이루어졌다. 본고에서 룬트대학의 연구생인 Cole씨는 이 사업의 일부를 기술하고 있다. 그는 여기서 주로 1층이상에 대한 Whitehead와 Eldars의 산술해법과 컴퓨터에 의하여 작성된 평면배치의 동선 정의에 따른 해법의 개발에 관하여 논한다. 프로그램이 그 일부를 차지하고 있는 설계체계는 각종 컴퓨터해법을 종합할 수 있도록 하는 체계개발의 시도라고 할수 있으며 이러한 종류의 시스템은 사실상 해법에 대한 직접적인 정보의 이용과 함께 건물의 다각적인 설계를 가능케 한다.

• Polymer(Korea)
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• v.34 no.5
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• pp.485-489
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• 2010

Poly(lactic acid)(PLA) has been modified by electron radiation in the presence of 5 phr glycidyl methacrylate (GMA) to enhance the melt strength of PLA. The modified PLA was prepared by varying the dose of irradiation and was characterized by observing the thermal properties, the melt viscoelastic properties and the gel fraction. The irradiated PLA with 300 kGy in the presence of 5 phr GMA showed drastically improved complex viscosity and storage modulus properties: a complex viscosity of about 210 times higher and a storage modulus of 14500 times higher than those of virgin PLA when measured at a frequency of 0.1 rad/s. Gel fraction study revealed that a branching reaction was more dominant than a crosslinking reaction when the PLA was irradiated with less than 200 kGy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.178-178
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• 2008

ZnO 바리스터는 인가되는 전압에 따라 저항이 변하는 전압 의존형 저항체이며 각종 전기 전자 정보통신용 제품에 정전기(ESD) 대책용 소자로 폭 넓게 사용되는 전자 세라믹스 부품이다. 특별히 Bi-based ZnO 바리스터는 다양한 상(phase)으로 구성되어 있으며 그 입계의 전기적 특성은 소량 첨가되는 dopant의 종류에 따라 다양하게 변하는 것으로 알려져 있다. 본 연구에서는 Bi-based ZnO 바리스터 (ZnO-$Bi_2O_3$, ZnO-$Bi_2O_3-Mn_3O_4$)에서 각종 유전함수$(Z^*,M^*,\varepsilon^*,Y^*,tan{\delta})$를 이용하여 입계의 주파수-온도에 대한 특성을 살펴 보았다. 일반적인 ZnO 바리스터 제조법으로 시편을 제작하여 78K~800K 온도 범위에서 각종 유전함수를 이용하여 복소 평면도(complex plane plot)와 주파수 응답도(frequency explicit plot)의 방법으로 defect level과 입계 특성(활성화 에너지, 정전용량, 저항, 입계 안정성 등)에 대하여 고찰하였다. ZnO-$Bi_2O_3$(ZB)계와 ZnO-$Bi_2O_3-Mn_3O_4$(ZBM)계 모두 상온 이하의 온도에서 $Zn_i$와 $V_o$의 결함이 나타났으며, 이들의 결함 준위는 각 유전함수에 따라 다소 차이가 났다. 입계 특성으로 ZB계는 이상구간(560~660K)을 전후로 1.15 eV $\rightarrow$ 1.49 eV의 활성화 에너지의 변화가 나타났지만, ZBM계는 이러한 현상이 나타나지 않았다. 또한 입계 전위 장벽의 온도 안정성에 대해서는 Cole-Cole model을 적용하여 분포 파라미터 (distribution parameter; $\alpha$)를 구하여 고찰하였다. ZB계의 입계 안정성은 온도에 따라 불안정해 졌지만, ZBM계는 안정하였다.

• Composites Research
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• v.29 no.3
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• pp.98-103
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• 2016

This paper deals with the fabrication and verification of the microwave absorbing structure using semiconductive fiber reinforced composite. Two kinds of fiber were used to fabricate composites. Electromagnetic properties of the composites were measured by freespace measurement system over X-band. Two single slab absorbers and a double slab absorber were designed by thickness optimization method. Single slab absorbers did not show good microwave absorption performance because the permittivity is away from non-reflection curve. Double slab absorber complemented the limitations on single slab absorber and it showed good microwave absorption performance. Double slab absorber showed -43.9 dB loss near 10 GHz.