• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2003년도 international symposium on advanced powder metallurgy
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• pp.105-105
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.22.1-22
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• 2002

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.70.1-70
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.93-93
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• 2003

Tungsten and tungsten heavy alloys have widespread application as radiation shielding devices and heavy duty electrical contacts. High density and good room temperature mechanical properties have generated interest in evaluating tungsten and tungsten alloys as kinetic energy penetrators against armor. Nowdays ultra fine-grained tungsten powders are in great interest because higly dense structures can be obtained at low temperature, pressure and lower sintering time. Several physical md chemical methods are available for the synthesis of nanometric metal Powders: ball milling, laser abalation, vapor condensation, chemical precipitation, metallic wire explosion i.e. However production rates of the above mentioned methods are low and further efforts are needed to find out large-scale synthesis methods. From this point of view solid state combustion method ( known as SHS) represents undoubted interest.

• 한국분말재료학회지
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• 제13권5호
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• pp.305-312
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• 2006

Amorphous carbon nanotubes were synthesized by a reaction of benzene, ferrocene and Na mixture in a small autoclave at temperatures as low as $400^{\circ}C$. The resulting carbon nanotubes were short and straight, but their inner hole was filled with residual products. The addition of quartz to the reacting mixture considerably promoted the formation of carbon nanotubes. A careful examination of powder structure suggested that the nanotubes in this process were mainly formed by surface diffusion of carbon atoms at the surface of solid catalytic particles, not by VLS(vapor-liquid-solid) mechanism.

• Applied Microscopy
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• 제47권1호
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• pp.13-18
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• 2017

High-quality graphene was synthesized on Cu foil and $Fe_2O_3$ film using $CH_4$ gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on $Fe_2O_3$ at a temperature as low as $700^{\circ}C$. Few-layer graphene was formed within a few seconds and 1 min on Cu and $Fe_2O_3$, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.

• 한국재료학회지
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• 제19권10호
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

• 한국분말재료학회지
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• 제11권6호
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• pp.515-521
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• 2004

Fe(C) nanocapsules were prepared by the chemical vapor condensation(CVC) process using the pyrolysis of iron pentacarbonyl $(Fe(CO)_5)$. Their characterizations were studied by means of X-ray diffraction, X-ray photoelectron spectrometer and transmission electron microscopy. The long-chained Fe(C) nanocapsules hav-ing the mean size of under 70 nm could be obtained below $1100^{\circ}C$ in different gas flow rates. The particle size of the powders was increased with increasing decomposition temperature, but it was decreased with increasing CO gas flow rate. The Fe powders produced at $500^{\circ}C$ consisted of three layers of ${\alpha}$-Fe/$Fe_3C$/amorphous phases, but it had two phase core-shell structure which consited of $Fe_3C$ phase of core and graphite of shell at $1100^{\circ}C$.

• Carbon letters
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• 제13권4호
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.351-351
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• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.