• Nuclear Engineering and Technology
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• v.34 no.4
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• pp.323-330
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• 2002

Various types of compounds were tested with the aspects of decomposition and formation of residue in a $CO_2$ or 7H$_2$+93$N_2$ atmosphere. The evaporation temperature range of each compound was determined from thermogravimetric curve. Decomposition of dicarbon amide, stearic acid, acrowax and zinc stearate was studied by thermogravimetry in $CO_2$ or in 7H$_2$+93$N_2$ atmosphere. All compounds were decomposed in $CO_2$ atmosphere at lower than 40$0^{\circ}C$, but the residue, ZnO remained for zinc stearate. ZnO did not decompose in $CO_2$ atmosphere up to 130$0^{\circ}C$, but reduced into Zn metal and disappeared in the temperature range of $600^{\circ}C$ to 120$0^{\circ}C$ in 7H$_2$+93$N_2$ atmosphere. The effect of residue, which trapped in closed pores of sintered pellet, on the thermal stability was studied using the resintering test at 1$700^{\circ}C$ in 7H$_2$+93$N_2$ atmosphere. In the case of oxidative sintered pellet with admixing zinc stearate, the cavity formation accompanied with a density drop after resintering is due to the pressure of the Zn gases trapped in the isolated pores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.101-104
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• 1998

A new planar-type micro gas sensor was designed and fabricated on silicon substrate and the operating characteristics of the sensor were investigated. The thin sensitive film of the sensor was fabricated by spin-coating of the SnO$_2$ sol solution which was synthesized by hydrothermal method. The spin-coating method for preparation of sensing layer was adopted to improve the long-term stability of the fabricated sensing film instead of physical methods such as rf sputtering and thermal evaporation. The fabricated microsensor showed a fairly good sensing performance for CO gas in air at 250$^{\circ}C$ The sensitivity(S=Ra/Rg) was shown to be about 5 to 2000ppm CO with heating power of 50mW.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1311-1314
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• 2008

We have developed new electrical dopants of rhenium oxide ($ReO_3$) and cupper iodide (CuI) as p-dopants and rubidium carbonate ($Rb_2CO_3$) as an n-dopant, respectively. $ReO_3$ has advantage of low temperature evaporation (about $300^{\circ}C$) with enhanced device stability. Various kinds of high performance organic light emitting diodes have been realized, including bottom emission, tandem, and top-emission OLEDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.411-413
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• 2003

When manufacturing large sized OLED devices, the evaporation source is the most important technology. The nozzle source maintains the uniformity of the large-size deposited organic thin film at the 2-3% level and its usage is only 0.8 gram/hour. The in-line manufacturing deposition system combining with an encapsulation system is proposed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.35-40
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• 1981

Thin films of SnO2, SnO2-ZnO and ZnO were prepared by the spray. chemical vapor deposition and vacuum evaporation method. They had good sensitivity to various gases involving toxic gases(i. e. SO2, CO). The change in conductivity of thin film guts sensors prepared was considered as the change in carrier concentration caused by gas absorption. And also the conductivity of the thin film elements had great dependence on atmospheric pressuie around them.

• Journal of ILASS-Korea
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• v.11 no.1
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• pp.30-38
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• 2006

High temperature furnaces such as power plant and incinerator contribute considerable part of NOx generation and face urgent demand of De-NOx system. Reducing agent is injected into the flue gas flow to activate do-NOx system. Almost SCR system adopt vaporized ammonia injection system. Vaporizer, dilution system and additional space are needed to gasify and inject ammonia. Liquid spray injection system can simplify and economize post-treatment system of flue gas. In this study, mixing caused by gas or liquid injection of reducing agent into flue gas duct was investigated experimentally. Carbonated water was used as tracer and simulated agent and mixing of liquid spray in a duct flow was studied. To achieve that, the angle of attack of static mixer is simulated and $CO_2$ concentration is measured.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1418-1421
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• 2009

A series of new light-emitting random copolymers with fully conjugated structure was prepared, for the first time through the well-known Gilch polymerization between 1,4-bis(chloromethyl)-2-ethylhexyloxy-5-methoxybenzene and 2,5-bis(bromomethyl)thiophene monomers in different ratios. The synthesized polymers (on thin film) showed the maximum wavelength of UV-visible absorbance and photoluminescence (PL) near 500 nm and near 600 nm, respectively. A single-layer light-emitting diode device, which has a simple ITO (indium-tin oxide)/polymer/Al configuration, was fabricated by spin-coating of polymers and then vacuum evaporation of Al metal. The threshold bias of PMEHPVTVs was in the range of 3.5-10 V. As in the PL spectra, the maximum wavelength of light emission near 600 nm was also shown in electroluminescence (EL) spectra of PMEHPVTVs when the operating voltage was about 7 - 14 V.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.234-237
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• 2002

The cobalt silicide was formed OH POly-Si/SiO$_2$/Si Substrates by the E-beam evaporation of Co metal and rapid thermal annealing method for the application of heating actuators. The most stable CoSi$_2$crystal was obtained at temperature of above $700^{\circ}C$ for 20 sec in $N_2$ambient. From the SEM observation, the thickness and diameter of the heating elements were about $1{\mu}{\textrm}{m}$ and $50{\mu}{\textrm}{m}$, respectively. Temperature resistance coefficient of heating elements was found to be about 0.0014($1/^{\circ}C$) with $30~35\Omega$ of resistance.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.73-73
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• 2007

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.