• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.