• 제목/요약/키워드: Cleaning pad

검색결과 23건 처리시간 0.022초

이동식 디스크 드라이브의 입자 오염에 대한 클리닝 패드의 효과 (Effect of Cleaning Pad on Particle Contamination in Removable Media Disk Drive)

  • 유신성;이정규;김대은
    • 한국정밀공학회지
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    • 제20권4호
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    • pp.183-188
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    • 2003
  • Particulate contamination is known to be a significant cause of failures of removable storage media. In this work, the effect of particles on the surface damage of removable hard disk media was investigated. The particles of different materials and size were introduced to the Head Disk Interface (HDI) using a particle injection system. It was round that the particles of particulate size and property serious damaged the media. This study showed that cleaning pad is effective for reducing particle contamination, except fer the particles of specific size and property. As a means to remove the particles of specific sire. the concept of using a stepped taper at the leading edge of the slider is proposed.

CFD를 이용한 CMP장비의 효과적인 공정을 위한 수치해석적 연구 (A Numerical Analysis Using CFD for Effective Process at CMP Equipment)

  • 이수연;김광선
    • 반도체디스플레이기술학회지
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    • 제10권4호
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    • pp.139-144
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    • 2011
  • CMP process is an essential element in the semiconductor product processes in Chemical Mechanical Polishing. Taken as a whole, CMP is one process, but concretely, it is a detail process which consists of polishing, cleaning, and so on. Especially, the polishing and cleaning are key points in the whole process. Polishing rate is the most important factor and is related with deposition of slurry in the polishing process. Each outlet velocities is the most important factors in cleaning process. And when the velocities are more uniform, the cleaning becomes more effective. In this research, based on these factors, we performed a numerical analysis for effective polishing and cleaning which can be applied to industrial field. Consequently, we figured out that more than one opened nozzle is more effective than one opened nozzle at the polishing pad in case of this research. And we confirmed that the revised models have the uniform velocity distribution more than the previous model of the cleaning nozzle.

구리 CMP 후 연마입자 제거에 화학 기계적 세정의 효과 (Effect of Chemical Mechanical Cleaning(CMC) on Particle Removal in Post-Cu CMP Cleaning)

  • 김영민;조한철;정해도
    • 대한기계학회논문집A
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    • 제33권10호
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    • pp.1023-1028
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    • 2009
  • Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

구리 CMP 후 연마입자 제거에 버프 세정의 효과 (Effect of buffing on particle removal in post-Cu CMP cleaning)

  • 김영민;조한철;정해도
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1880-1884
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    • 2008
  • Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

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Ag-Pd 후막도체와 솔더범프 사이의 접합특성 및 계면반응 (Characteristics of Joint Between Ag-Pd Thick Film Conductor and Solder Bump and Interfacial Reaction)

  • 김경섭;한완옥;이종남;양택진
    • 마이크로전자및패키징학회지
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    • 제11권1호
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    • pp.1-6
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    • 2004
  • 자동차 전장품의 시험환경 조건이 엄격해짐에 따라, 전장품 개발 기술자들은 이에 부합하는 성능, 신뢰성, 비용 등을 고려한 보다 효과적인 제품 설계를 위해 노력하고 있다. 본 논문에서는 ECM 알루미나 기판의 플라즈마 세척 영향과 리플로우 후 Sn-37wt%Pb 솔더와 패드 접합부 계면에서 형성되는 금속간 화합물을 관찰하였다. 기판의 플라즈마 세척은 계면 접착력을 저해하였던 C에 의한 유기 잔류물 층이 제거되어 계면 접착력을 향상시키는 효과가 있다. 또한 AFM 분석 결과 도체 패드의 표면 거칠기는 304 nm에서 330 m로 증가하였다. 리플로우 과정에서 솔더와 TiWN/Cu 패드 계면에서 형성된 $Cu_6/Sn_5$는 리플로우 횟수가 증가할 수록 결정립의 크기도 조대화되었다. 솔더와 Ag-Pd 도체패드 계면에서는 세포질 형태의 $Ag_3Sn$화합물이 관찰되었다. $Ag_3Sn$은 지름이 약 0.1∼0.6 $\mu\textrm{m}$이며, 솔더 내부에서는 침상 모양도 관찰되었다.

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패키지 박리 개선을 위한 플라즈마 세정 효과 (Plasma Cleaning Effect for Improvement of Package Delamination)

  • 구경완;김도우;왕진석
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권7호
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    • pp.315-318
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    • 2005
  • The effect of plasma cleaning was examined on package delamination phenomena in the integrated circuit (IC) packaging process. Without plasma cleaning, delamination was observed for all three experimental treatments applied after the packaging step, which include bake of If, reflow, and bake of If followed by reflow However, no delamination was observed when the plasma cleaning was performed before and after the wire bonding step. Plasma cleaning was found to be a critical step to improve the reliability of the package by reducing the possibility of contact failure between die pad and bonding wire.

