• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.321-322
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• 2007

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.97-97
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• 2000

In this thesis, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using Microwave Plasma Enhanced Chemical Vapor deposition (MWPCVD) method. Effects of each experimental parameters of MWPCVD including methane concentrations, oxygen additions, operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases respectively. As a methane concentration below 4%, the deposited films having well-defined facets could be obtained. As the methane concentration increases over 4%, the shape of films gradually changed into a amorphos form. The best crystallinity of the film at 3% in the Raman spectroscopy. Addition of oxygen to the methane-hydrogen mixture gave an improved film crystallinity at 50% oxygen concentration due to its more effectiveness in the selective removal of the non-diamond phased compared to the of H atom. on the contrary, the growth rate generally decreased by oxygen to from the more stable CO and CO2 is responsible for such an effect. Upon increasing the operating pressure and time, increased of growth rate and crystallinity were increased simultaneously.

• 한국표면공학회지
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• 제26권4호
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• pp.192-202
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• 1993

The characteristics of the high-performance ceramic coatings fabricated on the optimum processings con-ditions for the atmospheric plasma spraying are evaluated by various material tests and analyses. The opti-mum processing parameters for the plasma spraying are determined by using the two-level orthogonal arrays of fractional factorial testing method as a statistical approach. Material tests for the coating specimens are carried out to evaluate microstructure, hardness, adhesion strength, and deposition efficiency. The properties of Al2O3-13%TiO2 coating are discussed with regard to the effective processings parameters. The decarburization effects of WC-12%Co coating is examined by XRD analysis in terms of the arc power and the secondary gas species. The hardness of Al2O2-13%TiO2 coating is increased with the arc power and shows the maximum value at around 40 lpm of Ar gas flowrate, which appears to be the most critical parame-ter on the deposition efficiency. For reducing the decarburization of WC-12%Co coating, the injection of inert He gas instead of reactive H2 gas as a secondary gas is more effective than the dropping of arc power to lessen the plasma enthalpy.

• 한국분말재료학회지
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• 제26권4호
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• pp.319-326
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• 2019

Additive manufacturing (AM) is a highly innovative method for joining dissimilar materials for industrial applications. In the present work, AM of STS630 and Ti-6Al-4V powder alloys on medium entropy alloys (MEAs) NiCrCo and NiCrCoMn is studied. The STS630 and Ti64 powders are deposited on the MEAs. Joint delamination and cracks are observed after the deposition of Ti64 on the MEAs, whereas the deposition of STS630 on the MEAs is successful, without any cracks and joint delamination. The microstructure around the fusion zone interface is characterized by scanning electron microscopy and X-ray diffraction. Intermetallic compounds are formed at the interfacial regions of MEA-Ti64 samples. In addition, Vicker's hardness value increased dramatically at the joint interface between MEAs and Ti-6Al-4V compared to that between MEAs and STS630. This result is attributed to the brittle nature of the joint, which can lead to a decrease in the joint strength.

• 한국재료학회지
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• 제10권1호
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• pp.97-106
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• 2000

본 연구에서는 NaH$_2$PO$_2$$H_2O$ (차아인산이수소나트륨)을 환원제로 사용한 무전해 도금법을 이용하여 corning glass 2948 유리기판 위에 Co-W-P 도금층을 제조할 때, pH 및 온도에 따른 석출속도, 합금조성 및 미세구조와 자기적 특성을 고찰하였다. 무전해 Co-P 도금층은 석출전위에 따라 산성에서 석출되지 않고 알칼리성에서만 환원석출반응에 의해 형성되었으며, 석출속도는 pH와 온도가 증가할수록 상승하여 pH 10, 온도 8$0^{\circ}C$일 때 가장 우수하였다. 자기적 특성은 pH 9, 온도 7$0^{\circ}C$일 때 보자력 870Oe, 각형비 0.78로 가장 우수하였으며, 이때, Co-P 도금층의 인(P)의 함량은 2.54%, 두께는 0.216$\mu\textrm{m}$였다. 결정배향은 $\beta$-Co의 fcc는 발견되지 않았고, $\alpha$-Co의 hcp(1010), (0002), (1011) 방향의 결정배향을 확인할 수 있었으며, (1010), (1011) 방향이 우선 배향한 것으로 보아 수평자기벡터를 형성함을 확인할 수 있었다. 무전해 Co-W-P 도금층의 경우는 자기적 특성에서 보자력은 500Oe, 각형비는 0.6 정도의 경향을 보였지만, 결정배향에 있어서는 $\alpha$-Co (0002) 방향으로 우선 배향하여 수직자화벡터를 형성함을 확인할 수 있었으며, 합금조성에 있어 인(P)의 함량은 0.8$\pm$0.2%로 일정하였고, W의 석출량은 $Na_2$WO$_4$의 농도가 증가할수록 증가하여 0.1mol/L일 때 20%이였다. 수소가스를 이용한 환원분위기에서 10$0^{\circ}C$간격으로 1시간씩 40$0^{\circ}C$까지 열처리에 따른 자기적 특성과 미세구조의 변화를 확인하여 본 결과 Co-W-P는 열처리에 따라 표면의 평활도는 향상되었지만, 자기적 특성과 미세구조에는 아무런 변화가 없었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.58-58
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• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• 한국자기학회지
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• 제16권2호
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• pp.140-143
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• 2006

단결정 상태의 $CoFe_2O_4$ 박막을 rf magnetron sputtering 증착법을 이용하여 (100) MgO 기판 위에 성장시켰다. X선 회절기, Rutherford back-scattering 분석기와 고감도 주사전자현미경을 이용하여 측정한 결과 증착된 박막이 기판과 잘 정렬되어 성장한 것을 확인할 수 있었다. $600^{\circ}C$의 기판 온도에서 성장한 페라이트 박막은 약 200nm크기의 사각형 형태로 규칙적으로 분포되어 있음이 관찰되었다. 그러나 $700^{\circ}C$의 기판 온도에서 성장한 박막은 불규칙한 모양으로 이루어져 있었으며 30nm에서 150nm에 이르는 다양한 입자 크기를 보이고 있었다. 섭동자화기를 이용한 자기이력곡선 측정 결과 성장한 박막의 자화용이축이 기판과 수직하게 배열하는 것을 알 수 있었다. 또한 MgO 기판과 성장 박막과의 격자상수 차이로 인하여 기판과 수직한 방향의 보자력은 매우 큰 값을 나타내었다. 즉 평행한 방향의 보자력은 283 Oe이고 수직한 방향의 보자력은 6800 Oe였다. $700^{\circ}C$의 기판 온도에 서 성장한 페라이트 박막은 $600^{\circ}C$의 기판 온도에서 성장한 박막의 보자력 및 포화자화 값과 유사한 값을 보였으나 각형비는 급격하게 감소하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.83-84
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• 2009

Thin film solar cells based on CIGS continue to be a leading candidate for thin film photovoltaic devices due to their appropriate bandgap, long-term stability, and low-cost production. To date, the most successful technique for the deposition of a CIGS absorber layer has been based on the co-evaporation However, the evaporation process is difficult to scale-up for large-area manufacturing the sputtering and Selenizaton process has been a promising method for low-cost and large-scale production of high quality CIGS In this study, we have used Cu and CuIn alloy targets for precursor deposition the precursor deposited by sputtering Cu and CuIn targets and $CuInSe_2$ thin film is manufactured by Selenization process

• Applied Science and Convergence Technology
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• 제25권2호
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• pp.32-35
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• 2016

Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

• 한국세라믹학회지
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• 제43권11호
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.