• Title/Summary/Keyword: CoFeB/MgO

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Properties of Spinel Ferrites for NTC Thermistor (NTC 서미스터용 스페넬 페라이트의 특성)

  • 오영우;허정섭;김현식;이승관
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.546-551
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    • 1998

  • $Mn{1-X}Fe{2+X}O_4, Mg_{1-X}Fe_{2+X}O_4$ (x=0.0, 0.025, 0.1, 0.2) for negative temperature coefficient (NTC) thermistor was prepared by calcination at $800^{\circ}C$ and sintering at form 1100 to $1250^{\circ}C$ with $50^{\circ}C$ intervals. The best linear property was obtained in the Mn-based sample sintered at $1200^{\circ}C$ with x=0.0 composition. Temperature coefficient of resistance, $\alpha$, was $-5.6%/^{\circ}C$ in the Mn-based sample, $-5.2%/^{\circ}C$ in the MM-based sample, and $-1.6%/^{\circ}C$ in the Mg-based sample. thermistor parameter, B, was in the range of 2665~7780 K. The results show the possibility that Mn-Ni-Co based thermistor could be substituted by the composition used in this study.

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Selective Etching of Magnetic Layer Using CO/$NH_3$ in an ICP Etching System

  • Park, J.Y.;Kang, S.K.;Jeon, M.H.;Yeom, G.Y.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.448-448
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    • 2010

  • Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

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Temperature Coefficient of Dielectric Constant in CaTiO3-A(B′, B″)O3 Microwave Dielectric Ceramics (A=Ca, La, Li, B′=Al, Fe, Mg, B″=Nb, Ta)

  • Kim, Jeong-Seog;Cheon, Chae-Il;Park, Chan-Sik;Byun, Jae-Dong
    • Journal of the Korean Ceramic Society
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    • v.40 no.10
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    • pp.925-930
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    • 2003

  • The dielectric polarizability-related factors contributing to the $\tau$$_{\varepsilon}$ have been analysed in terms of dielectric permittivity $\varepsilon$, Tolerance Factor (TF), and octahedron tilt angles in (1-x)CaTi $O_3$-x[A(B', B″) $O_3$] (A=Ca, La, Li, B'=Al, Fe, Mg, B″=Nb, Ta) and (S $r_{0.2}$C $a_{0.8}$)( $Ti_{1-x}$ Z $r_{x}$) $O_3$. All the compounds have the orthorhombic Pbnm structure except the end members A(B', B″) $O_3$ and the solid solutions of x$\geq$0.8. The additional dipole field effect is suggested as a dominant factor contributing to $\tau$$_{\varepsilon}$ in CaTi $O_3$-based ceramics having relatively large $\varepsilon$, which has not been generally considered in the previous reports dealing with the $\tau$$_{\varepsilon}$. This study has been focussed on delineating the dipole field effect on the $\tau$$_{\varepsilon}$ in comparison to the octahedron tilt effect in CaTi $O_3$-based ceramics.cs..cs.

  • https://doi.org/10.4191/KCERS.2003.40.10.925 인용 PDF KSCI