Novel Bumping Material for Solder-on-Pad Technology

  • Choi, Kwang-Seong;Chu, Sun-Woo;Lee, Jong-Jin;Sung, Ki-Jun;Bae, Hyun-Cheol;Lim, Byeong-Ok;Moon, Jong-Tae;Eom, Yong-Sung
    • ETRI Journal
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    • 제33권4호
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    • pp.637-640
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    • 2011
  • A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder-on-pad technology of the fine-pitch flip-chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 ${\mu}m$ in one direction.

이동식 디스크 드라이브의 입자 오염 저감 방안 (A study on the decrease of particle contamination in removable media disk drive)

  • 유신성;이정규;김대은
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.946-949
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    • 2002
  • Particulate contamination is known to be a significant cause of failures of removable storage media. In this work, The effect of particles on the surface damage of removable hard disk media was investigated. The particles of different materials and size were introduced to the head-disk interface using a particle injection system. It was found that the particles of particulate size and property serious damaged the media. This study showed that cleaning pad is effective for reducing particle contamination, except for the particles of specific size and property. As a means to removed the particles of specific size, the concept of using a stepped taper at the leading edge of the slider is proposed.

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경사진 패널 위에서 주행이 가능한 보행형 태양광 패널 청소로봇 시스템 개발 (Development of a Walking-type Solar Panel Cleaning Robot Capable of Driving on Inclined Solar Panel)

  • 박성관;장우진;김동환
    • 한국인터넷방송통신학회논문지
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    • 제20권5호
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    • pp.79-88
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    • 2020
  • 본 연구에서는 태양광 패널 청소 로봇이 진공 패드 압력을 이용하여 경사진 패널 위를 미끄러짐 없이 효율적으로 주행하는 방법을 제안한다. 이 방법에서는 로봇을 경사로 패널에 고정시키기 위해 로봇 발에 부착된 고무 패드의 압력을 진공으로 만들게 된다. 구동 방식으로 Linkage 매커니즘을 적용하여 미끄러짐을 방지함과 동시에 중량을 감소하여 소모전력을 낮추는 방법을 제안하였다. 로봇의 안전한 구동을 위하여 솔레노이드 밸브, 근접 센서, 엔코더를 사용하여 로봇의 움직임을 감지하며, 주행할 때 고무 패드의 압력을 제어하여 안전한 경사로 주행을 가능하게 하였다. 로봇의 전진 동작을 위하여 다중의 솔레노이드 밸브들의 동작 시퀀스를 완성하여 양쪽 발에 부착된 6개의 진공패드가 진공 및 대기압을 정확하게 형성 할수 있도록 제어하여 이동 중 미끄러짐 없이 전진할 수 있게 하였다. 마지막으로 주행 및 회전 실험을 통해 36도의 태양광 패널에서 직진 및 회전 동작을 수행할 수 있음을 확인하였다.

SAC 305솔더와 ENIG 기판의 접합강도에 미치는 저주파 수소라디칼처리의 영향 (Improvement of Solder Joint Strength in SAC 305 Solder Ball to ENIG Substrate Using LF Hydrogen Radical Treatment)

  • 이아름;조승재;박재현;강정윤
    • Journal of Welding and Joining
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    • 제29권1호
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    • pp.99-106
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    • 2011
  • Joint strength between a solder ball and a pad on a substrate is one of the major factors which have effects on electronic device reliability. The effort to improve solder joint strength via surface cleaning, heat treatment and solder composition change have been in progress. This paper will discuss the method of solder ball joint strength improvement using LF hydrogen radical cleaning treatment and focus on the effects of surface treatment condition on the solder ball shear strength and interfacial reactions. In the joint without radical cleaning, voids were observed at the interface. However, the specimens cleaned by hydrogen-radical didn't have voids at the interface regardless of cleaning time. The shear strength between the solder ball and the pad was increased over 120%(about 800gf) when compared to that without the radical treatment (680gf) under the same reflow condition. Especially, at the specimen treated for 5minutes, ball shear strength was considerably increased over 150%(1150gf). Through the observation of fracture surface and cross-section microstructure, the increase of joint strength resulted from the change of fracture mode, that is, from the solder ball fracture to IMC/Ni(P) interfacial fracture. The other cases like radical treated specimen for 1, 3, 7, 9min. showed IMC/solder interfacial fracture rather than fracture in the solder ball.