• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.619-625
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• 1998

Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin film phosphors were prepared on Si(100) wafers and ITO coated glass substrates by rf magnetron sputtering technique and the effects of the substrates dopant and the sputtering paramet-ers were analyzed, Changes of the oreintation were observed after annealine tratment. The grain size of {{{{ {Zn {Ga }_{2 }O }_{4 } }} : Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate which resulted in higher PL intensity. The PL spectra of Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin films showed sharp green luminescence spec-trum. According to CL spectrum it could be concluded that Mn ions acted as an actuator for green emission by substituting Zn atom sites.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.248-252
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• 2006

An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.112-115
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• 2006

The red emission properties of $Bi^{3+}$ co-doped $Y_2O_3:Eu^{3+}$ prepared by the solid-state reaction was investigated, in order to verify its potential to act as the red emitting phosphor of white LEDs. The emission spectrum consisted of a weak band at 581, 587, 5931 and 599 nm, with maximum sharp peaks occurring at about 611 nm due to the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, while the excitation spectrum exhibited a broad band between 290 and 430 mm with peaks occurring in the range of $310{\sim}390nm$. Also, SEM image of the sample containing 0.43 mol% $H_3BO_3$ and 2.08 mol% $BaCl_2{\cdot}2H_2O$ phosphor particles grew to achieve diameters of $700{\sim}800nm$.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.104-104
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• 2000

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.576-577
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• 2008

ZnS:Cu,Cl blue-green phosphors were prepared by conventional solid state reaction. Copper activator of different concentrations was doped into ZnS structure at two firing steps. The luminescence characteristics dependent on $Cu^{2+}$ doping concentration of the phosphors has been investigated for inorganic electroluminescent device.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.652-656
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• 2003

The green emitting phosphor, BnGa$_2$O$_4$:Mn thin films with spinel structure were deposited by rf magnetron sputtering at various Ar/O$_2$ ratios. Thin film phosphors were heat-treated in air and $N_2$+vacuum atmosphere, respectively. Effects of Ar/O$_2$ ratios and annealing conditions on the structural and photoluminescence (PL) and cathodeluminescence (CL) properties were investigated. Luminous properties were more improved by inhibiting the films from contacting with oxygen during heat treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.105-108
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• 1998

In the present study, the luminescence characteristics and the effect of conductivity on cathodoluminescene of CaTiO$_3$:Pr was studied using dick specimens sintered at various temperatures and atmosphere. As a sintering temperature was increased from 1100 to 1400 $^{\circ}C$, conductivity of CaTiO$_3$:Pr phosphor was improved and CL brightness was also increased about four times and decay times was reduced from 0.29 to 0.21 msec. And all samples prepared in Ar showed high conductivity, CL brightness and short decay time in comparison with those sintered in air.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.343-346
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• 2003

Photoluminescence(PL), photostimulated luminescence(PSL) and thermoluminescence(TL) in $SrC1_2$:$Eu^{2+}$ , $Na^{+}$ phosphor powder were measured, and the activation energies(trap depth) of traps associated with TL and PSL were investigated. The PL and PSL in the studied sample is due to the $4f^{6}$ 5d\longrightarrow$4f^{7}$transition of $Eu^{ 2+}$. TL glow curve is single peak, and its peak temperature is about 377.2 K. The PL, PSL and TL emission spectra of the phosphors are located in the range of 380∼440 nm, peaking at 408 nm. The activation energy of the PSL trapping center is 0.78 eV and that of the TL trapping center is 0.79 eV. We, thus, suggest that the trapping centers giving rise to the PSL are identical to those giving rise to the TL.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.744-748
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• 2006

Emission characteristics of terbium-activated $InBO_3$ under cathode-ray(c.r.) and vacuum ultra violet(v.u.v.) irradiation have been investigated as a functions of norminal compositions and firing conditions. From the x-ray analysis, it was found that some of the synthesized samples contained excess $In_2O_3$ and the amount of the excess $In_2O_3$ varied with the norminal composition and heat treatment conditions. The samples with remanent excess $In_2O_3$ showed lower luminescence intensities than the ones free of excess $In_2O_3$. The phosphors of norminal composition of $InBO_3+10mol%B_2O_3:2mol%Tb$ synthesized at $1250^{\circ}C$ showed excellent CL and PL properties.