• 대한전자공학회논문지SD
• /
• 제43권7호
• /
• pp.38-49
• /
• 2006

본 논문에서는 SoC를 검증 및 테스트하기 위한 새로운 개념의 칩을 제안하고 이를 SwToC(System with Test on a Chip)라 명명한다. SwToC는 SoC의 임베디드 프로세서에 재구성 가능한 로직을 추가하여 칩의 물리적인 결함을 테스트할 수 있을 뿐만 아니라 기존의 기법으로는 수행이 어려웠던 테스트 단계에서의 디자인 검증이 가능하도록 한 칩을 말한다. 제안한 개념의 칩은 고속 검증이 가능하며 테스트를 위해 많은 비용이 소모되는 ATE 가 불필요한 장점을 갖고 있다. 제안한 칩의 디자인 검증 및 테스트 기능을 평가하기 위하여 임베디드 프로세서가 내장된 상용 FPGA를 이용하여 SwToC를 구현하였으며, 구현 결과 제안한 칩의 실현 가능성을 확인하였고 적은 비용의 단말기를 통한 테스트가 가능함은 물론 기존의 검증기법에 비해 고속 검증이 가능함을 확인하였다.

• ETRI Journal
• /
• 제34권5호
• /
• pp.706-712
• /
• 2012

In previous work, novel maskless bumping and no-flow underfill technologies for three-dimensional (3D) integrated circuit (IC) integration were developed. The bumping material, solder bump maker (SBM) composed of resin and solder powder, is designed to form low-volume solder bumps on a through silicon via (TSV) chip for the 3D IC integration through the conventional reflow process. To obtain the optimized volume of solder bumps using the SBM, the effect of the volumetric mixing ratio of resin and solder powder is studied in this paper. A no-flow underfill material named "fluxing underfill" is proposed for a simplified stacking process for the 3D IC integration. It can remove the oxide layer on solder bumps like flux and play a role of an underfill after the stacking process. The bumping process and the stacking process using the SBM and the fluxing underfill, respectively, for the TSV chips are carefully designed so that two-tier stacked TSV chips are sucessfully stacked.

• 한국전자파학회지:전자파기술
• /
• 제24권2호
• /
• pp.51-57
• /
• 2013

The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

• ETRI Journal
• /
• 제41권3호
• /
• pp.396-407
• /
• 2019

Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

• 전기전자학회논문지
• /
• 제1권1호
• /
• pp.1-10
• /
• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
• /
• pp.178-182
• /
• 2003

This paper presents the embedded inductors in PCB (Printed Circuit Board) for PAM(Power Amplifier Module) of mobile terminations. The inductors are designed, simulated, and compared to conventional chip inductors. The Quality factor(Q) and self-resonance frequency(SRF) of the inductors are evaluated. The quality factors of the inductors are two times higher than those of the chip inductors, and the self-resonance frequency is 1.3 times higher than those of chip inductors at the inductance of 2.7 nH and 3.3 nH respectively.

• 전기전자학회논문지
• /
• 제21권3호
• /
• pp.272-275
• /
• 2017

최근 반도체의 집적도가 증가하고 배선 폭이 미세해짐에 따라 칩 수준의 EMI(electromagnetic interference)가 문제로 대두되고 있다. 이에 따라 칩 제조사는 칩 수준의 EMI를 측정하기 위해 TEM 셀(transverse electromagnetic cell)을 사용하고 있다. 이를 위해 측정용 PCB(printed circuit board)를 제작하여야 하지만, PCB의 배선 패턴 등이 EMI 측정에 영향을 미칠 수 있다는 점이 간과되고 있다. 본 논문에서는 PCB 설계 변수를 변화시켜가며 테스트 패턴을 제작한 다음 TEM 셀의 EMI 측정에 미치는 영향을 분석하였다. 또한 이를 바탕으로 EMI 측정에 미치는 영향을 최소화하기 위한 PCB 설계 가이드라인을 제시하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.377-377
• /
• 2007

A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2003년도 International Symposium
• /
• pp.261-278
• /
• 2003

Concepts.Wafer-Level Chip-Scale Concept with Handling Substrate.Low Accuracy Placement Layout with Isolation Trench.Possible Pitch of Interconnections down to $10{\mu}{\textrm}{m}$ (Sn-Grains).Wafer-to-Wafer Equipment Adjustment Accuracy meets this Request of Alignment Accuracy (+/-1.5 ${\mu}{\textrm}{m}$).Adjustment Accuracy of High-Speed Chip-to-Wafer Placement Equipment starts to meet this request.Face-to-Face Modular / SLID with Flipped Device Orientation.interchip Via / SLID with Non-Flipped Orientation SLID Technology Features.Demonstration with Copper / Tin-Alloy (SLID) and W-InterChip Vias (ICV).Combination of reliable processes for advanced concept - Filling of vias with W as standard wafer process sequence.No plug filling on stack level necessary.Simultanious formation of electrical and mechanical connection.No need for underfiller: large area contacts replace underfiller.Cu / Sn SLID layers $\leq$ $10{\mu}{\textrm}{m}$ in total are possible Electrical Results.Measurements of Three Layer Stacks on Daisy Chains with 240 Elements.2.5 Ohms per Chain Element.Contribution of Soldering Metal only in the Range of Milliohms.Soldering Contact Resistance ($0.43\Omega$) dominated by Contact Resistance of Barrier and Seed Layer.Tungsten Pin Contribution in the Range of 1 Ohm

• ETRI Journal
• /
• 제37권1호
• /
• pp.118-127
• /
• 2015

The power consumption of 3D many-core processors can be reduced, and the power delivery of such processors can be improved by introducing voltage island (VI) design using on-chip voltage regulators. With the dramatic growth in the number of cores that are integrated in a processor, however, it is infeasible to adopt per-core VI design. We propose a 3D many-core processor architecture that consists of multiple voltage clusters, where each has a set of cores that share an on-chip voltage regulator. Based on the architecture, the steady state temperature is analyzed so that the thermal characteristic of each voltage cluster is known. In the voltage scaling and task scheduling stages, the thermal characteristics and communication between cores is considered. The consideration of the thermal characteristics enables the proposed VI formation to reduce the total energy consumption, peak temperature, and temperature gradients in 3D many-core processors.