• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.98.2-98.2
• /
• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• 펄프종이기술
• /
• 제45권3호
• /
• pp.59-68
• /
• 2013

The cotton contains various impurities such as protein, wax, pectins, coloring matter, even though cotton has been a major source of pure cellulose. The purification processes have been commonly applied to obtain the pure cellulose. However the excessive purification treatments could lead to the damage in the cellulose structure which could result in the degradation of cellulose and the limited application of cotton cellulose. In this study, the changes in cellulose structural properties such as crystallinity and DP(degree of polymerization) by the various conditions of the purification processes were investigated. The less toxic agents such as hydrogen peroxide and sodium silicate were applied for the purification treatment in this study. The increase in the process times, the temperature and the applied amount of chemical agents resulted in the more purified cellulose. The DP of cotton cellulose was increased at the first weak conditions by the reduction of small molecules such as pectin, wax, and so on. Especially the 2 % addition amount of $H_2O_2$ with $Na_2SiO_3$ resulted in the higher value in the DP and the brightness compared to the 1.5 % addition amount of $H_2O_2$. However, the 4 % addition amount of $H_2O_2$ with $Na_2SiO_3$ showed the decreased value because of excessive treatment. In case of the changes in the crystallinity (Gjk), the highest value of the crystallinity was obtained by the 2% addition amount of $H_2O_2$ on the cotton cellulose, which showed similar with the change in the DP.

• 멤브레인
• /
• 제24권2호
• /
• pp.88-99
• /
• 2014

인구의 증가와 산업의 발전으로 물에 대한 수요가 점차 증가하고 있는 상황에서 안전하고 지속가능한 수자원을 확보하기 위한 방법으로 분리막을 이용한 수처리가 널리 사용되고 있다. 수처리장에서 가장 널리 사용되고 있는 분리막 중 하나인 폴리아마이드 분리막은 분리막 공정 전 단계에서 수행되는 염소살균 처리 후에 잔류하는 염소에 의해 화학적/구조적으로 영향을 받고 성능이 변화하는 것으로 알려져 있다. 본 논문에서는 pH에 따라 수중에 용해되는 염소의 종변화 및 염소에 노출시 폴리아마이드 분리막의 표면 성질 변화와 성능변화의 원리를 다루었다.

• 한국전기전자재료학회논문지
• /
• 제27권6호
• /
• pp.394-398
• /
• 2014

We fabricated the electrolyte-dielectric-metal (EDM) sensor on the base of AAO (anodic aluminum oxide) template with variation of the anodizing temperature. When a surface is immersed or created in an aqueous solution, a discontinuity is formed at the interface where such physicochemical variables as electrical potential and electrolyte concentration change significantly from the aqueous phase to another phase. Because of the different chemical potentials between the two phases, charge separation often occurs at the interfacial region [1]. This interfacial region, togeter with the charged surface, is usually known as the electrical double layer (EDL) [2]. The structural and electrochemical properties of AAO sensor were investigated for applications in capacitive pH sensors. To change the thickness of the AAO template, the anodizing temperature was varied from $5^{\circ}C$ to $20^{\circ}C$, the thickness of the AAO template invreased from 300 nm to 477 nm. The pH sensitivity of sensors with the anodizing temperature of $20^{\circ}C$ showed the highest value of 56.4 mV/pH in the pH range of 3 to 11. The EDM sensor with the anodizing temperature of $20^{\circ}C$ exhibited the best long-term stability of 0.037 mV/h.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
• /
• pp.15-17
• /
• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.40-40
• /
• 2010

Structural, electrical, and optical properties of atomic layer-controlled AI-doped ZnO (ZnO:Al) films grown on glass by atomic layer deposition (ALD) were characterized with various $Al_2O_3$ film contents for use as transparent electrodes. Unlike films made using sputtering methods, the diffraction peak position of the films grown by ALD based on alternate self-limiting surface chemical reactions moved progressively to a wider angle (red shift) with increasing $Al_2O_3$ film content, which seems to be evidence of Zn substitution in the film by layer-by-layer growth. By adjusting the $Al_2O_3$ film content, the electrical resistivity of ZnO:Al film with the $Al_2O_3$ film content of 2.96% reached the lowest electrical resistivity of $9.80{\times}10^{-4}\Omega{\cdot}cm$, in which the carrier mobility, carrier concentration, and optical transmittance were $11.20\;cm^2V^{-1}s^{-1}$, $5.69{\times}10^{20}\;cm^{-3}$, and 94.23%, respectively. Moreover, the estimated figure of merit value for the transparent conductive oxide applications from our best sample was $7.7\;m{\Omega}^{-1}$.

• 한국전기전자재료학회논문지
• /
• 제29권11호
• /
• pp.702-706
• /
• 2016

We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were $8{\times}10^8cm^{-2}$ and $7{\times}10^7cm^{-2}$, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.

• 한국전기전자재료학회논문지
• /
• 제30권12호
• /
• pp.762-767
• /
• 2017

Mullite ($3Al_2O_3{\cdot}2SiO_2$) has emerged as a promising candidate for high-temperature structural materials due to its erosion resistance, chemical and thermal stabilities, relatively low thermal expansion coefficient, excellent thermal shock and creep resistances, and low dielectric constant. However, since the pure mullite sintering temperature is as high as $1,600{\sim}1,700^{\circ}C$, there is an increasing need for a sintering additive capable of improving the strength characteristics while lowering the sintering temperature. Herein we have tried to obtain the optimal sintering additive composition by adding MgO, $Cr_2O_3$, and $Y_2O_3$ to mullite, followed by sintering at $1,325{\sim}1,550^{\circ}C$ for 2 h. With additives of 2 wt% of MgO, 2 wt% of $Cr_2O_3$, 4 wt% of $Y_2O_3$, A density of $3.23g/cm^3$ was obtained for the sintered body at $1,350^{\circ}C$ upon using 2 wt% MgO, 2 wt% $Cr_2O_3$, and 4 wt% $Y_2O_3$ as additives. The three-point flexural strength of that was 275 MPa and the coefficient of thermal expansion (CTE) was $4.15ppm/^{\circ}C$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.175-175
• /
• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• 한국수소및신에너지학회논문집
• /
• 제30권6호
• /
• pp.531-539
• /
• 2019

The development of cost-effective electrocatalysts with high durability is one of the most important challenges for the commercialization of polymer electrolyte fuel cells (PEFCs). The durability of the electrocatalyst has been studied in terms of structural change in the active metal and the support. In particular, in fuel cell vehicles, degradation of the carbon-based support is known to have a significant effect on the electrocatalyst deterioration since the start-up/shut-down cycle is frequently repeated. The requirements for the support of the electrocatalyst include high surface area, electrical conductivity, chemical stability, and so on. In this study, we propose the evaluation methods for choosing better support materials and present the physicochemical properties that promising carbon supports should have. Three kinds of carbon materials with different crystallinity are compared. From in-depth study using X-ray diffraction, Raman spectroscopy, thermogravimetric analysis, and accelerated stress test, it is clearly confirmed that the durability of carbon-supported electrocatalysts is closely related to the physicochemical properties of the carbon supports.