• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.20-24
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• 2017

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.

• Carbon letters
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• 제16권1호
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• pp.57-61
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• 2015

Carbon aerogel is a porous carbon material possessing high porosity and high specific surface area. Nitrogen doping reduced the specific surface area and micropores, but it furnished basic sites to improve the $CO_2$ selectivity. In this work, N-doped carbon aerogels were prepared with different ratios of resorcinol/melamine by using the sol-gel method. The morphological properties were characterized by scanning electron microscopy (SEM). Nitrogen content was studied by X-ray photoelectron spectroscopy (XPS) and the specific surface area and micropore volume were analyzed by $N_2$ adsorption-desorption isotherms at 77 K. The $CO_2$ adsorption capacity was investigated by $CO_2$ adsorption-desorption isotherms at 298 K and 1 bar. Melamine containing N-doped CAs showed a high nitrogen content (5.54 wt.%). The prepared N-doped CAs exhibited a high $CO_2$ capture capacity of 118.77 mg/g (at resorcinol/melamine = 1:0.3). Therefore, we confirmed that the $CO_2$ adsorption capacity was strongly affected by the nitrogen moieties.

• 센서학회지
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• 제28권5호
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• pp.271-276
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• 2019

Pure and 0.5, 1, 2, 5, and 10 at% of Mo-doped $Co_3O_4$ yolk-shell spheres were synthesized by ultrasonic spray pyrolysis of droplets containing Co nitrate, ammonium molybdate, and sucrose and their gas sensing characteristics to 5 ppm trimethylamine (TMA), ethanol, p-xylene, toluene, ammonia, carbon monoxide, and benzene were measured at $225-325^{\circ}C$. The sensor using pure $Co_3O_4$ yolk-shell spheres showed the highest response to p-xylene and very low response to TMA at $250^{\circ}C$, while the doping of Mo into $Co_3O_4$ tended to increase the overall responses of gas sensors. In particular, the sensor using 5 at% Mo-doped $Co_3O_4$ yolk-shell spheres exhibited the high response to TMA with low cross-responses to other interfering gases. The high response and selectivity of Mo-doped $Co_3O_4$ yolk-shell spheres to TMA are attributed to the electronic sensitization by higher valent Mo doping and acid-base interaction between TMA and Mo components.

• 한국세라믹학회지
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• 제45권3호
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• pp.167-171
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• 2008

Zirconium-doped $Li_{1.1}Co_{1-x}Zr_xO_2(0{\leq}x{\leq}0.05)$ powders as cathode materials for lithium ion batteries were synthesized using an ultrasonic spray pyrolysis method. Cyclic voltammetry and cyclic stability tests were performed, and the changes of microstructure were observed. The solubility limit of zirconium into $Li_{1.1}CoO_2$ was less than 5 mol%, and monoclinic $Li_2ZrO_3$ phase was formed above the limit. The Zr-doping suppressed the grain growth and increased the lattice parameters of the hexagonal $LiCoO_2$ phase. The Zr-dopiong of 1mol% resulted in the best cyclic performance in the range of $3.0{\sim}4.3V$ at 1C rate (140 mA/g); the initial discharge capacity decreased from 158 mAh/g to 60 mAh/g in the undoped powder, while from 154 mAh/g to 135 mAh/g in the Zr-doped powder of 1 mol% after 30 cycles. The excellent cycle stability of Zr-doped powder was due to the low polarization during chargedischarge processes which resulted from the delayed collapse of the crystal structure of the active materials with Zr-doping.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Korean Chemical Engineering Research
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• 제55권6호
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• pp.861-867
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• 2017

니켈 함량이 높은 리튬이차전지용 NCA 양극소재의 용량 및 수명특성을 향상시키기 위하여 붕소와 코발트를 상업용 $Li_{1.06}Ni_{0.91}Co_{0.08}Al_{0.01}O_2$ (NCA)에 도핑하여 리튬이차전지의 양극소재로 사용하였다. 상업용 NCA 양극소재는 약 $5{\mu}m$와 $12{\mu}m$ 크기의 2차 입자들이 혼합되어 있고 붕소와 코발트 도핑후 입자크기는 조금 감소되었다. 붕소와 코발트를 도핑한 NCA-B와 NCA-Co의 초기 방전용량은 각각 214 mAh/g과 200 mAh/g으로 도핑하지 않은 NCA에 비해 높게 나타났으며, 특히 NCA-Co는 20번째의 방전용량이 157 mAh/g으로 가장 우수한 방전용량특성을 나타내었다. 이는 코발트를 도핑함으로써 c축 방향으로의 결정이 성장되어 리튬이온의 확산이 용이하기 때문이다.

• 한국세라믹학회지
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• 제31권8호
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• pp.920-926
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• 1994

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

• Bulletin of the Korean Chemical Society
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• 제33권6호
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• pp.1993-1997
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• 2012

Mg-doped ZnO one-dimensional (1D) nanostrutures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Mg-doped ZnO nanostructures functionalized with Pt to CO gas at $100^{\circ}C$ were examined. The diameters of the 1D nanostructures ranged from 80 to 120 nm and that the lengths were up to a few tens of micrometers. The gas sensors fabricated from multiple networked Mg-doped ZnO nanowires functionalized with Pt showed enhanced electrical response to CO gas. The responses of the nanowires were improved by approximately 70, 69, 111, and 81 times at CO concentrations of 10, 25, 50, and 100 ppm, respectively. Both the response and recovery times of the nanowire sensor for CO gas sensing were not nearly changed by Pt functionalization. It also appeared that the Mg doping concentration did not influence the sensing properties of ZnO nanowires as strongly as Pt-functionalization. In addition, the mechanism for the enhancement in the CO gas sensing properties of Mg-doped ZnO nanowires by Pt functionalization is discussed.