• Title/Summary/Keyword: Chemical-structural properties

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Optical and structural properties of metal-dielectric near-infrared cutoff filters for plasma display panel application

  • Lee, Jang-Hoon;Lee, Kwang-Su;Hwangbo, Chang-Kwon
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.88-91
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    • 2003
  • Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

Structural and Electrical Properties of $CuInSe_2$ Ternary Compound Thin Film ($CuInSe_2$ 3원 화합물 박막의 전기적 구조적 특성)

  • Kim, Young-Jun;Yang, Hyeon-Hun;Park, Joung-Yun;Jeong, Woon-Jo;Park, Gye-Choon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.258-259
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    • 2005
  • [ $CuInSe_2$ ] thin films were fabricated at various fabrication conditions (substrate temperature, sputtering pressure, BC/RF power, vapor deposition, heat treatment). And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInSe_2$ thin films with stoichiometric composition. $CuInSe_2$ thin film was well made at the heat treatment of 500[$^{\circ}C$] of SLG/Cu/In/Se stacked elemental layer which was prepared by sputter and thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $1.27\sim9.88\times10^{17}[cm^{-3}]$, $49.95\sim185[cm^2/V{\cdot}s]$ and $10^{-1}\sim10^{-2}[\Omega{\cdot}cm]$, respectively

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AEM on Growth Mechanism of Synthesized Graphene on Ni Catalyst

  • Park, Min-Ho;Lee, Jae-Uk;Bae, Ji-Hwan;Song, Gwan-U;Kim, Tae-Hun;Yang, Cheol-Ung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.579-579
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    • 2012
  • Graphene has recently been a subject of much interest as a potential platform for future nanodevices such as flexible thin-film transistors, touch panels, and solar cells. And chemical vapor deposition (CVD) and related surface segregation techniques are a potentially scalable approach to synthesizing graphite films on a variety of metal substrates. The structural properties of such films have been studied by a number of methods, including Raman scattering, x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). An understanding of the structural quality and thickness of the graphite films is of paramount importance both in improving growth procedures and understanding the resulting films' electronic properties. In this study, we synthesized the few-layered grapheneunder optimized condition to figure out the growth mechanism seen in CVD-grown graphenee by using various electron microscope. Especially, we observed directly film thickness, quality, nucleation site, and uniformity of grpahene by using AEM. The details will be discussed in my presentation.

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Effect of Rapid Thermal Annealing and Orientation of Si Substrate on Structural and Electrical Properties of MOCVD-grown TiO2 Thin Films (급속 후 열처리 및 실리콘기판 배향에 따른 MOCVD-TiO2박막의 구조적.전기적 특성)

  • 왕채현;최두진
    • Journal of the Korean Ceramic Society
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    • v.35 no.1
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    • pp.88-96
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    • 1998
  • The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

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Dependence of the Structural and Electrical Properties of Co-Sputtered Zn-Doped ITO Thin Films on the Composition and Oxygen Partial Pressure

  • Heo, Gi-Seok;Kim, EunMi
    • Journal of the Korean Ceramic Society
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    • v.50 no.4
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    • pp.288-293
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    • 2013
  • Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.

Improving the Reliability of the National Database for Chemical Hazard Information (국가 화학물질 유해성정보 데이터베이스 구축 과정의 신뢰도 제고 방안에 관한 연구)

  • Lee, Somin;Lee, Minhyeok;Kang, Mijin;Kwon, Soon-Kwang;Ra, Jin-Sung;Park, Beaksoo
    • Journal of Environmental Health Sciences
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    • v.46 no.4
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    • pp.410-422
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    • 2020
  • Objectives: According to the Act on Registration, Evaluation, Etc. of Chemicals, new and existing chemicals must be registered by 2030. In addition, industries need to submit hazard data as an attachment during the registration process. Therefore, we constructed a nationwide chemical database to support small industry by providing hazard data and original sources. During the process, we developed a new standard procedure for minimizing errors and increasing reliability. Methods: We analyzed the categories of errors and the cause of the errors through the verification results of the 2019 project. We present an improved database construction methodology and system. Results: Errors are categorized according to their causative factors into simple, technical, and structural type errors. Simple errors arise simply because of decreased concentration or negligence in following the instructions. Technical errors are caused by a discrepancy between the professional field and the type of data. Structural errors indicate systemic errors such as incomplete forms on the excel database or ambiguity in the guidelines. Lessons from the errors collected in the 2019 project are used to update the procedures for database authorization and technical guidelines. The main update points are as follows; 'supplementation of review process', 'giving regular training to external reviewers', 'giving additional information to authors, like physico-chemical properties of substances, degradability, etc.', 'amendment of excel form', and 'guideline upgrades'. Conclusions: We conducted this study with the aim of improving the accuracy and reliability of the database of hazard information for chemical substances. The new procedures and guidelines are now being used in the 2020 project for construction of a hazard information database for Korea.

