• Title/Summary/Keyword: Circuit Parameter

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Fabrication of Cu2SnS3 (CTS) thin Film Solar Cells by Sulfurization of Sputtered Metallic Precursors (스퍼터법을 이용한 메탈 전구체기반의 Cu2SnS3 (CTS) 박막 태양전지 제조 및 특성 평가)

  • Lee, Ju Yeon;Kim, In Young;Minhao, Wu;Moon, Jong Ha;Kim, Jin Hyeok
    • Current Photovoltaic Research
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    • v.3 no.4
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    • pp.135-139
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    • 2015
  • $Cu_2SnS_3$ (CTS) based thin film solar cells (TFSCs) are of great interest because of its earth abundant, low-toxic and eco-friendly material with high optical absorption coefficient of $10^4cm^{-1}$. In this study, the DC sputtered precursor thin films have been sulfurized using rapid thermal annealing (RTA) system in the graphite box under Ar gas atmosphere for 10 minute. The systematic variation of sulfur powder during annealing process has been carried out and their effects on the structural, morphological and optical properties of CTS thin films have been investigated. The preliminary power conversion efficiency of 1.47% with a short circuit current density of $33.9mA/cm^2$, an open circuit voltage of 159.7 mV, and a fill factor of 27% were obtained for CTS thin film annealed with 0.05g of S powder, although the processing parameter s have not yet been optimized.

Implementation of Zero-Ripple Line Current Induction Cooker using Class-D Current-Source Resonant Inverter with Parallel-Load Network Parameters under Large-Signal Excitation

  • Ekkaravarodome, Chainarin;Thounthong, Phatiphat;Jirasereeamornkul, Kamon
    • Journal of Electrical Engineering and Technology
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    • v.13 no.3
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    • pp.1251-1264
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    • 2018
  • The systematic and effective design method of a Class-D current-source resonant inverter for use in an induction cooker with zero-ripple line current is presented. The design procedure is based on the principle of the Class-D current-source resonant inverter with a simplified load network model that is a parallel equivalent circuit. An induction load characterization is obtained from a large-signal excitation test-bench based on parallel load network, which is the key to an accurate design for the induction cooker system. Accordingly, the proposed scheme provides a systematic, precise, and feasible solution than the existing design method based on series-parallel load network under low-signal excitation. Moreover, a zero-ripple condition of utility-line input current is naturally preserved without any extra circuit or control. Meanwhile, a differential-mode input electromagnetic interference (EMI) filter can be eliminated, high power quality in utility-line can be obtained, and a standard-recovery diode of bridge-rectifier can be employed. The step-by-step design procedure explained with design example. The devices stress and power loss analysis of induction cooker with a parallel load network under large-signal excitation are described. A 2,500-W laboratory prototype was developed for $220-V_{rms}/50-Hz$ utility-line to verify the theoretical analysis. An efficiency of the prototype is 96% at full load.

Compact Rectangular Spiral Antenna Employing Modified Feeding Network (변형된 급전 구조를 가지는 소형 직사각형 스파이럴 안테나)

  • Lee Dong-Hyun;Kim Tae-Soo;Chun Joong-Chang
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.595-598
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    • 2006
  • In this letter, a compact rectangular spiral antenna is proposed. Instead of a center excitation of conventional spiral antennas, the proposed antenna is adopted a modified feed network, feeding at the end of the spiral. The matching circuit of $'{\sqsupset}'$ shape is added at the feeding point. With this matching circuit, we can easily match the input impedance well, without the limit of the space. The parameter which determines the circular wave characteristic is explained, and the design guideline of the proposed antenna is presented. We design a proposed antenna operating at 9.5 GHz. Its size is only $0.6\lambda_g\times0.6\lambda_g$. The simulated bandwidth of the input impedance $(S11\leq-10)$ is 8.12% and that of $(AR\leq-3)$ is 4.62%, which is excellent characteristics as compared to its simple structure.

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On a Modified Structure of Planar Multiport Power Divider/Combiner at 2 GHz (평면 다수 입출력 전력 분배/결합회로의 2 GHz에서의 구조 수정 연구)

  • Han, Yong-In;Jo, Chi-Sung;Kim, Ihn-Seok
    • Journal of Advanced Navigation Technology
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    • v.6 no.4
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    • pp.279-290
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    • 2002
  • In this paper, tapered shape of multiport power divider/combiner modified for 2 GHz range from the model published by [10] is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that the modified structure of power divider/combiner have improved return loss more than 20 dB and another 18 dB, respectively, at 2 GHz.

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High Efficiency and High Power-Factor Power Supply for LED Lighting Equipment (고효율 고역률 LED 조명장치용 전원공급장치)

  • Jeong, Gang-Youl
    • The Journal of Korean Institute of Information Technology
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    • v.16 no.11
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    • pp.23-34
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    • 2018
  • This paper presents the high efficiency and high power-factor power supply for LED lighting equipment. The proposed power supply is the single-stage power structure consisted of the full-bridge diode rectifier and flyback converter, and thus the power-factor correction and output voltage regulation are performed simultaneously using only one controller IC and one power semiconductor switch. Furthermore, the proposed power supply reduces the voltage stress and switching loss of main switch using the regenerative snubber, and it improves the system efficiency using the synchronous rectifier. The applied synchronous rectifier is the new voltage-driven type and its operation and construction are simple. In this paper, the operation principle of proposed power supply is explained through the operation analyses of its power-factor correction and main power conversion parts and the operation of synchronous rectifier is described, briefly. Also, a design example of the power circuit of 40W-class prototype is shown and the operation characteristics of proposed power supply are validated through the experimental results of the implemented prototype by the designed circuit parameter.

