• Title/Summary/Keyword: Chemical vapor synthesis

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Contact resistance of mos2 field effect transistor based on large area film grown using chemical vapor deposition compares to depend on 3-type electrodes

  • Kim, Sang-Jeong;Kim, Seong-Hyeon;Park, Seong-Jin;Park, Myeong-Uk;Yu, Gyeong-Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.277.1-277.1
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    • 2016

  • We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

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Hydrogen Storage by Carbon Fibers Synthesized by Pyrolysis of Cotton Fibers

  • Sharon, Maheshwar;Sharon, Madhuri;Kalita, Golap;Mukherjee, Bholanath
    • Carbon letters
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    • v.12 no.1
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    • pp.39-43
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    • 2011

  • Synthesis of carbon fibers from cotton fiber by pyrolysis process has been described. Synthesis parameters are optimized using Taguchi optimization technique. Synthesized carbon fibers are used for studying hydrogen adsorption capacity using Seivert's apparatus. Transmission electron microscopy analysis and X-ray diffraction of carbon fiber from cotton suggested it to be very transparent type material possessing graphitic nature. Carbon synthesized from cotton fibers under the conditions predicted by Taguchi optimization methodology (no treatment of cotton fiber prior to pyrolysis, temperature of pyrolysis $800^{\circ}C$, Argon as carrier gas and paralyzing time for 2 h) exhibited 7.32 wt% hydrogen adsorption capacity.

  • https://doi.org/10.5714/CL.2011.12.1.039 인용 PDF KSCI

Synthesis of GaN nanowires using thermal chemical vapor deposition (열화학기상증착법을 이용한 GaN nanowire 합성)

  • 류승철;이태재;이철진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.931-934
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    • 2001

  • GaN nanowires has much interest as one-dimensional materials for blue light LED. GaN-based materials have been the subject of intensive research for blue light emission and high temperature/high power electronic devices. In this letter, the synthesis of GaN nanowires by the reaction of mixture of GaN nanowires by the reaction of mixture of Ga meta and GaN powder with NH$_3$ using thermal chemical vapor deposition is reported. X-ray diffraction, energy dispersive x-ray spectrometer, scanning electron microscopy, and transmission electron microscopy indicate that those GaN nanowires with hexagonal wurtzite structure were about 60nm in diameter and up to several hundreds of micrometers in length.

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