• Title/Summary/Keyword: Chip bonding

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A Study on the Assembly Process and Reliability of COF (Chip-On-Flex) Using ACFs (Anisotropic Conductive Films) for CCM (Compact Camera Module) (ACF를 이용한 CCM (Compact Camera Module)용 COF(Chip-On-Flex) 실장 기술 및 신뢰성 연구)

  • Chung, Chang-Kyu;Paik, Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.2
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    • pp.7-15
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    • 2008
  • In this paper, the Chip-On-Flex (COF) assembly process using anisotropic conductive films (ACFs) was investigated and the reliability of COF assemblies using ACFs was evaluated. Thermo-mechanical properties of ACFs such as coefficient of thermal expansion (CTE), storage modulus (E'), and glass transition temperature $(T_g)$ were measured to investigate the effects of ACF material properties on the reliability of COF assemblies using ACFs. In addition, the bonding conditions for COF assemblies using ACFs such as time, temperature, and pressure were optimized. After the COF assemblies using ACFs were fabricated with optimized bonding conditions, reliability tests were then carried out. According to the reliability test results, COF assemblies using the ACF which had lower CTE and higher $T_g$ showed better thermal cycling reliability. Consequently, thermo-mechanical properties of ACFs, especially $T_g$, should be improved for high thermal cycling reliability of COF assemblies using ACFs for compact camera module (CCM) applications.

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Effect of Desmear Treatment on the Interfacial Bonding Mechanism of Electroless-Plated Cu film on FR-4 Substrate (Desmear 습식 표면 전처리가 무전해 도금된 Cu 박막과 FR-4 기판 사이의 계면 접착 기구에 미치는 영향)

  • Min, Kyoung-Jin;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.625-630
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    • 2009
  • Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

LTCC-based Packaging Method using Au/Sn Eutectic Bonding for RF MEMS Applications (RF MEMS 소자 실장을 위한 LTCC 및 금/주석 공융 접합 기술 기반의 실장 방법)

  • Bang, Yong-Seung;Kim, Jong-Man;Kim, Yong-Sung;Kim, Jung-Mu;Kwon, Ki-Hwan;Moon, Chang-Youl;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.30-32
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    • 2005
  • This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

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Collective laser-assisted bonding process for 3D TSV integration with NCP

  • Braganca, Wagno Alves Junior;Eom, Yong-Sung;Jang, Keon-Soo;Moon, Seok Hwan;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
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    • v.41 no.3
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    • pp.396-407
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    • 2019
  • Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

A New COG Technique Using Solder Bumps for Flat Panel Display

  • Lee, Min-Seok;Kang, Un-Byoung;Kim, Young-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1005-1008
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    • 2003
  • We report a new FCOG (flip chip on glass) technique using solder bumps for display packaging applications. The In and Sn solder bumps of 40 ${\mu}m$ pitches were formed on Si and glass substrate. The In and Sn bumps were bonded at 125 at the pressure of 3 mN/bump. The metallurgical bonding was confirmed using cross-sectional SEM. The contact resistance of the solder joint was 65 $m{\Omega}$ which was much lower than that of the joint made using the conventional ACF bonding technique. We demonstrate that the new COG technique using solder bump to bump direct bonding can be applied to advanced LCDs that lead to require higher quality, better resolution, and lower power consumption.

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Thermal Fatigue Analysis of Wafer Level Embedded SiP by Changing Mold Compounds and Chip Sizes (몰드물성 종류 및 칩 크기 변화에 따른 웨이퍼 레벨 Sip에서의 열 피로 해석)

  • Jang, Chong Min;Kim, Seong Keol
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.3_1spc
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    • pp.504-508
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    • 2013
  • This paper describes in detail the life prediction models and simulations of thermal fatigue under different mold compounds and chip sizes for wafer-level embedded SiP. Three-dimensional finite element models are built to simulate the viscoplastic behaviors for various mold compounds and chip sizes. In particular, the bonding parts between a mold and silicon nitride (Si3N4) are carefully modeled, and the strain distributions are studied. Three different chip sizes are used, and the effects of the mold compounds are observed. Through the numerical studies, it is found that type-C, which has a relatively lower Young's modulus and higher CTE, has a better fatigue life than the other mold compounds. In addition, the $4{\times}4$ chip has a shorter life than the $6{\times}6$ and $8{\times}8$ chips.