Investigation of Changes in Structural Characteristics and Chemical Composition after Heat Treatment Process of JIS-SUJ2 Bearing Steel (JIS-SUJ2 베어링강의 열처리 이후 표면 및 심부에서 나타나는 구조적, 화학적 물성 변화)

  • Donghee Lee;Kyun Taek Cho;Hyeonmin Yim;Seung-Hwan Oh;Tae Bum Kim;Woo-Byoung Kim
    • Korean Journal of Materials Research
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    • v.33 no.12
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    • pp.558-564
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    • 2023
  • In this study, we designed and manufactured a large angular contact ball bearing (LACBB) with low deformation using JIS-SUJ2 steel and analyzed changes in its structural characteristics and chemical composition upon heat treatment. The bearing was produced by hot forging and heat treatment including a quenching and tempering (Q/T) process, and its properties were analyzed using 4 mm thick specimens. A difference in the size distribution of the carbide in the outer and inner parts of the bearing was observed and it was confirmed that large and non-uniform carbide was distributed in the inner part of the bearing. After heat treatment, the hardness value of the outer part increased from 13.4 HRC to 61 HRC and the inner part increased from 8.0 HRC to 59.7 HRC. As a result of X-ray diffraction (XRD) measurements, the volume fraction of the retained austenite contained in the outer part was calculated to be 3.5~4.8 % and the inner part was calculated to be 3.6~5.0 %. The surface chemical composition and the content of chemical bonds were quantified through X-ray photoelectron spectroscopy (XPS), and a decrease in C=C bonds and an increase in Fe-C bonds were confirmed.

Development of Low-activation Cement for Decreasing the Activated Waste in Nuclear Power Plant (원전 방사화 폐기물 저감을 위한 저방사화 시멘트의 개발)

  • Lee, Binna;Lee, Jong-Suk;Min, Jiyoung;Lee, Jang-Hwa
    • Journal of the Korean Recycled Construction Resources Institute
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    • v.5 no.3
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    • pp.223-229
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    • 2017
  • When concrete is exposed to neutron rays for a long time, the concrete tends to become activated. If activated, it is classified as middle or low level radioactive waste. However, the great amount of the activated concrete is hard to dispose. In this study, low-activation cement was developed for decreasing the activated waste from shielding concrete around nuclear reactor. Furthermore, the manufactured low-activation was analyzed with activation nuclide Eu, Co. The low-activation cement showed great advantage for low-activation with detecting none of Eu and 3.75ppm of Co while ordinary portland cement showed 0.4~0.9ppm of Eu, 5.5~19.8ppm of Co content. As the results of physical properties of the low-activation cement, it is similar to type 1 ordinary portland cement and accords with type 4 low heat portland cement. Meanwhile, as for the chemical properties of the cement, it accords wite type 1 and 4 at the same time.

Impact of wilting and additives on fermentation quality and carbohydrate composition of mulberry silage

  • Zhang, Ying Chao;Wang, Xue Kai;Li, Dong Xia;Lin, Yan Li;Yang, Fu Yu;Ni, Kui Kui
    • Asian-Australasian Journal of Animal Sciences
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    • v.33 no.2
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    • pp.254-263
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    • 2020
  • Objective: The objective of this study was to investigate the effects of wilting and additives on the fermentation quality, structural and non-structural carbohydrate composition of mulberry silages. Methods: The selected lactic acid bacteria strains Lactobacillus plantarum 'LC279063' (L1), commercial inoculant Gaofuji (GF), and Trichoderma viride cellulase (CE) were used as additives for silage preparation. Silage treatments were designed as control (CK), L1, GF, or CE under three wilting rates, that is wilting for 0, 2, or 4 hours (h). After ensiling for 30 days, the silages were analyzed for the chemical and fermentation characteristics. Results: The results showed that wilting had superior effects on increasing the non-structural carbohydrate concentration and degrading the structural carbohydrate. After ensiling for 30 days, L1 generally had a higher fermentation quality than other treatments, indicated by the lower pH value, acetic acid, propionic acid and ammonia nitrogen (NH3-N) content, and the higher lactic acid, water soluble carbohydrate, glucose, galactose, sucrose, and cellobiose concentration (p<0.05) at any wilting rate. Wilting could increase the ratio of lactic acid/acetic acid and decrease the content of NH3-N. Conclusion: The results confirmed that wilting degraded the structural carbohydrate and increased the non-structural carbohydrate; and L1 exhibited better properties in improving fermentation quality and maintaining a high non-structural carbohydrates composition compared with the other treatments.

Microstructure and Magnetic Properties of Til-xCoxO2 Diluted Magnetic Semiconductor Thin Films with Various Co Concentrations by Metal Organic Chemical Vapor Deposition (유기 금속 화학 기상 증착법으로 제조된 자성반도체 Til-xCoxO2 박막의 Co 조성 변화에 따른 미세구조 및 자기적 특성)

  • Seong, Nak-Jin;Oh, Young-Nam;Cho, Chae-Ryong;Yoon, Soon-Gil
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.737-741
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    • 2003
  • Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.