• Title/Summary/Keyword: Co-deposition

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Performance Behavior by H2 and CO as a Fuel in Intermediate Temperature Solid Oxide Fuel Cell (IT-SOFC) (중.저온형 고체산화물 연료전지에서 연료로 공급되는 CO 와 H2 가 성능에 미치는 영향)

  • Park, Kwang-Jin;Bae, Joong-Myeon
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.32 no.12
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    • pp.963-969
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    • 2008
  • The performance behavior of solid oxide fuel cell using $H_2$ and CO as fuels was investigated. The power densities and impedance results showed a little variation as the ratio of $H_2$ and CO changed. However, when the pure CO was used as a fuel, area specific resistance (ASR), especially low frequency region, was increased. This might be due to carbon deposition on anode. The maximum power density was 60% lower using CO than using $H_2$. Carbon deposition reduced after constant current was applied. The SOFC performance was recovered from the carbon deposition after applying constant current during 100h.

Low temperature deposition of carbon nanofilaments using vacuum-sublimated $Fe(CO)_5$ catalyst with thermal chemical vapor deposition

  • Kim, Nam-Seok;Kim, Kwang-Duk;Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.1
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    • pp.18-22
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    • 2007
  • Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.

A Study on Characteristics of Borophosphosilicate Gloss deposited by At.ospheri, Pressure Chemical Vapor Deposition (APCVD에 의란 BPSG 막질특성에 관란 연구)

  • Kim, Eui-Song;Lee, Chul-Jin;Rhieu, Ji-Hyo;Song, Sung-Hae
    • Proceedings of the KIEE Conference
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    • 1987.07a
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    • pp.561-564
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    • 1987
  • The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

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Optimizing the Cobalt Deposition Condition using the Experiment Design (실험계획법을 이용한 대구경용 코발트 박막의 스퍼터 조건 최적화)

  • Seong, Hwee-Cheong;Song, Oh-Sung
    • Journal of the Korean Magnetics Society
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    • v.12 no.6
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    • pp.224-230
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    • 2002
  • The statistical experiment method is employed to optimize the deposition condition of Co film with DC magnetron sputtering process. The statistical treatment results showed the significance value below 0.05, low RMS error and R-sq value close to 1, which implied that our experiment and design were very reliable. We found that the sheet resistance decreased to -1.83Ω/$\square$ with the deposition temperature, increased to 11.17Ω/$\square$ with the deposition pressure, and decreased into -0.65Ω/$\square$ with the DC power. We also confirmed that the sheet resistance uniformity was mainly influenced by the deposition temperature as it decreased -4.04% at the temperature range of 25$\^{C}$∼147$\^{C}$. Finally, we report that the optimum condition of Co film using our statistical method of design of experiment is the deposition temperature of 25$\^{C}$, the deposition pressure of 12mTorr, and the DC power of 1500W.

Codoped ZnO films by a co-spray deposition technique for photovoltaic applications

  • Zhou, Bin;Han, Xiaofei;Tao, Meng
    • Advances in Energy Research
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    • v.2 no.2
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    • pp.97-104
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    • 2014
  • A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

The Characteristics of Plasma Polymerized Carbon Hardmask Film Prepared by Plasma Deposition Systems with the Variation of Temperature

  • Yang, J.;Ban, W.;Kim, S.;Kim, J.;Park, K.;Hur, G.;Jung, D.;Lee, J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.381.1-381.1
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    • 2014
  • In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

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Characteristics of pentacene transistor using Organic Flow Deposition (OFD) equipment

  • Jung, Ki-Taek;An, Young-Ung;Ji, Jong-Yeoul;Choi, Jun-Young;Lee, Young-Jong;Han, Seung-Hoon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1611-1614
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    • 2007
  • This paper is concerned on design of organic flow deposition system and development of the deposition process for pentacene thin film by OFD and on electrical characteristics of pentacene films deposited by it. OFD will overcome vacuum thermal evaporator's limits and it will provide a large-scale mass, uniform and good electrical performance.

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Flux of Carbon Dioxide and Deposition Velocity of Ozone over Glycine max Canopy (대두 개체군에 있어서 $CO_2$$O_3$ 플럭스)

  • 김원식;이호준
    • The Korean Journal of Ecology
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    • v.23 no.1
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    • pp.39-43
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    • 2000
  • Carbon dioxide (CO₂) and ozone (O₃) fluxes were measured over Glycine max canopy using the bowen ratio energy balance method at Fuchu - 20 km west of Tokyo, in late July and late September 1996. The CO₂, and O₃, fluxes were influenced by variation in leaf area index (LAI) during the measuring period. When LAI was more than 3.0, the CO₂ flux was found to be positively correlated with photosynthetically active radiation (PAR). The O₃, flux was always positive with an average deposition velocity for this case of about 0.5 mol m/sup -2/s/sup -1/. A positive correlation existed between the deposition velocity of O₃ and CO₂ during the period of LAI>2.0.

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Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor (Co(EtCp)2프리커서를 사용한 Co 박막의 선택적 원자층 증착)

  • Sujeong Kim;Yong Tae Kim;Jaeyeong Heo
    • Korean Journal of Materials Research
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    • v.34 no.3
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    • pp.163-169
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    • 2024
  • As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO2 hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO2 composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)2 precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO2 substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

The Comparison to Physical Properties of Large Size Indium Zinc Oxide Transparent Conductive Layer (대면적 상온 Indium Zinc Oxide 투명 도전막의 물성 특성 비교)

  • Joung, Dae-Young;Lee, Young-Joon;Park, Joon-Yong;Yi, Jun-Sin
    • Journal of the Korean institute of surface engineering
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    • v.41 no.1
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    • pp.6-11
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    • 2008
  • An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.