• The Journal of the Petrological Society of Korea
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• v.28 no.1
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• pp.1-13
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• 2019

The characteristics of the rock cleavage of Jurassic Geochang granite were analysed using the parameters from the length and spacing-cumulative frequency diagrams. The evaluation for three planes and three rock cleavages was performed using the 25 parameters such as (1~2) slope angle(${\alpha}^{\circ}$and ${\beta}^{\circ}$), (3) intersection angle(${\alpha}-{\beta}^{\circ}$), (4) exponent difference(${\lambda}_S-{\lambda}_L$), (5~12) length of line(oa, ob, ol, os, ss', ll' and sl') and (13~15) length ratio(ol/os, ss'/ll' and ll'/sl'), (16) mean length((ss'+ll')/2), (17~23) area (${\Delta}oaa^{\prime}$, ${\Delta}obb^{\prime}$, ${\Delta}obb^{\prime}$, ${\Delta}oaa_a^{\prime}$, ${\Delta}obb_a^{\prime}$, ${\Delta}ll^{\prime}s^{\prime}$, ${\Delta}ss^{\prime}l^{\prime}$ and ⏢$ll^{\prime}ss^{\prime}$) and (24~25) area difference(${\Delta}obb^{\prime}-{\Delta}oaa^{\prime}$ and ${\Delta}obb_a^{\prime}-{\Delta}oaa_a^{\prime}$). Firstly, the values of the 11 parameters(group I: No. 1, 3~4, 7, 9~10, 13, 15~16, 20 and 25), the 3 parameters(group II: No. 5, 8 and 17) and the 2 parameters(group III: No. 12 and 22) are in orders of H(hardway) < G(grain) < R(rift), R < G < H and G < H < R, respectively. On the contrary, the values of parameters belonging to the above three groups show reverse orders for three planes. Secondly, the generalized chart for three planes and three rock cleavages were made. From the related chart, the distribution types formed by the two diagrams related to lengths and spacings were derived. The diagrams related to spacings show upward curvature in the chart of rift plane(G1 & H1, R') and hardway(H1 & H2, H). On the contrary, the diagrams related to lengths show downward curvature. These two diagrams take the form of a convex lens in the upper section. Besides, the two diagrams cross each other in the lower section. The overall shape formed by the above two diagrams between three planes($H^{\prime}{\rightarrow}G^{\prime}{\rightarrow}R^{\prime}$) and three rock cleavages($R{\rightarrow}G{\rightarrow}H$) display in reverse order. Lastly, these types of correlation analysis is useful for discriminating three quarrying planes.

• The Journal of the Petrological Society of Korea
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• v.7 no.3
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• pp.190-206
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• 1998

The microstructures and time-relationship between deformation and growth of metamorphic minerals(metamorphism) of the Paleozoic metasedimentary rocks(Joseon Supergroup and Pyeongan Group) in the Janggunbong area at the central-south part in the North Sobaegsan Massif, Korea, have been analyzed in this paper. The first phase metamorphism (low-pressure type metamorphism), recognized as the crystallization of stack-type chloritoid and biotite and augen-type old andalusite, occurred under non-deformational condition before D1 deformation related to the formation of an E-W trending isocline-synclinal fold(Janggunbong fold) and associated its axial plane S1 foliation, and produced regional mineralogical zoning of E-W trend in the Paleozoic rocks. The second phase metamorphism(medium-pressure type metamorphism), related to the growth of staurolite and garnet porphyroblasts with straight or curved internal foliations(Si), occurred under non-deformational condition after D1 deformation related to the formation of E-W trending thrusts modifying the Janggunbong fold and during D2 deformation related to the formation of E-W trending Yecheon shear zone. This metamorphism also produced regional mineralogical zoning of E-W trend. After D2 deformation occurred the intrusion of Jurassic Chunyang granite and associated its contact metamorphism which crystallized patchy-type young andalusite and prismatic- or fibrous-type sillimanite and coarse-grained garnet. This metamorphism occurred under non-deformational condition before D3 deformation related to the formation of S3 crenulation cleavage and during early phase of D3 deformation, and formed narrow mineralogical zoning of N-S trend near Chunyang granite.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.251-258
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• 1995

In an effort to increase the thermoelectric figure of merit by reducing the thermal conductivity, the unidirectionally solidified n-type (Bi, Pb)-Te based alloys which form a $Bi_{2}Te_{3}-PbBi_{4}Te_{7}$eutectic lamellar structure were investigated with the microstructural control at various solidification conditions. PbBi_{4}Te_{7}$ lamellae were grown on cleavage plane(0001) of $Bi_{2}Te_{3}$ and the interlamellar spacing decreased from 10.4 $\mu \textrm{m}$to 3.2$\mu \textrm{m}$ with growth velocity variation from 1.4 \times 10^{-4}$cm/sec to $8.3 \times 10^{-4}$cm/sec. Seebeck coefficient was constant, $\mid$$\alpha$$\mid$=29 $\mu$ V/K regardless of growth direction, growth velocity and temperature gradient. Electrical conductivity showed a tendency to decrease slightly with growth velocity and it parallel to growth direction was about three times as large as perpendicular direction. The figures of merit were varied differently from Seebeck coefficients and electrical conductivities depending on the growth direction, growth velocity and temperature gradients. They showed the relative increase in case of perpendicular direction compared with parallel to growth direction. It is believed to be due to the reduction of the thermal conductivity according to decrease of the interlamellar spacing.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.