• Title/Summary/Keyword: Chip Packing

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A study on the process optimization of injection molding for replicability enhancement of micro channel (미세채널 전사성 향상을 위한 사출성형 공정최적화 기초연구)

  • Go, Young-Bae;Kim, Jong-Sun;Yu, Jae-Won;Min, In-Gi;Kim, Jong-Duck;Yoon, Kyung-Hwan;Hwang, Cheul-Jin
    • Design & Manufacturing
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    • v.2 no.1
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    • pp.45-50
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    • 2008
  • Micro channel is to fabricate desired pattern on the polymer substrate by pressing the patterned mold against the substrate which is heated above the glass transition temperature, and it is a high throughput fabrication method for bio chip, optical microstructure, etc. due to the simultaneous large area patterning. However, the bad pattern fidelity in large area patterning is one of the obstacles to applying the hot embossing technology for mass production. In the present study, stamper of cross channel with width $100{\mu}m$ and height $50{\mu}m$ was manufactured using UV-LiGA process. Micro channel was manufactured using stamper manufactured in this study. Also replicability appliance was evaluated for micro channel and factors affected replicability were investigated using Taguchi method.

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Simultaneous Biofiltration of H2S, NH3 and Toluene using an Inorganic/Polymeric Composite Carrier

  • Park, Byoung-Gi;Shin, Won-Sik;Chung, Jong-Shik
    • Environmental Engineering Research
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    • v.13 no.1
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    • pp.19-27
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    • 2008
  • Simultaneous removal of ternary gases of $NH_3$, $H_2S$ and toluene in a contaminated air stream was investigated over 180 days in a biofilter. A commercially available inorganic/polymeric composite chip with a large void volume (bed porosity > 0.80) was used as a microbial support. Multiple microorganisms including Nitrosomonas and Nitrobactor for nitrogen removal, Thiobacillus thioparus (ATCC 23645) for $H_2S$ removal and Pseudomonas aeruginosa (ATCC 15692), Pseudomonas putida (ATCC 17484) and Pseudomonas putida (ATCC 23973) for toluene removal were used simultaneously. The empty bed residence time (EBRT) ranged from 60 - 120 seconds and the inlet feed concentration was $0.0325\;g/m^3-0.0651\;g/m^3$ for $NH_3$, $0.0636\;g/m^3-0.141\;g/m^3$ for $H_2S$, and $0.0918\;g/m^3-0.383\;g/m^3$ for toluene, respectively. The observed removal efficiency was 2% - 98% for $NH_3$, 2% - 100% for $H^2S$, and 2% - 80% for toluene, respectively. Maximum elimination capacity was about $2.7\;g/m^3$/hr for $NH_3$, > $6.4\;g/m^3$/hr for $H_2S$ and $4.0\;g/m^3$/hr for toluene, respectively. The inorganic/polymeric composite carrier required 40 - 80 days of wetting time for biofilm formation due to the hydrophobic nature of the carrier. Once the surface of the carrier was completely wetted, the microbial activity became stable. During the long-term operation, pressure drop was negligible because the void volume of the carrier was two times higher than the conventional packing materials.

Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching Process of Low-K Methylsilsequioxane Insulator Film using $CF_4$ and $O_2$ ($CF_4$$O_2$를 이용한 저유전율 물질인 Methylsilsequioxane의 RIE와 MERIE 공정)

  • Jung, Do-Hyun;Lee, Yong-Soo;Lee, Kil-Hun;Kim, Kwang-Hun;Lee, Hee-Woo;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1491-1493
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    • 2000
  • Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.

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