• Title/Summary/Keyword: Chemical transport reaction

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Pyrolysis Characteristics of Sawdust and Rice Husk (톱밥과 왕겨의 열분해 특성 연구)

  • Park, Dong Kyoo;Seo, Myung Won;Goo, Jeong Hoi;Kim, Sang Done;Lee, See Hoon;Lee, Jae Goo;Song, Byung-Ho
    • Applied Chemistry for Engineering
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    • v.18 no.5
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    • pp.415-423
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    • 2007
  • Pyrolysis characteristics of sawdust and rice husk as biomass resources in a thermogravimetric analysis were determined. Experiments were carried out with a linear heating rate under inert atmosphere of $N_2$ gas. Pyrolysis of the biomass can be classified as a lower temperature reaction zone where the major component of holocellulose is thermally decomposed and a high temperature reaction zone where lignin is thermally decomposed. The obtained data was analyzed by the two-step consecutive reaction model. Activation energies of sawdust and rice husk are found to be respectively 82.5 kJ/mol and 85.1kJ/mol in the low temperature zone according to the first order reaction model and 19.7 kJ/mol, 22.0 kJ/mol in the high temperature zone according to the three-way transport model. The reaction rate constant with variation of heating rate can be well predicted by the kinetic compensation relation of Gaur-Reed.

Numerical Analysis of Integrated Fuel Processing System Considering Thermo-Chemical Energy Balance (열/화학적 에너지 평형을 고려한 통합 연료 개질 시스템의 수치적 연구)

  • Noh, Junghun;Jung, Hye-Mi;Jung, Un-Ho;Yoon, Wang-Lai;Um, Sukkee
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.111.1-111.1
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    • 2010
  • This paper focuses on a systematic configuration of steam reforming fuel processor, particularly designed for small and medium sized hydrogen production application. In a typical integration of the fuel processor, there exist significant temperature gradients over the entire system which has negative effect on both catalyst life-time and system performance. Also, the volumetric inefficiency should be avoided to obtain the possible compactness for the commercial purpose. In the present work, the computational analysis will be performed to gain the fundamental insight on the transport phenomena and chemical reactions in the reformer consisting of preheating, steam reforming (SR), and water gas shift (WGS) reaction beds in the flow direction. Also, the fuel processing system includes a top-fired burner providing necessary thermal energy for endothermic catalytic reactor. A fully two-dimensional numerical modeling for a integrated fuel processing system is introduced for in-depth analysis of the heat and mass transport phenomena based on surface kinetics and catalytic process. In the model, water gas shift reaction and decomposition reaction were assumed to be at equilibrium. A kinetic model was developed and then computational results were compared with the experimental data available in the literature. Finally, the case study was done by considering the key parameters, i.e. steam to carbon (S/C) ratio and temperature. The computer-aided models developed in this study can be greatly utilized for the design of advanced fast-paced compact fuel processors research.

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Analysis of Facilitied Transport through Fixed Site Carrier Membranes

  • Kang, Yong-Soo;Hong, Jae-Min;Kim, Un-Young
    • Proceedings of the Membrane Society of Korea Conference
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    • 1995.09a
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    • pp.57-71
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    • 1995
  • A simple mathematical model for gacilitated mass transport with a fixed site carrier membrane was derived by assuming an instantaneous, microscopic concentration (activity) fluctuation, The concentration fluctuation, developed due to reversible chemical reaction between carrier and solute, could acuse the higher chemical potential gradient and the facilitated transport. For mathematical formulation, an analogy was employed between the mass transfer for the facilitated transport with fixed site carrier membrane and the electron transfer in a parallel resistor-capacitor (RC) circuit. For the single RC model, it was assumed that a single capacitor represented the total carrier and a solute could not inter-diffuse between matrix and carrier, allowing only two diffusional pathways, This assumption was relaxed by adopting a serial combination of the parallel RC circuit. Here, a solute diffuses in two elements (matrix or carrier) can exchange its pathway, exhibiting four diffusional pathways. The current models were examined against experimental data and the agreement was exceptional.

