• Title/Summary/Keyword: CoNbZr

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The Extraction of Metal Contaminants using Supercritical CO2 (초임계이산화탄소를 이용한 방사성 금속이온 추출)

  • Ju, Minsu;Kim, Jung-Hoon;Kang, Se-Sik
    • The Journal of the Korea Contents Association
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    • v.16 no.5
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    • pp.660-667
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    • 2016
  • Conventional decontamination methods utilize water-based systems, which generate high amounts of secondary wastes. Herein, we describe an environmentally benign decontamination method using liquid and supercritical $CO_2$. The use of $CO_2$ as a solvent affords effective waste reduction by its ability to be recycled, thereby leaving be hind only the contaminants upon its evaporation. In this study, a $CO_2$ solution process was assessed using t-salen(t-butylsalen), DC18C6 (dicyclohexano-18Crown6), 8-HQN(8-hydroxyquinoline), NEt4PFOSA(perfluoro-1-octanesulfonic acid tetra-ethyl ammonium salt), and NEt4PFOA(pentadecafluorooctanoic acid ammonium salt) to extract spiked radioactive contaminants(Nb,Zr,Co,Sr) from an inert sample matrix, namely filter paper. With the static extraction method, Sr was extracted with a maximum extraction rate of 97%, and Nb was extracted with a maximum extraction rate of 75%. Additionally, we were also able to extract Co and Zr with maximum extract ion ratesof 73% and 64%, respectively.

Influence of ZnO-Nb2O5 Substitution on Microwave Dielectric Properties of the ZrTi04 System

  • Kim, Woo-Sup;Kim, Joon-Hee;Kim, Jong-Han;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
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    • v.40 no.4
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    • pp.346-349
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    • 2003
  • Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

The effect of Thin Film magnet on soft magnetic thin film (박막자석이 연자성박막에 미치는 바이어스 효과)

  • Kim, Young-Hak;Shin, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.101-104
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    • 2003
  • The maximum coercive force of SmCo thin film was obtained at the Sm=28.2% and dc bias field was generated to CoZrNb, soft magnetic thin film, deposited on the SmCo thin film. DC field point having the maximum permeability for CoZrNb was shifted to higher dc field. DC field strength increased as the length of easy direction of magnetization decreased and 60Oe was measured for $3mm{\times}0.5mm$ sample.

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Magnetic Characteristics of CoNbZr amorphous Films with Pd addition

  • Song, J.S.;Wee, S.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.90-95
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    • 2003
  • The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.

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Fabrication and Properties of MI Sensor Device using CoZrNb Films (CoZrNb막을 이용한 MI센서 소자의 제작 및 특성)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;Sa-Gong, G.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.52-58
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    • 2004
  • Magneto-Impedance(MI) sensor is a highly sensitive sensor, which was able to detect a weak geomagnetic field. It also has a merit to be able to build in the low power system. In this study, their magnetic permeability and anisotropy field(H$\sub$k/) as a function of some different thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ respectively for 2 hours. Magnetic properties of films are measured by using a M-H loop tracer. Magnetic permeability of a film is measured over the frequency range from 1 ㎒ to 750㎒. By thickening a CoZrNb film relatively, magnetic permeability and impedance are examine to design the. MI sensor which drives at 50㎒, and thereof fabricated the MI sensor which drives at the 50㎒.

Fabrication and Properties of MI Sensor using CoZrNb films (CoZrNb 막을 이용한 MI센서 제작 및 특성)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;SaGong, G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.132-135
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    • 2002
  • MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field($H_{k}$) as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C$ respectively for 2 hours. Magnetic properties of film are measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range 1 MHz to 750MHz. And, it was examined on the permeability and impedance to design the MI sensor which acts at 50MHz by thickening a CoZrNb film relatively, and fabricated the MI sensor which acts at the 50MHz.

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Soft Magnetic Properties of CoNbZr amorphous Films with Pd addition

  • Song, J.S,;Wee, S.B,
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.54-58
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    • 2002
  • The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.

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Effects of Permalloy Multilayered Schemes and CoZrNb Intermediate Layer on Recording Characteristics of CoCr/NiFe Media (Permalloy 다층화와 CoZrNb 중간층이 CoCr/NiFe 매체의 기록특성에 미치는 영향)

  • 장평우;이택동;박관수
    • Journal of the Korean Magnetics Society
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    • v.4 no.1
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    • pp.20-24
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    • 1994
  • The read/write characteristics of CoCr/NiFe double layered media are strongly affected by the magnetic properties of NiFe magnetic soft layer as well as those of CoCr recording layer. Modification of the permalloy layer by NiFe/Ge multilayer scheme resulted in the higher recording sensitivity and the higher reproduced voltage of CoCr/NiFe medium and this is attributed to the higher permeability of the back layer and high perpendicular anisotropy of the CoCr recording layer. Although higher permeability of back layer results in higher recording sensitivity, the increment of the reproduced voltage was not remarkable, which can be confirmed in the FEM numerical analysis. On the contrary, peak shift characteristics of the CoCr/NiFe medium with the NiFe multi back layer was deteriorated compared to that of the CoCr/NiFe medium with NiFe single back layer. Insertion of ferromagnetic thin CoZrNb intermediate layer between CoCr and NiFe layer was effective to ensure large reproduced voltage and low peak shift. These recoridng characteristics were also discussed in connection with microstructural characteristics.

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