Gate-Length Dependent Cutoff Frequency Extraction for Nano-Scale MOSFET (Nano-Scale MOSFET의 게이트길이 종속 차단주파수 추출)

  • Kim, Joung-Hyck;Lee, Yong-Taek;Choi, Mun-Sung;Ku, Ja-Nam;Lee, Seong-Heam
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.12
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    • pp.1-8
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    • 2005
  • The gate length-dependence of cutoff frequency is modeled by using scaling parameter equations of equivalent circuit parameters extracted from measured S-parameters of Nano-scale MOSFETs. It is observed that the modeled cutoff frequency initially increases with decreasing gate length and then the rate of increase becomes degraded at further scale-down. This is because the extrinsic charging time slightly decreases, although the intrinsic transit time greatly decreases with gate length reduction. The new gate length-dependent model will be very helpful to optimize RF performances of Nano-scale MOSFETs.

An Analysis of Three Port Ring Resonator for the Balun-BPF Characteristics (Balun-BPF 특성 구현을 위한 3-단자 링-공진기의 해석)

  • Kang, Seong-Jun;Park, Ung-Hee;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.4
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    • pp.436-441
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    • 2008
  • In this paper, we derived the Y-parameter of the recently reported Balun-BPF with a dual mode ring resonator by using the network analysis method. Using the derived Y-parameter we verified that the Balun-BPF structure satisfy the balun conditions. In order to design the Balun-BPF with arbitrary characteristics using the standard BPF design method with ease we derived the immittance slope parameters of the dual mode ring resonator with a load. The notch frequencies are also predicted. By designing with the proposed equations, simulating with a circuit simulator, fabricated and measured a Balun-BPF we confirmed the validation of the equations. The measured data shows bandwidth of 71 MHz and insertion loss of 0.92 dB at the center frequency of 2.46 GHz. It shows the phase imbalance of $174{\sim}181$ degree and the magnitude imbalance within 0.5 dB.

A Study on the Improvement of the Dye-sensitized Solar Cell by the Fiber Laser Transparent Conductive Electrode Scribing Technology (파이버 레이저 투명 전극 식각을 통한 염료감응형 태양전지 효율 상승 연구)

  • Son, Min-Kyu;Seo, Hyun-Woong;Shin, In-Young;Kim, Jin-Kyoung;Choi, Jin-Ho;Choi, Seok-Won;Kim, Hee-Je
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.12
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    • pp.2218-2224
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    • 2010
  • Dye-sensitized solar cell (DSC) is a promising alternative solar cell to the conventional silicon solar cell due to several advantages. Development of large scale module is necessary to commercialize the DSC in the near future. A scribing technology of the transparent conductive oxide (TCO) is one of the important technologies on the fabrication of DSC module. A quality of the scribed line on the TCO has a decisive effect on the efficiency of DSC module. Among several scribing technologies, the fiber laser is a suitable for scribing the TCO more precisely and accurately because of their own characteristics. In this study, we try to improve the quality of the TCO scribed line by using the fiber laser. Consequently, the operating parameter of fiber laser is optimized to get the TCO scribed line with good quality. And the fiber laser scribing technology of the TCO is applied to the fabrication of the DSC with optimal operating parameter, operating current 3900mA. As a result, the current density and fill factor are improved and the total efficiency is increased because the internal resistances of DSC such as TCO sheet resistance and the resistance concerned to the electron movement in the $TiO_2$ are reduced. This is analyzed by the electrochemistry impedance spectroscopy (EIS) and the equivalent circuit model of the DSC.

A Technique of Large Signal Modeling of PIN Diode through Measurements (측정을 통한 PIN 다이오드 대신호 모델 구축 기법)

  • Yang, Seong-Sik;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.1
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    • pp.12-20
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    • 2009
  • In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.

Tunable SIW Using Dielectric Screw for Eliminating the Phase Imbalance of Large Size Substrate Integrated Power Distribution Network (대 면적 기판 집적 PDN의 위상차 문제를 제거하기 위한 유전체 나사를 이용한 가변 기판 집적 도파관)

  • Byun, Jin-Do;Lee, Hai-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.2
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    • pp.110-120
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    • 2010
  • In this paper, we propose a tunable SIW(Substrate Integrated Waveguide) using dielectric screws for eliminating the phase imbalance of large size power distribution networks(PDN). Alumina screws partially inserted into several through holes of the tunable SIW section effectively change the phase shift without S-parameter degradation. ${\pm}33.9^{\circ}$ measured phase imbalance of a large conventional 9 GHz SIW-PDN of $370\;mm{\times}195\;mm$ size has been greatly reduced to ${\pm}4.65^{\circ}$. We expect that the proposed tunable SIW plays an important role for a light-weight, high performance substrate integrated phased array system(Si-PAS) and large size SIW circuit applications.