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A Review on the Photochemical Oxidant Modeling as Applied to Air Quality Studies in Complex Terrain

  • Hwa-Woon Lee;Yoo
    • Journal of Environmental Science International
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    • v.1 no.1
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    • pp.19-33
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    • 1992
  • The high oxidants, which occur the daily maximum concentrations in the afternoon, are transported into the other region via long range transport mechanisms or trapped within the shallow mixing boundary layer and then removed physically (deposition, transport by mountain wind, etc.) and chemically (reaction with local sources). Therefore, modeling formation of photochemical oxidants requires a complex description of both chemical and meteorolog ital processecs . In this study, as a part of air quality studies, we reviewed various aspects of photochemical modeling on the basis of currently available literature. The result of the review shows that the model is based on a set of coupled continuity equations describing advection, diffusion, transport, deposition, chemistry, emission. Also photochemical oxidant models require a large amount of input data concerned with all aspects of the ozone life cycle. First, emission inventories of hydrocarbon and nitrogen oxides, with appropriate spatial and temporal resolution. Second, chemical and photochemical data allowing the quantitative description of the formation of ozone and other photochemically-generated secondary pollutants. Third, dry deposition mechanisms particularly for ozone, PAN and hydrogen peroxide to account for their removal by absorption on the ground, crops, natural vegetation, man-made and water surfaces. Finally, meteorological data describing the transport of primary pollutants away from their sources and of secondary pollutants towards the sensitive receptors where environmental damage may occur. In order to improve our present study, shortcomings and limitation of existing models are pointed out and verification Process through observation is emphasized.

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Application of the STEM II to air pollutant transport/chemistry/ deposition in the Korea and Eastern China Area (STEM II를 이용한 한국과 중국동부 지역의 대기오염물질 이동/화학/침착 모사에 관한 연구)

  • 이상인;조석연;심상규
    • Journal of Korean Society for Atmospheric Environment
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    • v.11 no.2
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    • pp.163-170
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    • 1995
  • The STEM II(Sulfur Transport Eulerian Model II) was adapted to investigate air pollutant transport phenomena between Eastern China and Korea. The movement of the high concentration region was clearly identified for the sulfate but was mot visible for SO$_{2}$. The 10.sim. 16 times more amount of SO$_{2}$ is transported to Korea compared to that of the local emission while the amount of the sulfate transported to Korea is 1 .sim. 1.3 times more than that of the sulfate produced by photo-chemical reaction in Korea. APTIs(Air Pollutant Transport Indices) for SO$_{2}$ and sulfate are approximately 0.85, which implies that the most of the SO$_{2}$ and sulfate existed in Korea are transported from Eastern China.

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A Study on the Surface Modification of Graphite by CVD SiC -Growth Characteristics of SiC in a Horizontal CVD Reactor- (화학증착 탄화규소에 의한 흑연의 표면개질 연구 -수평형 화학증착반응관에서 탄화규소 성장특성-)

  • 김동주;최두진;김영욱;박상환
    • Journal of the Korean Ceramic Society
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    • v.32 no.4
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    • pp.419-428
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    • 1995
  • Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

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Optical Properties of SnS2 Single Crystals

  • Lee Choong-Il
    • Korean Journal of Materials Research
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    • v.15 no.3
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    • pp.195-201
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    • 2005
  • The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

Co 불순물을 첨가한 HgGa2S2 단결정의 광흡수 특성

  • Kim, N.O.;Kim, H.G.;Kim, B.C.;Min, W.K.;Jeon, H.S.;Shin, S.D.;Bang, T.W.
    • Proceedings of the KIEE Conference
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    • 2004.07e
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    • pp.55-57
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    • 2004
  • $HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

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Synthesis and Permeability of Cationic Polycarbonate-Polyurethane (양이온성 폴리카보네이트-폴리우레탄의 합성과 분리특성)

  • Lee, Snag-Woo;Oh, Boo-Keun;Lee, Young-Moo;Noh, Si Tae;Kim, Kea-Yong
    • Applied Chemistry for Engineering
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    • v.1 no.1
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    • pp.52-62
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    • 1990
  • Cationic polycarbonate type polyurethane was prepared from the quaternization reaction of N-methyldiethanolamine(MDEA) in urethane backbone which was obtained from the reaction of polycarbonate polyol, MDI and MDEA(chain exetender). Tensile strength and modulus of the cationic urethane resins were increased sharply with increasing the ionic content in urethane backbone. But hydrolysis resistance was decreased with increasing ionic contents. The selectivity of the cationic polycabonate urethane membrane for water/ethanol separation by pervaporation was about 20. The carrier mediated transport mechanism was considered the most probable separation mechanism for these membranes.

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A Study on the Optical Properties of HgGa2S4 Single Crystal (HgGa2S4 단결정의 광학적 특성연구)

  • 이관교;이상열;강종욱;이봉주;김형곤;현승철;방태환
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.969-974
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    • 2003
  • HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.