• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.244-248
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• 1994

Magnetic and Magneto-optical characteristics of NdTbFeCo alloy films and NdTbFeCo/TbFeCo double-layered films have been investigated. It was observed that the Kerr rotation(${\theta}_{k}$) in the short wavelength region increased and the coercivity decreased as the substitutional amount of Nd for Tb in NdTbFeCo film at the constant FeCo content. In spite of the increased ${\theta}_{k}$, a small coercivity of NdTbFeCo film made this medium unsuitable for magneto-optical recording medium at short wavelength. An effort was made to improve coercivity by exchange coupling with TbFeCo film of high coercivity. In the exchange-coupled $Nd_{16.9}Tb_{15.2}Fe_{50.4}Co_{17.5}(150\;{\AA})/Tb_{21.1}Fe_{65.0}Co_{13.9}(300\;{\AA})$ double-layered film, the magnetization reversal switching field and the Kerr rotation angle were increased to about 6.0 KOe and $0.32^{\circ}$ at 500 nm, respectively. This result indicates that exchange-coupled NdTbFeCo/TbFeCo film can be a promising candidate for agneta-optical rerding medium short wavelenhth.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.22-26
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• 2008

Formation of protective iron carbonate films in $CO_2$ corrosion can reduce corrosion rate substantially and the effects have been incorporated in various prediction models. The $CO_2$ corrosion with the presence of free acetic acid is known to increase corrosion rate below scaling temperature. The possible interaction between the formation of iron acetate and iron carbonate films can affect the protectiveness of the film. The study is done using 3% NaCl solution under stagnant $CO_2$ -saturated condition at the scaling temperatures at various pH values and HAC concentrations. The result show that the presence of HAc does not affect the formation of protective iron carbonate film but delays the attainment of protective iron carbonate due to a possibility of solubilising of ferrous ions and thinning of the films.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.3
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• pp.305-310
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• 2014

This study examined the morphological changes in lithium surface immersed in 1mol $dm^{-3}$ (M) $LiPF_6 $ dissolved in propylene carbonate (PC) containing different 1,2-dimethoxyethane (DME) concentrations as a co-solvent. A passivation film was formed on the surface of lithium metal by electrolyte decomposition. The passivation film formation reactions were significantly affected by the amount of co-solvent, DME, in electrolyte solution. A stable film was obtained from the 1 M $LiPF_6 $ / PC:DME (67:33) solution in which lithium electrode showed good electrochemical performances. Atomic force microscope (AFM) and electrochemical impedance spectroscopy (EIS) results revealed that there were no direct correlations between changes in the surface morphology of lithium metal and the resistance behavior of its passivation film.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.198-203
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• 2003

To investigate whether the use of hard magnetic film is available to generate bias magnetic field for a magnetoimpedance sensor, the magnetic properties of SmCo hard magnetic films were investigated as a function of their compositions. The saturation magnetization decreased with Sm content increasing in SmCo films. And, the coercive force increased in the extent of Sm content of 28 at%, but decreased as Sm content increased moreover. The bias field effect of SmCo film to amorphous CoZrNb film was investigated with the magnetization corves, permeabilities, and magnetic domain structures of SmCo/CoZrNb multilayers. The bias field of about 60 Oe was observed in the film with 3 mm ${\times}$ 0.5 mm, which can be constructed as a MI sensor, and this result strongly indicates that the bias field generated from a hard magnetic film is adequate to enhance the sensitivity of a MI sensor with hard/soft magnetic multilayer structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.333-336
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• 2006

High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.117-123
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• 1992

$Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.700-702
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• 2005

A 5.0-inch transmissive type plastic TFT arrays were successfully fabricated on a plastic substrate at the resolution of $400{\times}3{\times}300$ lines (100ppi). All of the TFT processes were carried out below $150^{\circ}C$ on PES plastic films. After thin film deposition using PECVD, thin film failures such as film delamination and cracking often occurred. For successful growth of thin films (about 1um) without their failures, it is necessary to solve the critical problem related to the internal compressive stress (some GPa) leading to delamination at a threshold thickness value of the films. The Griffith's theory explains the failure process by looking at the excess of elastic energy inside the film, which overcomes the cohesive energy between film and substrate. To increase the above mentioned threshold thickness value there are two possibilities: (i) the improvement of the interface adhesion (for example, through surface micro-roughening and/or surface activation), and (ii) the reduction of the internal stress. In this work, reducing a-Si layer film thickness and optimizing a barrier SiNx layer have produced stable CVD films at 150oC, over PES substrates

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1255-1258
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• 2010

In this paper, the $CoSi_2$ thin films with thicknesses of about $5{\mu}m$ were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a $CoSi_2$ target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of $100^{\circ}C$, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of $1\times10^{-6}$ Torr. The annealing treatments of the $CoSi_2$ thin film were performed from 500, 700 and $900^{\circ}C$ for 1h in air ambient by an electric furnace. In order to investigate the $CoSi_2$ thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the $CoSi_2$ thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).