• Title/Summary/Keyword: Chip Resistor

Search Result 97, Processing Time 0.023 seconds

A Study on Design of the Miniaturized Inverted-F Antenna Using Lumped Elements for Z-wave (집중소자를 이용한 Z-wave용 역 F형 안테나 소형화에 관한 연구)

  • Kwak, Min-Gil;Kim, Dong-Seek;Won, Young-Soo;Cho, Hyung-Rae
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.33 no.8
    • /
    • pp.1239-1245
    • /
    • 2009
  • Currently, so many approaching methods are being developed to optimize the antenna size. In this paper, We fabricated Inverted-F type antenna attaching lumped components to solve the limitation of antenna size. Through experiments, a basic Inverted-F type antenna was fabricated and satisfied the adequate radiation pattern. After this, we researched the effect of antenna varied by matching circuit consist of chip type resistor, inductor, and capacitor. Using that elements, the antenna was matched at aim frequency. The proposed antenna's size is $7\;{\times}\;24\;mm$ that is very small size against the resonance frequence. Measuring the developed antenna, Its return loss was -18dB. Thus, this antenna can be used for Z-wave systems.

Broadband Mixer with built-in Active Balun for Dual-band WLAN Applications (이중대역 무선랜용 능동발룬 내장 광대역 믹서 설계)

  • Lee, Kang-Ho;Koo, Kyung-Heon
    • Proceedings of the IEEK Conference
    • /
    • 2005.11a
    • /
    • pp.261-264
    • /
    • 2005
  • This paper presents the design of a down-conversion mixer with built-in active balun integrated in a $0.25\;{\mu}m$ pHEMT process. The active balun consists of series-connected common-gate FET and common-source FET. The designed balun achieved broadband characteristics by optimizing gate-width and bias condition for the reduction in parasitic effect. From DC to more than 6GHz, the active balun shows the phase error of less than 3 degree and the gain error of less than 0.4 dB. A single-balanced down-conversion mixer with built-in broadband active balun has been designed with optimum width, load resistor and bias for conversion gain and without any matching component for broadband operating. The designed mixer whose size of including on-chip bias circuit is $1\;mm{\times}1\;mm$ shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz and $P_{1dB}$ of -10 dBm at 5.8 GHz

  • PDF

High Performance Wilkinson Power Divider Using Integrated Passive Technology on SI-GaAs Substrate

  • Wang, Cong;Qian, Cheng;Li, De-Zhong;Huang, Wen-Cheng;Kim, Nam-Young
    • Journal of electromagnetic engineering and science
    • /
    • v.8 no.3
    • /
    • pp.129-133
    • /
    • 2008
  • An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

Package Optimization for Maximizing the Modulation Performance of 10 Gbps MQW Modulator (10 Gbps용 MQW 광변조기의 변조 성능 극대화를 위한 최적 패키지에 관한 연구)

  • 김병남;이해영
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.10
    • /
    • pp.91-97
    • /
    • 1998
  • The modulation performance of 10 Gbps electro-absorption InGaAsP/InGaAsP strain compensated MQW (Multiple Quantum Well) modulator module depends on the modulator as well as the package parasitics. The high frequency package parasitics resulting from various structural discontinuities, limit the modulation bandwidth and increase the chirp-parameter. Therefore, we propose the double bondwires embedded in dielectric materials to minimize the bondwire parasitics. Using the proposed structure with 50 $\Omega$ terminating resistor, the modulation bandwidth is greatly increased by 125 % than the bare chip and the chirp-parameter is also reduced. This technique can be used in optimizing the package of high speed external modulators.

  • PDF

A development of Diagnosis Monitoring System for UPS DC Link Capacitors using Zigbee Wireless Communication (Zigbee 무선통신을 이용한 UPS DC링크 커패시터의 고장 모니터링 시스템 개발)

  • Kim, Dong-Jun;Shon, Jin-Geun;Jeon, Hee-Jong
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.61 no.1
    • /
    • pp.41-46
    • /
    • 2012
  • Electrolytic power capacitors have been widely used in power conversion system such as inverter or UPS because of characteristics of large capacitance, high-voltage and low-cost. The electrolytic capacitor, which is most of the time affected by the aging effect, plays a very important role for the power-electronics system quality and reliability. Therefore it is important to diagnosis monitoring the condition of an electrolytic capacitor in real-time to predict the failure. In this paper, the on-line remote diagnosis monitoring system for UPS DC link electrolytic capacitors using low-cost single-chip zigbee communication modules is developed. To estimate the health status of the capacitor, the equivalent series resistor(ESR) of the component has to be determined. The capacitor ESR is estimated by using RMS computation using BPF modeling of DC link ripple voltage/current. Zigbee-based hardware experimental results show that the proposed remote capacitor diagnosis monitoring system can be applied to UPS successfully.

