• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Nuclear Engineering and Technology
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• v.53 no.7
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• pp.2364-2370
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• 2021

The ⁿMCP (Neutron sensitive microchannel plate) combined with advanced readout electronics is widely used in energy selective neutron imaging because of its good spatial and timing resolution. Neutron detection efficiency is a crucial parameter for the ⁿMCP. In this paper, a mathematical model based on the oblique cylindrical channel and elliptical pore was established to calculate the neutron absorption probability, the escape probability of charged particles and overall detection efficiency of ⁿMCP and analyze the effects of neutron incident position, pore diameter, wall thickness and bias angle. It was shown that when the doping concentration of the ⁿMCP was 10 mol%, the thickness of ⁿMCP was 0.6 mm, the detection efficiency could reach maximum value, about 24% for thermal neutrons if the pore diameter was 6 ㎛, the wall thickness was 2 ㎛ and the bias angle was 3 or 6°. The calculated results are of great significance for evaluating the detection efficiency of the ⁿMCP. In a subsequent companion paper, the mathematical model would be extended to the case of the spatial resolution and detection efficiency optimization of the coating ⁿMCP.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.639-643
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• 2021

In this study, fluorinated ethylene propylene (FEP) nanoparticle as an adhesive for fabricating a three-dimensional multilayered microfluidic device was studied. The formation of evenly distributed FEP nanoparticles layer with 3 ㎛ in thickness on substrates was achieved by simple spin coating of FEP dispersion solution at 1500 rpm for 30 s. It is confirmed that FEP nanoparticles transformed into a hydrophobic thin film after thermal treatment at 300 ℃ for 1 hour, and fabricated polyimide film-based microfluidic device using FEP nanoparticle was endured pressure up to 2250 psi. Finally, a three-dimensional multilayered microfluidic device composed of 16 microreactors, which are difficult to fabricate with conventional photolithography, was successfully realized by simple one-step alignment of FEP coated nine polyimide films. The developed three-dimensional multilayered microfluidic device has the potential to be a powerful tool such as high-throughput screening, mass production, parallelization, and large-scale microfluidic integration for various applications in chemistry and biology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.421-427
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• 2009

We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.34 no.3
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• pp.254-259
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• 2001

In order to make clear the resistance of plane nettings u,sed widely in constructing net cages, the resistance R taken by $R=kSU^2$, where S was the wall area of nettings, U the flow velocity, and k the resistance coefficient, was measured in a circulating water channel by using nylon Raschel nettings and PE trawler-knotted nettings coated with anti-fouling paint or not and then the properties of coefficient k were investigated. The mesh size L and the angle $\phi$ between two adjacent bars was given by the function of Reynolds number ${\lambda}U/v$ in the region of ${\lambda}U/v<180$, i. e., $$k=350(\frac{\lambda U}{v})^{-0.25}$$.where $\lambda$ was the representative size of nettings expressed as $$\lambda=\frac{{\pi}d^2}{2L\;sin\;2{\phi}}$$On the other hand, the coefficient k was almost fixed between 92 and 102 ($kg{\cdot}s^2/m^4$) in the region of ${\lambda}U/v{\geq}180$ and varied according to the ratio $S_n/S$ of the total area $S_n$ of nettings projected to the plane perpendicular to the water flow to the wall area S of nettings, i.e., it was given by $$k=98.6(\frac{S_n}{S})^{1.19}$$ regardless of the coating of paint.