• Title/Summary/Keyword: Chip stack height

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Chip stack height measurement of semiconductor using slit beam (슬릿빔을 이용한 반도체의 칩 적층 높이 측정)

  • Shin, Gyun-Seob;Cho, Tai-Hoon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.10a
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    • pp.422-424
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    • 2009
  • In this paper, we studied methods that measure chip stack height using slit beam in mold equipment among semiconductor manufacture equipments. We studied two methods to improve chip stack height measurement performance. First, it is relation of camera exposure time and height measurement repeatability. Second we could improve measurement performance applying method of least mean square method for measurement error minimization about PCB(Printed Circuit Board) flexure phenomenon.

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The Low Height Looping Technology for Multi-chip Package in Wire Bonder (와이어 본더에서의 초저 루프 기술)

  • Kwak, Byung-Kil;Park, Young-Min;Kook, Sung-June
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.1 s.18
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    • pp.17-22
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    • 2007
  • Recent new packages such as MCP(Multi-Chip Package), QDP(Quadratic Die Package) and DDP(Dual Die Package) have stack type configuration. This kind of multi-layer package is thicker than single layer package. So there is need for the low height looping technology in wirebonder to make these packages thinner. There is stiff zone above ball in wirebonder wire which is called HAZ(Heat Affect Zone). When making low height loop (below $80\;{\mu}m$) with traditional forward loop, stiff wire in HAZ(Heat Affected Zone) above ball is bended and weakened. So the traditional forward looping method cannot be applied to low height loop. SSB(stand-off stitch) wire bonding method was applied to many packages which require very low loops. The drawback of SSB method is making frequent errors at making ball, neck damage above ball on lead and the weakness of ball bonding on lead. The alternative looping method is BNL(ball neckless) looping technology which is already applied to some package(DDP, QDP). The advantage of this method is faster in bonding process and making little errors in wire bonding compared with SSB method. This paper presents the result of BNL looping technology applied in assembly house and several issues related to low loop height consistence and BNL zone weakness.

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A Product of Power Chip Inductor for Slim Mobile Communication Set (휴대용 이동 통신기기의 슬림화를 위한 파워 칩 인덕터의 제품화)

  • Uhm, Jae-Hyun;Cho, Il-Jae;Seo, Jong-Go;Kim, Sung-Il;Kim, Du-Il;Park, Jun-Hyung
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.891-892
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    • 2006
  • An obstacle is an element for power to small and slim the existing portable communication set. Developed Inductor for Chip-type electric power in needs to solve this. Stack applied Process, and used gap of a magnetic path, and made a height of an element to 1.0T or below, and this development commodity did product for saturation prevention to materials of silver. Saturation current characteristic of Chip-type inductor was low compare with winding-type inductors, but bulk against performance were had superior excellence. Chip-type inductor can raise performance per unit volume compared with the existing inductors at these papers. Therefore, acceleration can get growth of small and slim of a mobile product done, and expect.

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Interconnection Process and Electrical Properties of the Interconnection Joints for 3D Stack Package with $75{\mu}m$ Cu Via ($75{\mu}m$ Cu via가 형성된 3D 스택 패키지용 interconnection 공정 및 접합부의 전기적 특성)

  • Lee Kwang-Yong;Oh Teck-Su;Won Hye-Jin;Lee Jae-Ho;Oh Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.111-119
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    • 2005
  • Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

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A 6Gbps 1:2 Demultlplexer Design Using Micro Stacked Spiral inductor in CMOS Technology (Micro Stacked Spiral Inductor를 이용한 6Gbps 1:2 Demultiplexer 설계)

  • Choi, Jung-Myung;Burm, Jin-Wook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.58-64
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    • 2008
  • A 6Gbps 1:2 demultiplexer(DEMUX) IC using $0.18{\mu}m$ CMOS was designed and fabricated. For high speed performance current mode logic(CML) flipflop was used and inductive peaking technology was used so as to obtain higher speed than conventional Current mode logic flipflop. On-chip spiral inductor was designed to maximize the inductive peaking effect using stack structure. Total twelve inductors of $100{\mu}m^2$ area increase was used. The measurement was processed on wafer and 1:2 demultiplexer with and without micro stacked spiral inductors were compared. For 6Gbps data rate measurement, eye width was improved 7.27% and Jitter was improved 43% respectively. Power consumption was 76.8mW and eye height was 180mV at 6 Gbps

Advances in Package-on-Package Technology for Logic + Memory Integration

  • Scanlan Christopher
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2005.09a
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    • pp.111-129
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    • 2005
  • Pop provides OEMs and EMS with a platform to cost effectively expand options for logic + memory 3D integration - Expands device options by simplifying business logistics of stacking - Integration controlled at the system level to best match stacked combinations with system requirements - Eliminates margin stacking and expands technology reuse - Helps manage the huge cost impacts associated with increasing demand for multi media processing and memory. PoP is well timed to enable and leverage: - Mass customization of systems for different use (form, fit and function) requirements o Bband and apps processor + memory stack platforms - Logic transition to flip chip enables PoP size reduction o Area and height reduction. Industry standardization is progressing. Amkor provides full turn-key support for base package, memory package and full system integration.

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