• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1248-1254
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.71-75
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• 한국산업융합학회 논문집
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• 제25권6_2호
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• pp.1037-1045
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• 2022

In this study, nanoscale Al₂O3 ceramic particles were used due its exceptionally high hardness characteristics, chemical stability, and wear resistance properties. These nanoparticles will be used to investigate the optimal process conditions for the electro co-deposition of the Ni-Al₂O₃ composite coatings. A Watts bath electrolytic solution of a controlled composition along with a fixed agitation speed was used for this study. Whereas the current density, the pH value, temperature and concentration of the nano Al₂O₃ particles of the electrolyte were designated as the manipulative variables. The experimental design method was based on the orthogonal array to find the optimum processing parameters for the electro co-deposition of Ni-Al₂O₃ composite coatings. The result of confirmation experimental based on the optimal processing condition through the analysis of variance ; EDX analysis found that the ratio of alumina increased to 8.65 wt.% and subsequently the overall hardness increased to 983 Hv. Specially, alumina were evenly distributed on Nickel matrix and particles were embedded more firmly and finely in Nickel matrix.

• 한국표면공학회지
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• 제29권5호
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• pp.430-436
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• 1996

We have grown superconducting thin films on various substrates using a pulsed laser deposition (PLD) method. $YBa_2Cu_3O_7-\delta$ (YBCO) superconducting thin films with the superconducting transition temperature ($T_{c. offset}$) of 87K were grown on Si substrates using yittria-stabilized zirconia (YSZ) and $CeO_2$ double buffer layers. We have developed a large area pulsed laser deposition system. The system was designed to deposit up to 6 different materials on a large area substrate up to 7.5cm in diameter without breaking a vacuum. The preliminary runs of the deposition of YBCO superconducting thin films on $SrTiO_3$ substrate using this system showed a very uniform thickness profile over the entire substrate holder area. $T_{c}$ of the deposited YBCO thin film, however, was scattered depending on the position and the highest value was 85K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• Bulletin of the Korean Chemical Society
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• 제30권5호
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• pp.1085-1087
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• 2009

Bare metal stents which were used to treat coronary artery disease have several biochemical problems. Polymerbased drug-eluting stents (DES) have opened up a new paradigm in the treatment of in-stent restenosis. Many studies and research programmes have proved that DES can prevent restenosis. In our study, paclitaxel-loaded poly (lactic-co-glycolic acid) (PLGA) nanoparticles have been deposited along the three dimensional scaffold of coronary stents by a method using self-assembling properties of colloidal particles. We found that the nanoparticles were deposited uniformly and closely packed. The amount of paclitaxel was easily controlled by the drug content of the nanoparticles and the deposition count.

• 한국재료학회지
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• 제9권3호
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• pp.274-281
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• 1999

합금박막형 자기기록매체의 제작방법은 스퍼터링과 무전해 도금방법이 주로 이용되고 있으며, 미국이나 일본 등에서는 스퍼터링 방법에 비하여 대량생산이 용이하고, 도금조건에 따라 다양한 특성의 합금박막을 제조할 수 있는 무전해 도금방법을 이용한 합금자성박막에 대하여 많은 연구를 하고 있지만 국내에서는 이에 관한 연구가 매우 미약한 실정이다. 따라서 이 연구에서는 차아인산이수소나트륨을 환원제로 사용한 무전해 도금법을 이용하여 corning glass 2948 유리기판 위에 Co-Mn-P 도금층은 석출전위에 따라 산성에서 석출되지 않고 알칼리성에서만 환원석출반응에 의해 형성되었으며, 석출속도는 pH와 온도가 증가할수록 상승하여 pH10, 온도 $80^{\circ}C$일 때 가장 우수하였다. 자기적 특성은 pH9, 온도 $70^{\circ}C$일 때 보자력 870Oe, 각형비 0.78로 가장 우수하였으며, 이 때, Co-P 도금층의 인(P)의 함량은 2.54%，두께는 $0.216\mu\textrm{m}$였다. 결정배향은 $\beta$-Co의 Fcc는 발견되지 않았고, $\alpha$-Co의 hcp(1010), (0002), (1011)방향의 결정배향을확인할 수 있었으며, (1010), (1011)방향이 우선 배향한 것으로 보아 수평자기벡터를 형성함을 확인할 수 있었다. 무전해 Co-Mn-P 도금층은 Co-P 도금층에 비해 보자력의 경우 100Oe 정도 증가하였지만, 각형비에 있어서는 큰 변화가 없었고, 결정배향 또는 Co-P 도금층과 마찬가지로 $\alpha$-Co (1010), (1011)방향이 우선 배향하여 수평자기벡터를 형성함을 확인할 수 있었다.2년경에 판매되는 단말기의 80%정도는 멀티모드타입 단말기일 것으로 예측되는 점, 그리고 금년말까지 100개 회사 이상이 SDR 포럼 멤버로 가입할 것으로 예측되는 점, 무선 인터넷 폭발적인 성장으로 복합 멀티미디어 단말기 시대가 다가오는 점 등으로 미루어 볼 때, 고객의 서비스 가치선택에 역점을 둔 기술을 중시해야 한다는 점에서 더욱 설득력을 지닌다. 따라서 이 같은 목적과 3세대 이동통신 및 인터넷 사용자의 증가, 반도체기술의 발전에 힘입어, 과거 군용 시스템에서 이용되던 SWR 기술을 상용시스템 특히 3세대 이동통신에 적용하려는 연구가 활발히 진행되고 있다. '96년 SDR 포럼이 결성되었는데, 목적은 휴대형 장치(hand-held devices), 기지국(base stations), 차량형 장치(mobile stations)를 포함하는 다중모드(multi-mode), 다중대역(multi-band) SDR을 위한 개방형 구조의 표준을 정하기 위함이다. 이 같이 public forum에 의한 표준(open architecture standard)이 정해지면 그 다음은 이를 어떻게 구현할 것인가가 문제가 될 것이다. 본고에서는 먼저 SDR 단말기 요구사항을 살펴보고, 이 요구사항들을 만족하는 SDR 단말기 구조, SDR 계층참조 모델, 그리고 기존의 단말기 구조와 SDR 계층참조 모델의 연관관계에 대해 살펴보고, 크게 두가지 종류의 단말기 즉 사용 SDR 단말기와 군용 SDR 단말기에 대해 살펴보고, 설계 절차 및 현재 시점에서 단말기 구현을 위해 해결해야 하는 기술적 과제를 살펴보고 결론을 언급한다.a^{2+}$ 통로를 자극함으로써 세포바깥의 $Ca^{2+}$이 세포안으로 이동하여 나타나는 변화로 생각된다.축력의 차이로부터 기인한다고