Optimal Characteristics of a Long-pulse $CO_2$Laser by Controlling SCR Firing Angle in AC Power Line

  • Noh, Ki-Kyung;Kim, Geun-Yong;Chung, Hyun-Ju;Min, Byoung-Dae;Song, Keun-Ju;Kim, Hee-Je
    • KIEE International Transactions on Electrophysics and Applications
    • /
    • v.2C no.6
    • /
    • pp.304-308
    • /
    • 2002
  • We demonstrate a simple pulsed $CO_2$ laser with millisecond long pulse duration in a tube at a low pressure of less than 30 Torr. The novel power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply doesn't need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. To control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of SCR(Silicon Controlled Rectifier) gate is varied from 30。 to 150。. A ZCS (Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control precisely the gate signal of the SCR. The maximum laser output of 35 W is obtained at a total pressure of 18 Torr, a pulse repetition rate of 60 Hz, and a SCR gate firing angle of 90。 . In addition, the resulting laser pulse width is approximately 3㎳(FWHM). This is a relatively long pulse width, compared with other repetitively pulsed $CO_2$ lasers.

The Design of Continuous-Time MOSFET-C Filter (연속시간의 MOSFET-C 필터 설계)

  • 최석우;윤창훈;조성익;조해풍;이종인;김동용
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.18 no.2
    • /
    • pp.184-191
    • /
    • 1993
  • Continuous-time integrated filters, implemented in MOS VLSI technology, have been receiving considerable attention. In this paper, a continuous-time fifth order elliptic low-pass MOSFET-C filter has been designed with a cutoff frequency 3,400Hz. First an active RC filter is designed using cascade method which each block can be tunable. And then the resistors of an active RC network are replaced by a linear resistor using NMOS depletion transistors operated in the triode region. This continuous-time MOSFET filter have simpler structure than switched-capacitor filter, so reduce the chip area. The designed MOSFET-C filter characteristics are simulated by PSPICE program.

  • PDF

A Hybrid Audio ${\Delta}{\Sigma}$ Modulator with dB-Linear Gain Control Function

  • Kim, Yi-Gyeong;Cho, Min-Hyung;Kim, Bong-Chan;Kwon, Jong-Kee
    • ETRI Journal
    • /
    • v.33 no.6
    • /
    • pp.897-903
    • /
    • 2011
  • A hybrid ${\Delta}{\Sigma}$ modulator for audio applications is presented in this paper. The pulse generator for digital-to-analog converter alleviates the requirement of the external clock jitter and calibrates the coefficient variation due to a process shift and temperature changes. The input resistor network in the first integrator offers a gain control function in a dB-linear fashion. Also, careful chopper stabilization implementation using return-to-zero scheme in the first continuous-time integrator minimizes both the influence of flicker noise and inflow noise due to chopping. The chip is implemented in a 0.13 ${\mu}m$ CMOS technology (I/O devices) and occupies an active area of 0.37 $mm^2$. The ${\Delta}{\Sigma}$ modulator achieves a dynamic range (A-weighted) of 97.8 dB and a peak signal-to-noise-plus-distortion ratio of 90.0 dB over an audio bandwidth of 20 kHz with a 4.4 mW power consumption from 3.3 V. Also, the gain of the modulator is controlled from -9.5 dB to 8.5 dB, and the performance of the modulator is maintained up to 5 nsRMS external clock jitter.

A 3.3V 8-bit 500MSPS Nyquist CMOS A/D Converter Based on an Interpolation Architecture (Interpolation 기법을 이용한 3.3V 8-bit 500MSPS Nyquist CMOS A/D Converter의 설계)

  • 김상규;송민규
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.41 no.8
    • /
    • pp.67-74
    • /
    • 2004
  • In this paper, a 3.3V 8-bit 500MSPS based on an interpolation architecture CMOS A/D converter is designed. In order to overcome the problems of high speed operation, a novel pre-amplifier, a circuit for the Reference Fluctuation, and an Averaging Resistor are proposed. The proposed Interpolation A/D Converter consists of Track & Hold, four resistive ladders with 256 taps, 128 comparators, and digital blocks. The proposed A/D Converter is based on 0.35um 2-poly 4-metal N-well CMOS technology. The A/D Converter dissipates 440 mW at a 3.3 Volt single power supply and occupies a chip area of 2250um x 3080um.

A study on the adjusting output energy of the CO2 laser controlled directly in AC power line (상용전원을 제어하는 CO2레이저의 출력 조절에 관한 연구)

  • Jeong, Jong-Jin;Lee, Im-Geun;Choi, Jin-Young;Park, Sung-Jin;Song, Gun-Ju;Kim, Hee-Je
    • Proceedings of the KIEE Conference
    • /
    • 2005.07c
    • /
    • pp.2138-2139
    • /
    • 2005
  • We demonstrate a simple CO2 laser by controlling firing angle of a TRIAC switch in ac power line. The power supply for our laser system switches the voltage of the AC power line (60Hz) directly. The power supply does not need elements such as a rectifier bridge, energy-storage capacitors, or a current-limiting resistor in the discharge circuit. In order to control the laser output power, the pulse repetition rate is adjusted up to 60Hz and the firing angle of TRIAC gate is varied from 45 to 135. A ZCS(Zero Crossing Switch) circuit and a PIC one-chip microprocessor are used to control the gate signal of the TRIAC precisely. The maximum laser output of 40W is obtained at a total pressure of 18Torr, a pulse repetition rate of 60Hz, and a TRAIC gate firing angle of 90.

  • PDF