• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권8호
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• pp.409-413
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• 2001

In the electron-gun of CRT, the Mo-tip FEA was employed as cold cathode in order to replace the conventional thermal cathode. The Mo-tip FEA was designed and fabricated according to CRT specification and mounted on the electron-gun. It was known that fabricated cold cathode electron-gun showed better performance in terms of maximum emission current and switch-on time when compared with the ones of thermal cathode electron-gun, but some geometrical structures in the inside of electron-gun must be changed to reduce the gate leakage current. Finally, the potential applicability was guaranteed by means of operating the 19 inch-sized LG-color CRT using the fabricated cold cathode electron-gun.

• Applied Microscopy
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• 제46권4호
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• pp.244-252
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• 2016

This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.61-65
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• 2012

In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

• Applied Microscopy
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• 제47권3호
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• pp.86-94
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• 2017

In this study, we will describe a new design of carbon nanotubes tip. Single-walled carbon nanotubes produced using high-pressure CO over Fe particles (HiPCO) at CNI, Houston, TX used in this study. These tips were manufactured by employing a drawing technique using glass puller. Field electron microscopies with tips (cathode) to screen (Anode) separation of ~10 mm was used to characterize the electron emitters. The system was evacuated down to base pressure of (${\sim}10^{-8}$ mbar) when baked at up to (${\sim}200^{\circ}C$) over night. An electron field emission patterns, as well as current versus voltage characteristics and Fowler-Nordheim plots, are discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.919-922
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• 2004

The Field Emission Display is potentially an excellent display with high brightness and low power consumption with wide viewing angle but more work is still needed in order to identify the ideal electron emitter for such displays. This paper will review the work that we have carried out in Cambridge aver the past couple of years on optimisation of Carbon nanotubes for use as the cold cathode emitters that are possible candidates as the electron sources in second generation FEDs.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1277-1281
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• 2007

A Nano-tip as a cold field emitter for inducing a field emission current has manufactured in many ways. In the paper, the electrochemical etching method is used. Thus, in order to optimize the final shape as the field emitter, the reliable fabrication system for electrochemical etching was constructed. In addition, the effective parameters such as applied voltage, submerged length, meniscus height, electrolyte concentration and environmental condition(vibration, humidity, cut-off time) have investigated in detail. By controlling the parameters, reliable tungsten tip for field emitter was fabricated. And the fabricated tungsten tip was evaluated optically. Finally, the very sharp apex of the tungsten tip was observed with scanning electron microscope.

• 한국표면공학회지
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• 제34권5호
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• pp.448-454
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• 2001

Low field electron emission from novel carbon based cold cathodes is reported. The cathodes consisted of a layer of nanoseeded diamond and an over layer of nanocluster carbon films. The nanoseeded diamond was first coated on to thesubstrate. The nanocluster carbon films were then deposited on the nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. The heterostructured microcathodes were observed to exhibit electron emission currents of 1 $\mu$A/cm$^2$ at fields as low as 1.5 to 2V/$\mu$m. The effect of the nanoseeded diamond size and concentration and the properties of different nanocluster carbon films on emission characteristics is presented.

• Journal of Information Display
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• 제2권3호
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• pp.44-47
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• 2001

The extracted field emission current can be used to controllably heat microfabricated cold field emission cathode tips. The heating can be sufficient to smooth and recrystallize the tip surface by surface self-diffusion, and at least partially clean the surface of contaminants by thermal desorption. Self-heating not only allows for the achievement and maintenance of stable emission characteristics, but can be used to make the current-voltage characteristics of microfabricated field emitter tips nearly identical to one another. The resulting improvement in emission uniformity will allow for more reliable array operation at increased electron emission current densities.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.433-433
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• 2016

Carbon nanotubes (CNT) emitter has widely become an attractive mechanism that draws growing interests for cold cathode field emission. CNT yarns have demonstrated its potential as excellent field emitters. It was demonstrated that a small focal spot size was achieved by manipulating some electrical parameters, such as applied bias voltage at the mesh gate, and electrostatic focal lenses, geometrical parameters, such as axial distances of the anode, and the electrostatic focal lens from the cathode assembly, and the dimension of the opening of the electrostatic lens. Electrical-optics software was used to systematically investigate the behavior of the electron beam trajectory when the aforementioned variables were manipulated. The results of the experiment agree with the theoretical simulation results. Each variable has an individual effect on the electron beam focal spot size impinging on the target anode. An optimum condition of the parameters was obtained producing good quality of X-ray images. Also, MWCNT yarn was investigated for field emission characteristics and its contribution in the X-ray generation. The dry spinning method was used to fabricate MWCNT yarn from super MWCNTs, which was fabricated by MW-PECVD. The MWCNT yarn has a significant field emission capability in both diode and the triode X-ray generation structure compared to a MWCNT. The low-voltage-field emission of the MWCNT yarn can be attributed to the field enhancing effect of the yarn due to its shape and the contribution of the high-aspect-ratio nanotubes that protrude from the sides of the yarn. Observations of the use of filters on the development of X-ray images were also demonstrated. The amount of exposure time of the samples to the X-ray was also manipulated. The MWCNT yarn can be a good candidate for use in the low voltage field emission application of X-ray imaging.

• 한국진공학회지
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• 제16권6호
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• pp.414-423
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• 2007

FED(Field Emission Display)는 특히 소형, 고품질 평면화면분야에서 종래의 기술들과 뚜렷이 구별되는 이점을 가지고 있다. FED를 실리콘 웨이퍼에 System-on-Chip(SoC)화하는 가능성을 검토하기 위해, 우리는 p-n 접합을 평면 디스플레이의 전자선원(electron beam source)으로 사용할 수 있는지를 실험하였다. Cantilever(외팔보)형 게이트로부터의 전계로 반전층을 형성하여 p-n 접합을 형성하는 새로운 구조를 제조하였다. 약 1 ${\mu}m$ 정도의 높이에 있는 cantilever형 게이트에 220V이상의 전압을 가했을 때 반전층(inversion layer)이 형성되었고, 애벌런치 항복이성공적으로 이루어졌다. 극히 얕은 p-n 접합에서 애벌런치 항복 시 관측되는 전자방출 효과와 그 특성이 비교되었고 실험결과와 향후 연구방향이 논의 되었다.